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[IEEE 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Erlagol (Altai Republic), Russia (2018.6.29-2018.7.3)] 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - An Interface Model of the Interconnection Between Integrated Circuit Chip Die and Printed Circuit Board
摘要： This work represents results obtained during research of high frequency IC packaging. The interface between IC die and PCB is described and its inner structure is developed: contact pads on IC die, bondwires and chip outputs. As an example of method developed the interface effects into device development and characteristics are shown for the LNA module as a part of the GPS receiver test chip.
关键词： LNA,Low noise amplifier,GPS,CMOS,chip packaging,Noise Figure
更新于2025-09-19 17:15:36
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Nonlinear and Permanent Degradation of GaAs-Based Low-Noise Amplifier Under Electromagnetic Pulse Injection
摘要： Electromagnetic pulse (EMP)-induced nonlinear degradation of an L-band gallium arsenide-based low-noise amplifier (LNA) is studied by an injection experiment, failure analysis, and mixed-mode simulation. The experimental results indicate that the real-time response, radio frequency, and direct current characteristic of LNA samples under an EMP show nonlinear and permanent degradation features. In detail, the characteristics first degrade and then recover slightly as the injection power increases. In addition, the nonlinear degradation shows a close dependence on the pulse properties. Failure analysis reveals that the degradation of the LNA is attributed to latent failure defects under and around the gate metal strip of the first-stage high electron mobility transistor, with recovery well interpreted by an EMP-induced 'annealing effect.' Simulation results show that if the pulse repetition frequency is smaller than 2.5 kHz, a pulse repetition-induced thermal accumulation effect will not occur and that the pulsewidth τ will mainly determine the actual action duration and the temperature of the 'annealing effect.' Based on the above mechanism, the dependence of the pulse properties on nonlinear degradation is well explained.
关键词： nonlinear,low-noise amplifier (LNA),mechanism,electromagnetic pulse (EMP),Degradation
更新于2025-09-19 17:15:36
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Cryogenic Characterization of RF Low-Noise Amplifiers Utilizing Inverse-Mode SiGe HBTs for Extreme Environment Applications
摘要： The cryogenic performance of radiation-hardened radio-frequency (RF) low-noise amplifiers (LNAs) is presented. The LNA, which was originally proposed for the mitigation of single-event transients (SETs) in a radiation environment, uses inverse-mode silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in its core cascode stages. In this prototype, the upper common-base SiGe HBT is configured in inverse mode for balanced RF performance and reduced SET sensitivity. In order to better exploit the inverse-mode LNAs in a variety of extreme-environment applications, the RF performance of the LNA was characterized using liquid nitrogen to evaluate cryogenic operation down to 78 K. While the SiGe LNA exhibits acceptable RF performance for all temperature conditions, there is a noticeable gain drop observed at 78 K compared to the conventional forward-mode design. This is attributed to the limited high-frequency performance of an inverse-mode SiGe HBT. As a guideline, compensation techniques including layout modifications and profile optimization are discussed for the mitigation of the observed gain degradation.
关键词： low-noise amplifier (LNA),heterojunction bipolar transistor (HBT),cascode,inverse mode,extreme environment,cryogenic measurement,silicon-germanium (SiGe)
更新于2025-09-11 14:15:04
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Design of a MMIC low-noise amplifier in industrial gallium arsenide technology for E-band 5G transceivers
摘要： The technology, design procedure and measurements of an E-band (71-86 GHz) high performance gallium arsenide (GaAs) low-noise amplifier (LNA) are presented. The latter provides a gain in excess of 20 dB, an average in-band noise figure (NF) of 2.3 dB, absorbing 60 mW DC bias power. A European space-qualified technology (OMMIC’s GaAs 70 nm process) has been selected to demonstrate the feasibility of employing the proposed LNA for production-ready wireless backhaul point-to-point communication systems. A possible installation scenario has been depicted, in order to verify the maximum distance at which TX and RX antennas can be placed and employing the proposed LNA as first amplifying stage of the receiver chain.
关键词： LNA,GaAs,E-band,MMIC,millimeter wave circuits
更新于2025-09-10 09:29:36
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Synthesis Technique for Low-Loss mm-Wave T/R Combiners for TDD Front-Ends
摘要： A time-division duplex (TDD) transmit/receive (T/R) millimeter-wave (mm-wave) front-end comprises a power amplifier (PA), a low-noise amplifier (LNA), an antenna switch, and appropriate passive matching and combining networks. In this paper, a synthesis methodology is proposed that minimizes the overall losses by combining the PA output and the LNA input matching networks together with the T/R switch into one network. The technique improves mm-wave transceiver performance in terms of PA efficiency and LNA noise figure. The proposed T/R combiner can achieve high linearity and can handle large PA output voltage swings. The architecture can be implemented in any process which provides high integration capability. A Ka-band implementation is demonstrated using 45 nm CMOS silicon-on-insulator that includes a high power, four-stack-based PA and an inductively source-degenerated cascode-based LNA. Within the front-end, the PA achieves saturated output power of 23.6 dBm with peak power added efficiency of 28%, while the LNA achieves NF of 3.2 dB. The overall chip area is 0.54 mm2, including pads.
关键词： transmit/receive (T/R) switch,low-noise amplifier (LNA),power amplifier (PA),5G transmitters,stacked power amplifier,silicon-on-insulator (SOI),time-division duplex (TDD),CMOS,millimeter-wave (mm-wave),Ka-band
更新于2025-09-04 15:30:14
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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Robust X-band GaN LNA with Integrated Active Limiter
摘要： In this paper, design and measurement of X-Band monolithic microwave integrated circuit (MMIC) low noise amplifiers (LNA) using a commercial 0.25 um microstrip GaN-on-SiC high electron mobility transistor (HEMT) technology are reported. Using a novel active limiting approach in measurements, lower than 1.75 dB noise figure (NF) and higher than 16 W CW input power survivability is obtained from a single chip. To the best of authors’ knowledge, said LNA has the highest input power handling performance for the given noise figure level although transistors are not optimized for low-noise operation and input matching network is realized to compromise between noise figure and input return loss which is better than 10 dB. Results are promising for single chip GaN frontend transceiver architecture realization.
关键词： X-Band,MMIC,active limiter,LNA,survivability,robustness,GaN
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) - San Diego, CA, USA (2018.10.15-2018.10.17)] 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) - A 6 kV ESD-Protected Low-Power 24 GHz LNA for Radar Applications in SiGe BiCMOS
摘要： This paper presents a low-power, ESD-protected 24 GHz single-ended input to differential output single-stage cascode LNA in In?neon’s SiGe BiCMOS technology. The proposed circuit uses bridged T-coils as loads to provide an inductive voltage divider for impedance transformation and extend the bandwidth. To reduce power consumption, the circuit operates from a low supply voltage of 1.5 V. Therefore, to compensate for reduced linearity the circuit uses a multi-tanh doublet. At the center frequency of 24 GHz the ampli?er offers a gain of 12 dB and a noise ?gure of 2.6 dB including the on-chip input balun. The circuit exhibits a competitive linearity of ?10 dBm input-referred 1dB compression point at 24 GHz. The LNA consumes 18 mA from a single 1.5 V supply. The ESD hardness has been investigated using an HBM pulse generator. The circuit exhibits a 6 kV HBM hardness at the input RF pin. The chip size including the pads is 0.49 mm2.
关键词： low-power,radar applications,ESD-protected,SiGe BiCMOS,LNA,24 GHz
更新于2025-09-04 15:30:14