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Optogenetic?Stimulation of the Anterior Cingulate Cortex Ameliorates Autistic-Like Behaviors in Rats Induced by Neonatal Isolation, Caudate Putamen as a Site for Alteration
摘要： Epigenetic agents, such as neonatal isolation during neurodevelopmental period of life, can change various regions of the brain. It may further induce psychological disorders such as autistic-like phenomena. This study indicated the role of chronic increased anterior cingulate cortex (ACC) output on alteration of caudate putamen (CPu) as a main behavior regulator region of the brain in adult maternal deprived (MD) rats. For making an animal model, neonates were isolated from their mothers in postnatal days (PND 1–10, 3 h/day). Subsequently, they bilaterally received pLenti-CaMKIIa-hChR2 (H134R)-mCherry-WPRE virus in ACC area via stereotaxic surgery in PND50. After 22 days, these regions were exposed to blue laser (473 nm) for six consecutive days (15 min/day). Then, behavioral deficits were tested and were compared with control group in the following day. Animals were immediately killed and their brains were prepared for tissue processing. Results showed that neonatal isolation induces autistic-like behaviors and leads to overexpression of NMDAR1 and Nox2-gp91phox proteins and elevation of catalase activity in the CPu regions of the adult offspring compared with control group. Chronic optogenetic stimulation of ACC neurons containing (ChR2+) led to significant reduction in the appearance of stereotypical behavior and alien-phobia in MD rats. The amount of NMDAR1 and Nox2-gp91phox expression and the catalase activity in CPu were reduced after this treatment. Therefore, autistic-like behavior seems to be related with elevation of NMDAR1 and Nox2-gp91phox protein levels that enhance the effect of glutamatergic projection on CPu regions. Optogenetic treatment also could ameliorate behavioral deficits by modulating these protein densities.
关键词： Caudate putamen,Anterior cingulate cortex,Neonatal isolation,Autistic-like behavior,Optogenetic treatment,NMDA receptor
更新于2025-11-25 10:30:42
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Photolysis of PCl <sub/>3</sub> /POCl <sub/>3</sub> with Oxygen Dopant Using 193?nm ArF Excimer at Low Temperatures: Oxygen Insertion through ‘Phosphadioxirane’ Pathway
摘要： Photolysis was performed on PCl3 and POCl3 in the presence of oxygen dopant in Ar matrix at low temperatures using 193 nm ArF excimer laser. The photo irradiation initially facilitated the formation of ozone in situ in the low temperature matrix. For PCl3 + O2 photolysis with 193 nm ArF excimer, initially POCl3 was produced and subsequent oxygen atom insertion on POCl3 generated PO2Cl3. Furthermore, secondary reaction channel opens up in PCl3 + O2 photolysis to form a variety of photoproducts such as POCl, PIIIO2Cl, PVO2Cl and PO3Cl. The insertion of oxygen atom on POCl through phosphadioxirane intermediate generated PIIIO2Cl and the direct oxygen atom addition resulted in PVO2Cl. A successive oxygen insertion on PVO2Cl triggered the PO3Cl generation. The identification of all the photoproducts was confirmed through 18O2 isotopic experiments and quantum chemical computations performed using density functional theory (DFT). Computations carried out at B3LYP level of theory with 6–311 + + G(d,p) basis set were used to correlate the structure of photo products obtained experimentally. Interestingly, photo irradiation of POCl3 with oxygen dopant in Ar matrix @193 nm ArF excimer resulted in the generation of PO2Cl3, PO3Cl3 and PO4Cl3 photo products by a sequential insertion of oxygen atoms through phosphadioxirane intermediate. A compelling evidence for the passage of the reaction through phosphadioxirane intermediate is established through 18O2 isotopic substitution experiments.
关键词： DFT computations,matrix isolation,infrared spectroscopy,photolysis,phosphadioxirane intermediate
更新于2025-09-23 15:23:52
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Proof-of-principle demonstration of vertical-gravity-gradient measurement using a single-proof-mass double-loop atom interferometer
摘要： We demonstrate a proof-of-principle of direct Earth gravity-gradient measurement with an atom interferometer-based gravity gradiometer using a single proof mass of cold 87Rb atoms. The atomic gradiometer is implemented in the so-called double-loop configuration, hence providing a direct gravity-gradient dependent phase shift insensitive to dc acceleration and constant rotation rate. The atom interferometer (AI) can be either operated as a gravimeter or a gradiometer by simply adding an extra Raman π pulse. We demonstrate gravity-gradient measurements first using a vibration isolation platform and second without seismic isolation using the correlation between the AI signal and the vibration signal measured by an auxiliary classical accelerometer allowing one to bypass the absence of common-mode vibration noise rejection in a double-loop geometry. The simplicity of the experimental setup (a single atomic source and unique detection) and the immunity of the AI to rotation-induced contrast loss make it a possible candidate for onboard gravity-gradient measurements.
关键词： gradiometer,gravity gradient,vibration isolation,atom interferometer,correlation technique
更新于2025-09-23 15:23:52
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Contactless parametric characterization of bandgap engineering in p-type FinFETs using spectral photon emission
摘要： In the last decade it has become increasingly popular to use germanium enriched silicon in modern field effect transistors (FET) due to the higher intrinsic mobility of both holes and electrons in SiGe as compared to Si. Whether used in the source/drain region (S/D) as compressive stressor, which is an efficient mobility booster on Si channel devices, or as channel material, the SiGe increases channel carrier mobility and thus enhancing device performance. Because the germanium content modifies the effective bandgap energy EG, this material characteristic is an important technology performance parameter. The bandgap energy can be determined in an LED-like operation of electronic devices, requiring forward biased p-n junctions. P-n junctions in FETs are source or drain to body diodes, usually grounded or reversely biased. This investigation applies a bias to the body that can trigger parasitic forward operation of the source/drain to body p-n junction in any FET. Spectral photon emission (SPE) is used here as a non-destructive method to characterize engineered bandgaps in operative transistor devices, while the device remains fully functional. Before applying the presented technique to a p-type FinFET device, it is put to the proof by verifying the nominal silicon bandgap on an (unstrained) 120 nm technology FET. Subsequently the characterization capability for bandgap engineering is then successfully demonstrated on a SiGe:C heterojunction bipolar transistor (HBT). In a final step, the bandgap energy EG of a 14/16 nm p-type FinFET was determined to be 0.84 eV, which corresponds to a Si0.7Ge0.3 mixture. The presented characterization technique is a contactless fault isolation method that allows for quantitative local investigation of engineered bandgaps in p-type FinFETs.
关键词： p-n junction,Heterojunction bipolar transistor,Bandgap characterization,p-channel FinFET,SiGe, strained Si,Body diode, parasitic operation,Bandgap engineering,Body bias voltage,HBT,Contactless fault isolation,Spectral photon emission,MOSFET
更新于2025-09-23 15:23:52
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Single-Phase Transformer based HF-Isolated Z- Source Inverters with Voltage Clamping Techniques for Solar PV Applications
摘要： In this research article, a new family of impedance source inverters is presented. It employs high frequency electrical isolation between the inverter bridge switches and the load along with voltage clamping across the DC-link voltage. Conventional Z-source inverters (ZSIs) employs an impedance network that consists of inductors and capacitors. It has unique features which realize both step-up/step-down functions and eliminates the need of dead/overlap times. This paper extends this novel concept by using electrical isolation in impedance source inverters. High frequency isolation has many advantages in terms of immunity and reliability; when applied with impedance source inverters this makes ZSIs a preferable choice for industrial applications. In PV systems, the addition of the high frequency transformer provides safety by avoiding the injection of DC circulating current into the grid, without the need of an external bulky line frequency transformer. The gain of the proposed inverter design can be accurately selected by choosing the turns ratio of the HFT or by adjusting the shoot-through duty cycle (STDC) to the inverter. This allows for greater freedom especially when utilizing a higher modulation index, with the STDC allowing dynamic gain adjusts to be done speedily during operation of the inverter. Additionally, a DC-rail voltage clamping technique for the proposed class of isolated ZSIs is also discussed. This technique provides benefits not only in improving the output voltage quality, but also in reducing voltage stress of the active and passive components by minimizing the voltage spikes across the switching devices. In this paper, several high frequency isolated ZSIs are presented, and an example isolated improved ΓZSI design is shown and discussed in detail. Simulations are provided for the proposed class of isolated inverters to verify their working. Further experimental investigation has been done for which results for the isolated improved ΓZSI are reported. These empirical results have largely confirmed the expected benefits that were determined through simulation and accurate model-based testing.
关键词： Single stage power conversion,Higher voltage gain,Impedance source,frequency isolation,High frequency transformers
更新于2025-09-23 15:23:52
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[IEEE 2018 International Conference on Advances in Computing, Communications and Informatics (ICACCI) - Bangalore, India (2018.9.19-2018.9.22)] 2018 International Conference on Advances in Computing, Communications and Informatics (ICACCI) - High Performance Dual Circularly Polarized Microstrip Patch Antenna for Satellite Communication
摘要： High performance dual circularly polarized X-band microstrip patch antenna for satellite communication is presented in this paper. The high performance refers to high return loss, high isolation, high gain >8.5dBi and low cross polarization with axial ratio<2dB throughout the bandwidth 8–8.4GHz. This performance is achieved by using stacked substrate with square patch on the top layer and a 90? hybrid coupler on the bottom layer. The patch is electromagnetically coupled through the two apertures present on the ground plane which is fed by the branchline coupler present on the bottom substrate. Simulated and measured results shows that this basic element can be extended to form a phased array antenna due to its less weight,compact structure and high performance.
关键词： dual circular polarization,broadband antenna,low cross polarization,high isolation,Aperture coupled antenna
更新于2025-09-23 15:23:52
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Void fraction measurement using imaging and phase isolation method in horizontal annular flow
摘要： A new imaging method was proposed to measure the void fraction of annular flow based on phase isolation technology in horizontal circular tube. As gas liquid mixture passes through the phase isolation device, which is arranged upstream, a strong swirl flow is created, due to centrifugal effect. Liquid phase is pushed to the tube wall and forms a uniform liquid film, while the gas phase is concentrated to the tube center and forms a gas core. This rectified core-annular flow has more smooth and clear phase interface than that of natural annular flow, which makes the accurate measurement of some inherent flow parameters of gas-liquid two phase flow become available and much easier. The backlight collimated illumination and high resolution CCD camera were employed to capture the gas core and liquid film. A calibration experiment was conducted to acquire accurate edge detection criterion for recognition of phase interface. The image morphological characteristics of core-annular flow and the beam path diagram of imaging procedure were analyzed in detail and the corresponding image processing algorithm was developed. The working fluid were air and water and the range of void fraction covered in experiment were 0.736-0.978(Usg=4.35m/s-39.12m/s, Usl=0.016m/s-0.504m/s). For each experiment condition, about 800 raw images were processed to obtain average result. Comparisons to a representative mode of void fraction of natural annular flow showed that the void fraction of the core-annular flow rectified by the phase isolation device keeps consistent well with that of natural annular flow in the range of low gas volume fraction, but becomes a little lower than the later as gas volume fraction become very high.
关键词： void fraction,annular flow,imaging,core-annular flow,phase isolation
更新于2025-09-23 15:23:52
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[IEEE 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Chengdu, China (2018.5.7-2018.5.11)] 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - A Low-Profile Dual-Polarized MIMO Antenna Array with High Isolation
摘要： A low-profile dual-polarized MIMO antenna array with high isolation is proposed in this paper. As is shown in this paper, the unit of the presented MIMO antenna array is two crossed dipole antennas. The height of the dipole antenna is just 10mm. It is a low profile because of the application of the AMC surface. As a result, the proposed MIMO antenna array can offer an impedance band from 2.50 GHz to 2.68 GHz when the VSWR is lower than 1.5. At the same time, The MIMO antenna array also presents great performance in radiation patterns, with the gain of 9dBi and the isolation between the two ports can reach 25dB. The proposed MIMO antenna array can be applied to the base stations.
关键词： Dual-polarized,Low-profile,High isolation,MIMO antenna array
更新于2025-09-23 15:22:29
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Ion-Implant Isolated Vertical GaN p-n Diodes Fabricated with Epitaxial Lift-Off From GaN Substrates
摘要： Ion-implant isolated vertical GaN p-n junction diodes fabricated with epitaxial lift-off (ELO) from GaN substrates are demonstrated. For the ELO process, a band-gap selective photoelectrochemical (PEC) wet etch with a pseudomorphic InGaN release layer is utilized. Compared with devices isolated using mesa etching, the ion-implant isolated devices exhibit more ideal forward current–voltage characteristics and lower leakage currents. Devices are also compared with and without ELO processing. Devices measured after ELO processing and mounting to metallized carrier substrates show similar electrical performance to GaN-on-GaN control samples without ELO processing. No indication of material quality degradation is found on the ELO devices. The ELO devices exhibit turn-on voltages of 3.15 V (at a current density of 100 A cm?2), with specific on resistance (Ron) of 0.52 mΩ cm2 at 4.8 V and breakdown voltage (Vbr) approximately of 750 V.
关键词： ion-implant isolation,epitaxial lift-off,GaN p-n junctions,p-GaN ohmic contact
更新于2025-09-23 15:22:29
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Infrared Spectra of the HAnX and H <sub/>2</sub> AnX <sub/>2</sub> Molecules (An=Th and U, X=Cl and Br) in Argon Matrices Supported by Electronic Structure Calculations
摘要： Uranium and thorium hydrides are known as functional groups for ligand stabilized complexes and as isolated molecules under matrix isolation conditions. Here, the new molecular products of the reactions of laser-ablated U and Th atoms with HCl and with HBr, namely HUCl, HUBr and HThCl, HThBr, based on their mid and far infrared spectra in solid argon, are reported. The assignment of these species is based on the close agreement between observed and calculated vibrational frequencies. The H–U and U–35Cl stretching modes of HUCl were observed at 1404.6 and 323.8 cm?1, respectively. Using DCl instead to form DUCl gives absorption bands at 1003.1 and 314.7 cm?1. The corresponding bands of HThCl are 1483.8 (H–Th) and 1058.0 (D–Th), as well as 340.3 and 335.8 cm?1 (Th–35Cl), respectively. HUBr is observed at 1410.6 cm?1 and the BP86 computed shift from HUCl is 6.2 cm?1 in excellent agreement. The U–H stretching frequency increases from 1383.1 (HUF), 1404.6 (HUCl), 1410.6 (HUBr) to 1423.6 cm?1 (UH) as less electronic charge is removed from the U–H bond by the less electronegative substituent. These U–H stretching frequencies follow the Mayer bond orders calculated for the three HUX molecules. A similar trend is found for the Th counterparts. Additional absorptions are assigned to the H2AnX2 molecules (An = U, Th, X = Cl, Br) formed by the exothermic reaction of a second HX molecule with the above primary products.
关键词： infrared,matrix isolation,thorium,uranium,density functional calculations
更新于2025-09-23 15:22:29