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Rapid crystallization of electrohydrodynamically atomized ZrO2 thin films by laser annealing
摘要： This paper aims to provide a simple and rapid fabricating method for solution-based ZrO2 thin films. The ZrO2 thin film was firstly deposited on a 316L stainless steel substrate by electrohydrodynamic atomization. Then the crystallization process was carried out by a 4W Nd:YAG laser with a wavelength of 1064 nm. The morphology, structure and evolution of chemical bonds (Zr and O) were evaluated by transmission electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. After laser annealing, the O 1s (O-containing ions in ZrO2) fraction rose from 22.6 % to 51.1 %, and the principal tetragonal phase composition was obtained. The large temperature gradients that derived from the photothermal effect contribute to the fast crystallization during the laser treatments. The tribological and electrochemical corrosion experiments reveal that the laser crystallized films have significantly well wear and corrosion resistance, close to those of conventionally crystallized films. This fabricating method is simple, energy-saving and could achieve the spatially-resolved crystallization of films with a minimal temperature increase on the underlying substrates.
关键词： Laser annealing,ZrO2 thin films,Electrohydrodynamic atomization,Tribological and corrosion properties
更新于2025-09-16 10:30:52
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Recrystallization and activation of ultra-high-dose phosphorus-implanted silicon using multi-pulse nanosecond laser annealing
摘要： Highly phosphorus-doped silicon source/drains are investigated to improve the performance of N-type metal-oxide-semiconductor field-effect transistors by decreasing their resistance and imparting strain to their channels. To find effective high temperature annealing for the activation of phosphorus in the source/drains, we apply single- and multi-pulse nanosecond laser annealing on highly phosphorus-doped silicon. The microstructure, strain, and electrical properties of highly phosphorus-doped silicon before and after laser annealing are analyzed. Our results demonstrate that the defects in both the recrystallized silicon and the end of range are decreased with 600 mJ cm?2 10-pulse annealing while considerable increase in phosphorus activation is achieved.
关键词： nanosecond laser annealing,strain engineering,activation,phosphorus-doped silicon,recrystallization
更新于2025-09-16 10:30:52
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Remarkable Improvement in Foldability of Polya??Si Thina??Film Transistor on Polyimide Substrate Using Blue Laser Crystallization of Amorphous Si and Comparison with Conventional Polya??Si Thina??Film Transistor Used for Foldable Displays
摘要： Highly robust poly-Si thin-film transistor (TFT) on polyimide (PI) substrate using blue laser annealing (BLA) of amorphous silicon (a-Si) for lateral crystallization is demonstrated. Its foldability is compared with the conventional excimer laser annealing (ELA) poly-Si TFT on PI used for foldable displays exhibiting field-effect mobility of 85 cm2 (V s)-1. The BLA poly-Si TFT on PI exhibits the field-effect mobility, threshold voltage (VTH), and subthreshold swing of 153 cm2 (V s)-1, -2.7 V, and 0.2 V dec-1, respectively. Most important finding is the excellent foldability of BLA TFT compared with the ELA poly-Si TFTs on PI substrates. The VTH shift of BLA poly-Si TFT is ±0.1 V, which is much smaller than that (±2 V) of ELA TFT on PI upon 30 000 cycle folding. The defects are generated at the grain boundary region of ELA poly-Si during folding. However, BLA poly-Si has no protrusion in the poly-Si channel and thus no defect generation during folding. This leads to excellent foldability of BLA poly-Si on PI substrate.
关键词： grain boundary,polyimide substrates,protrusions,flexible low-temperature poly-Si thin-film transistors,blue laser annealing
更新于2025-09-16 10:30:52
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Direct Laser Annealing of Surface‐Enhanced Raman Scattering Substrates
摘要： A laser-annealing technique for the fabrication of surface-enhanced Raman scattering (SERS) substrates consisting of closely packed gold nanoparticles (AuNPs) with high densities and small separation distances is reported. Laser annealing enables strongly localized interaction between the laser spot and the colloidal AuNPs within the irradiation area. Multiple stages of the alternative spin-coating of colloidal AuNPs and laser-annealing processes enable filling of the gaps between the AuNPs by newly produced ones in the subsequent stages. Thus, both the fill factor and the distribution density of the AuNPs are increased largely with increasing the number of fabrication stages, which favors the improvement of the SERS performance. In contrast, the conventional furnace or hot-plate annealing heats the substrate and the colloidal film simultaneously, and the melted AuNPs tend to aggregate to form larger ones with large separation distance. Thus, compared with the SERS effective by furnace-annealed substrates, laser-annealed substrates supply a further enhancement factor larger than 3.7. Thus, laser annealing is proved as a more effective approach for the fabrication of SERS substrates through annealing colloidal AuNPs.
关键词： direct laser annealing,furnace annealing,gap widths,surface-enhanced Raman scattering substrates,fill factors,closely packed gold nanoparticles
更新于2025-09-12 10:27:22
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[IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Udine, Italy (2019.9.4-2019.9.6)] 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Numerical simulations of nanosecond laser annealing of Si nanoparticles for plasmonic structures
摘要： This paper reports numerical simulations of nanosecond laser thermal annealing of plasmonic structures based on Si-nanoparticles embedded in a SiO2 matrix. From these simulations, we extracted guidelines for the structure design to be adopted. This study also investigates the expected laser annealing process window and the influence of nanoparticles coverage.
关键词： plasmonic nanostructures,melt,Si nanoparticles,Laser annealing
更新于2025-09-12 10:27:22
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Solution-Processed Oxide Complementary Inverter via Laser Annealing and Inkjet Printing
摘要： Metal–oxide–semiconductors (MOS) have become an ideal candidate for the next-generation optoelectronic device applications. However, high processing temperature and complicate processes are still tremendous challenge in developing solution-based complementary MOS (CMOS) inverter. In this article, for the first time, femtosecond (fs) laser was used to realize controllable annealing for solution-based CMOS inverter. The achievement of nonstoichiometric p-type oxide thin films was ascribed to the photo-assisted conversion of precursor to metal–oxide (M–O) lattices along with the formation of atom vacancies in oxide lattice due to carrier excitation and relaxation using laser annealing (LA). The field effect mobility of the p- and n-type M–O thin-film transistors (TFTs) with inkjet printing (IJP) and LA was 0.91 and 7.07 cm2/V·s, respectively. Moreover, location control capacity was exploited to separately anneal the p- and n-type oxide deposited with IJP for the fabrication of TFTs, which significantly simplified the fabrication process of the inverter. CMOS inverter with high noise margin and moderate voltage gain above 10 was also obtained. Our work significantly improved the ability to selectively manipulate the functionality and properties of the irradiated materials. The results demonstrated that logic gates based on all-oxide can be large area integrated using our strategy, exhibiting attractive properties and applications of the CMOS integrated circuits in oxide electronics.
关键词： p-type oxide semiconductor,inkjet printing (IJP),Complementary inverter,femtosecond (fs) laser annealing (LA),thin-film transistors (TFTs)
更新于2025-09-12 10:27:22
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[IEEE 2019 Cross Strait Quad-Regional Radio Science and Wireless Technology Conference (CSQRWC) - Taiyuan, China (2019.7.18-2019.7.21)] 2019 Cross Strait Quad-Regional Radio Science and Wireless Technology Conference (CSQRWC) - High Performance Germanium n <sup>+</sup> /p Shallow Junction for nano-Scaled n-MOSFET
摘要： In this work, we study excimer laser annealing (ELA) on phosphorus-implanted germanium with implantation energies and doses of 30 keV, 5x1015 cm-2, and 10 keV, 5x1014 cm-2, respectively. A lower specific contact resistivity of Al/n+Ge and better performance of Ge n+/p diode than that obtained by rapid thermal annealing have been fulfilled. Moreover, by a combination of low temperature pre-annealing (LTPA) and ELA, we achieved a Ge n+/p diode with a rectification ratio of about 107 and decreased phosphorus diffusion in Ge during ELA. A increased activation concentration up to 6x1019cm-3 with a high activation ratio about 85% of phosphorus have been achieved in a low ion implanted dose and energy.
关键词： low temperature pre-annealing,excimer laser annealing,germanium,shallow junction
更新于2025-09-11 14:15:04
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Nanoplasmonics - Fundamentals and Applications || Laser Annealing as a Platform for Plasmonic Nanostructuring
摘要： Nanoconstruction of metals is a significant challenge for the future manufacturing of plasmonic devices. Such a technology requires the development of ultra‐fast, high‐throughput and low cost fabrication schemes. Laser processing can be considered as such and can potentially represent an unrivalled tool towards the anticipated arrival of modules based in metallic nanostructures, with an extra advantage: the ease of scalability. Specifically, laser nanostructuring of either thin metal films or ceramic/metal multilayers and composites can result on surface or subsurface plasmonic patterns, respectively, with many potential applications. In this chapter, the photo‐thermal processes involved in surface and subsurface nanostructuring are discussed and processes to develop functional plasmonic nanostructures with pre‐determined morphology are demonstrated. For the subsurface plasmonic conformations, the temperature gradients that are developed spatially across the metal/dielectric structure during the laser processing can be utilized. For the surface plasmonic nanoassembling, the ability to tune the laser's wavelength to either match the absorption spectral profile of the metal or to be resonant with the plasma oscillation frequency can be utilised, i.e. different optical absorption mechanisms that are size‐selective can be probed. Both processes can serve as a platform for stimulating further progress towards the engineering of large‐scale plasmonic devices.
关键词： laser annealing,surface plasmon resonance,laser induce self‐assembly,plasmonics,plasmonic nanoparticles
更新于2025-09-11 14:15:04
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Poly‐GeSn Junctionless Thin‐Film Transistors on Insulators Fabricated at Low Temperatures via Pulsed Laser Annealing
摘要： High-performance polycrystalline GeSn (poly-GeSn) junctionless thin-film transistors (JL-TFTs) are proposed and fabricated at low process temperatures. Poly-GeSn thin films with a Sn fraction of 4.8% are prepared using cosputtering and pulsed laser annealing (PLA) techniques. The ultra-rapid nonequilibrium thermodynamic process with 25 ns PLA renders a good crystal GeSn thin film at a low temperature. The ION/IOFF ratio increases by three orders of magnitude with GeSn channel thickness varying from 60 to 10 nm, suggesting that switch-off current is dominated by depletion width. A superior effective mobility of 54 cm2 V-1 s-1 is achieved for the JL-TFT with a 10 nm-thick GeSn film as a consequence of gate/channel interface passivation by oxygen plasma.
关键词： pulsed laser annealing,junctionless thin-film transistors,GeSn
更新于2025-09-11 14:15:04
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European Microscopy Congress 2016: Proceedings || XTEM observations revealing high diffusivity and Ge segregation in UV laser pulse annealed SiGeO and GeTiO amorphous films
摘要： XTEM observations revealing high diffusivity and Ge segregation in UV laser pulse annealed SiGeO and GeTiO amorphous films
关键词： laser annealing,thin films,nanoparticles,Ge diffusion
更新于2025-09-11 14:15:04