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Front contact optimization for rear-junction SHJ solar cells with ultra-thin n-type nanocrystalline silicon oxide
摘要： In this work, ultra-thin n-type hydrogenated nanocrystalline silicon oxide [(nc-SiOx:H (n)] film was used to replace amorphous silicon [a-Si:H (n)] as electron transport layer (ETL) in rear-junction silicon heterojunction (SHJ) solar cell to reduce front parasitic absorption. The contact resistivity between the transparent conductive oxide (TCO) and ultra-thin ETL interface plays an important role on the cell performance. A nanocrystalline silicon (nc-Si:H) contact or seed layer was introduced in the solar cell with ultra-thin nc-SiOx:H and the impact of the nc-Si:H thickness on the cell performance was investigated. To demonstrate scalability, bifacial solar cells with 10 nm ETL were fabricated on the M2 (244 cm2) wafer. The best cell performance is obtained by the solar cell with 5 nm nc-SiOx:H (n) and 5 nm nc-Si:H (n) contact layer and it exhibits open-circuit voltage (Voc) of 738 mV, fill factor (FF) of 80.4%, short-circuit current density (Jsc) of 39.0 mA/cm2 and power conversion efficiency (η) of 23.1% on M2 wafer. Compared to the one with nc-SiOx:H (n), an increase of 3%abs of FF and 0.5%abs of η and lower front contact resistivity is demonstrated for the solar cells with nc-Si:H (n) / nc-SiOx:H (n) double layer, which is caused by the lower energy barrier for electrons, according to the band diagram calculated by the AFORS-HET simulator. A simulation on the solar cell optical and electrical losses was done by the Quokka 3 simulator and shows much lower electrical transport loss and a bit higher front surface transmission loss for the one with double layer than nc-SiOx:H (n) single layer.
关键词： Loss analysis,Nanocrystalline silicon oxide,Silicon heterojunction solar cells,Electron transport layer
更新于2025-09-23 15:19:57
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Sputtered Transparent Electrodes (IO:H and IZO) with Low Parasitic Near-Infrared Absorption for Perovskite-Cu(In,Ga)Se <sub/>2</sub> Tandem Solar Cells
摘要： Hybrid lead halide perovskite solar cells (PSCs) in tandem application with copper indium gallium diselenide (CIGS) solar cells represent one of the most promising all-thin-film technologies for next-generation photovoltaic devices. To minimize parasitic near-infrared (NIR) absorption losses in the electrodes, this work advances hydrogenated indium oxide (IO:H) and indium zinc oxide (IZO) electrodes for semi-transparent perovskite solar cells. The total NIR absorptance (800 nm to 1300 nm) of the perovskite top cell is reduced to <7 %, maximizing the bottom cell output current. Already taking first steps towards up-scaling, the perovskite active area is increased to match the CIGS active area of 0.5 cm2, and the RS is optimized by the implementation of a metal grid. The semitransparent perovskite solar cell reaches a power conversion efficiency of 15 %. Combined with a CIGS bottom solar cell, a 4-terminal tandem solar cell with 23 % power conversion efficiency is demonstrated. We conduct detailed current loss analyses of the complete tandem devices to monitor and evaluate the improvements of this work.
关键词： CIGS,tandem,indium oxide,TCO,current loss analysis,Perovskite
更新于2025-09-16 10:30:52
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Device Parameter Extraction for Loss Analysis of Silicon Solar Cells Based on Intelligent Model Fitting
摘要： A fully automated and rigorous loss analysis routine that provides a breakdown of the loss components occurring in silicon solar cells is presented in this work. The routine combines large-area two-dimensional modeling and smart auto-fitting routines with luminescence imaging. This allows the spatially resolved information in luminescence images to be analyzed to extract recombination parameters partitioned by regions (e.g. wafer edge, under metal contacts, over passivated areas), as well as the spatial distribution of contact resistance. After these cell parameters have been extracted, a loss analysis of open-circuit voltage can be performed by simulating the open-circuit condition and examining the various recombination currents, and a loss analysis of fill factor can be performed by successively turning off the effects of factors that degrade it in simulation. The technique is demonstrated on a multicrystalline silicon PERC solar cell.
关键词： Silicon wafer solar cells,model fitting,loss analysis,multivariate regression,luminescence imaging
更新于2025-09-12 10:27:22
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Performance Analysis of 0.4–1.2-μm CdTe Solar Cells
摘要： Thin-?lm cadmium telluride (CdTe) solar cells with an absorber thickness range of 0.4–1.2 μm were fabricated by close-space sublimation on a transparent MgZnO window layer. Microscopy cross sections showed that a signi?cant fraction of the CdTe crystallites extended throughout the absorber layer, and capacitance measurements demonstrated that the absorbers were depleted into forward bias. Current and ?ll factor loss analyses were used to identify dominant loss mechanisms in the devices as a function of absorber thickness, and photoluminescence measurements were increasingly in?uenced by back-surface recombination as the absorber was made thinner. The thinner CdTe devices showed modest current and ?ll-factor reduction but overall good diode quality, and the highest ef?ciency of 15% was achieved with 1.2-μm CdTe.
关键词： Close-space sublimation (CSS),photoluminescence (PL),loss analysis,thin cadmium telluride (CdTe)
更新于2025-09-12 10:27:22