- 标题
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- 实验方案
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<i>(Invited)</i> 3D Integration Processes for Advanced Sensor Systems and High-Perfomance RF Components
摘要： Sensor systems are the key elements of today’s automotive, health care, environmental and Internet-of-Things (IoT) applications. By using MEMS sensors data like physical or electrical parameters in production equipment, gas concentration in the environment or chemical parameters in fluids can be recorded, digitized and transferred for further processing e.g. by means of big data algorithms in a server or cloud environment. For realizing such systems advanced sensors, which are in many cases based on sophisticated nano-technologies have to be combined with standard CMOS devices, which digitize the analogue sensor signals and optimize the overall data acquisition and data transmission. 3D integration processes are most suitable for high performant and reliable integration of sensor functions and electronic processing and simultaneously minimize the footprint, weight and form-factor of the sensor/IC product. 3D integration processes as fine-pitch Trough-Silicon-Vias (TSV) technology and various wafer bond technologies will be introduced in this paper.
关键词： 3D integration,MEMS sensors,wafer bond technologies,TSV technology,heterogeneous integration
更新于2025-09-23 15:21:01
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Thermoresistance of <i>p</i> -Type 4H-SiC Integrated MEMS Devices for High-Temperature Sensing
摘要： There is an increasing demand for the development and integration of multifunctional sensing modules into power electronic devices that can operate in high temperature environments. Here, the authors demonstrate the tunable thermoresistance of p-type 4H–SiC for a wide temperature range from the room temperature to above 800 K with integrated flow sensing functionality into a single power electronic chip. The electrical resistance of p-type 4H–SiC is found to exponentially decrease with increasing temperature to a threshold temperature of 536 K. The temperature coefficient of resistance (TCR) shows a large and negative value from (cid:1)2100 to (cid:1)7600 ppm K corresponding to a thermal index of 625 K. From the threshold temperature of 536–846 K, the electrical resistance shows excellent linearity with a positive TCR value of 900 ppm K. The authors successfully demonstrate the integration of p–4H–SiC flow sensing functionality with a high sensitivity of 1.035 μA(m s)^(-0.5) mW^(-1). These insights in the electrical transport of p–4H–SiC aid to improve the performance of p–4H–SiC integrated temperature and flow sensing systems, as well as the design consideration and integration of thermal sensors into 4H–SiC power electronic systems operating at high temperatures of up to 846 K.
关键词： thermoresistance,MEMS sensors,silicon carbide,high temperatures
更新于2025-09-19 17:15:36
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[IEEE 48th European Solid-State Device Research Conference (ESSDERC 2018) - Dresden (2018.9.3-2018.9.6)] 2018 48th European Solid-State Device Research Conference (ESSDERC) - Smart Connected Sensors - Enablers for the IoT
摘要： The Internet of Things (IoT) is all about making life simpler and more exciting for consumers by interconnecting the world around them. But how can this promise of the IoT be fulfilled? In the world of IoT, microelectromechanical systems (MEMS) sensors form the backbone of the interface between the user and the multitudes of devices that surround us, such as smartphones, wearables, robots and drones. However, making devices able to sense and be connected is simply not enough to realize the grand promise of the IoT. The fact remains, that IoT will only be successful if it follows a user-centric approach, i.e. by solving real-life everyday challenges, making life simpler, enhancing ease of use. Furthermore, ubiquitous sensing of everything on all manner of devices in an ever-increasing number of complex environments poses definite and growing challenges for sensor providers. On ASIC and MEMS development level, these challenges do translate to a significant spread of requirements for multi-platform application approaches by enhancing classical key performance indicators as very high signal evaluation performance or ultra-low power consumption on one side, but also adding new architectures for smart sensor signal fusion or connectivity in arbitrary application use modes on the other side. The continuing rise of complexity due to future IoT market requirements lead to even stronger demand for “first time right” design methodologies in general, and more powerful and effective verification methodologies in particular.
关键词： MEMS sensors,smart connected sensors,connectivity,user-centric approach,signal fusion,IoT,ASIC
更新于2025-09-04 15:30:14