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RBS/C, XRR, and XRD Studies of Damage Buildup in Er‐Implanted ZnO
摘要： Accumulation and transformation of defects formed in bulk ZnO crystals at room temperature upon 300 keV Er ions bombardment have been thoroughly examined using complementary techniques: Rutherford Backscattering Spectrometry in ion Channeling mode (RBS/C), X-Ray Reflectivity (XRR), and X-Ray Diffraction (XRD). Evaluation of RBS/C spectra has been performed using Monte Carlo (MC) simulations (McChasy software). Two defect types have been indicated: point defects (randomly displaced atoms, RDA) and extended ones (edge dislocations, DIS). Depth-distributions of RDA and DIS turned out to be shifted toward deeper regions of ZnO crystals (relative to Er-ions range) while DIS are localized even deeper than RDA. The MC simulations reveal three regions of defects accumulation separated by two regions of rapid defects transformation occurring at a certain critical Er fluence. Strain, suggested to be a driving force of defect transformation, has been determined using simulations of the XRD profiles based on the dynamical theory of X-ray diffraction (MROX software). The presented research can help to better understand the interaction between impurity Er ions and ZnO target atoms during the implantation process. Hence, implantation conditions, for example, for luminescence purpose may now be more efficiently chosen based on the results discussed.
关键词： Monte Carlo simulations,defects analysis,X-ray reflectivity,ion channeling,dynamical theory of X-ray diffraction
更新于2025-09-23 15:19:57
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Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling
摘要： At moderately elevated temperatures, radiation defects in SiC exhibit pronounced dynamic annealing, which remains poorly understood. Here, we study 3C-SiC bombarded at 100°C with pulsed beams of 500 keV Ar ions. Radiation damage is monitored by a combination of X-ray diffraction, Raman scattering, and ion channeling. Similar damage buildup behavior but with different defect relaxation time constants, ranging from ～1 to ～6 ms, is observed for the different types of lattice defects probed by these techniques. A correlation between relaxation times and the nature of the defects is proposed. These results reveal additional complexity of radiation defect dynamics in SiC and demonstrate that results of different defect characterization techniques are needed for a better understanding of dynamic annealing processes in solids.
关键词： X-ray diffraction,Ion channeling,Raman scattering,Dynamic annealing,Radiation defects,3C-SiC
更新于2025-09-23 15:19:57