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[IEEE 2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) - Bangalore (2018.3.16-2018.3.17)] 2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) - AlInN/GaN MIS-HEMTs with High Pressure Oxidized Aluminium as Gate Dielectric
摘要： AlInN/GaN metal insulator semiconductor high electron mobility transistor (MIS-HEMT) with high pressure oxidized aluminium as gate dielectric is investigated in this paper. The fabricated MIS-HEMT shows more than six orders of reduction in the gate leakage current in reverse bias and more than three orders of reduction in forward bias compared to the reference HEMT devices also fabricated on same substrates. A maximum drain current of 750 mA/mm was achieved due to improvement in the gate swing for MIS-HEMT. The MIS-HEMT devices also showed good improvement in the subthreshold slope and ID,ON/ID,OFF ratio compared to HEMT devices.
关键词： gate leakage current,MIS-HEMT,high pressure oxidation,AlInN/GaN,HEMT,Al2O3
更新于2025-09-23 15:23:52
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Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates
摘要： Monolithically integrated enhancement/depletion-mode (E/D-mode) GaN-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) and inverters, were fabricated on an ultrathin-barrier (UTB) AlGaN/GaN heterostructure grown on Si substrates. By employing a graded AlGaN back barrier in the UTB-AlGaN/GaN heterostructure, a high threshold voltage (VTH) of +3.3 V is achieved in the E-mode MIS-HEMTs. The fabricated MIS-HEMT inverter features a high logic swing voltage of 7.76 V at a supply voltage of 8 V, a small VTH hysteresis as well as deviation less than 0.2 V. The UTB AlGaN/GaN-on-Si technology provides a good platform for integration of MIS-gate-based drivers and power transistors.
关键词： monolithic integration,ultrathin-barrier,GaN,E/D-mode,MIS-HEMT,inverter,AlGaN/GaN heterostructure,Si substrate
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen, China (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs
摘要： Both enhancement- and depletion-mode AlGaN/GaN metal-insulator-semiconductor HEMTs were fabricated with Al2O3 as the gate dielectric formed by atomic layer deposition (ALD). With the common problems of threshold voltage hysteresis in AlGaN/GaN MIS-HEMTs, DC I-V and fast transient frequency-dependent C-V measurements were performed to characterize the threshold voltage shifts ?Vth and hence to systematically study the underlying mechanism. The experimental results reveal that ?Vth can be as high as 1.0 V at VG,max = 5 V in transient I-V measurements despite the much lower values of 0.42 V in static and CV measurements. This has significant implications in using AlGaN/GaN MIS-HEMTs for high voltage switching applications. Besides, multi-frequency C-V measurements show that the primary ?Vth is frequency independent but the second onset of voltage shifts (?V2) shows obvious frequency dependence. These results imply the likely mechanism of slow (deep) Al2O3 interface traps accounting for ?V1 hysteresis, and fast (shallow) interface traps accounting for ?V2.
关键词： AlGaN/GaN MIS-HEMT,Al2O3/III-N interface traps (fast and slow) and threshold voltage hysteresis.
更新于2025-09-23 15:21:21
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GaN MIS-HEMT PA MMICs for 5G Mobile Devices
摘要： As the data transfer rates in various mobile systems increase, the needs for 5G wireless communication systems have also been correspondingly increased. For the enhancement of data transfer rates, 28 GHz, one of the high frequency bands proposed by Korea for global standards, was chosen for 5G systems. While GaN-based high-electron-mobility transistors (HEMTs) are very promising candidates for 5G network applications due to their usage in high output power amplifiers, typical GaN HEMTs only operate in a normally-on state. However, for successful operations of mobile handsets of 5G systems, a normally-off device operating under positive gate bias is required, which provides advantages of decreased circuit complexity and system cost, as well as potential for use in the domain of digital circuits. For positive gate bias operation, metal-insulator-semiconductor (MIS)-HEMT devices were fabricated by using the ETRI GaN MIS-HEMT process. We designed and fabricated MIS-HEMTs and characterized their performances. In addition to the adaptation of a gate recess technique, we employed an Al2O3 gate insulator to shift the threshold voltage in GaN MIS-HEMTs. The power amplifier (PA) monolithic microwave integrated circuit (MMIC) was designed and operated under a positive gate bias for 5G mobile handsets and exhibited a maximum output power of 29.5 dBm, a power gain of 11 dB, and a power added efficiency (PAE) of 11% at frequencies of 26 and 28 GHz.
关键词： Ka-band,MIS-HEMT,Mobile handsets,Power amplifiers,GaN,5G,e-mode
更新于2025-09-19 17:15:36
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Simulation Model Development for Packaged Cascode Gallium Nitride Field-Effect Transistors
摘要： This paper presents a simple behavioral model with experimentally extracted parameters for packaged cascode gallium nitride (GaN) field-effect transistors (FETs). This study combined a level-1 metal–oxide–semiconductor field-effect transistor (MOSFET), a junction field-effect transistor (JFET), and a diode model to simulate a cascode GaN FET, in which a JFET was used to simulate a metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT). Using the JFET to simulate the MIS-HEMT not only ensures that the curve fits an S-shape transfer characteristic but also enables the pinch-off voltages extracted from the threshold voltage of the MIS-HEMT to be used as a watershed to distinguish where the drop in parasitic capacitance occurs. Parameter extraction was based on static and dynamic characteristics, which involved simulating the behavior of the created GaN FET model and comparing the extracted parameters with experimental measurements to demonstrate the accuracy of the simulation program with an integrated circuit emphasis (SPICE) model. Cascode capacitance was analyzed and verified through experimental measurements and SPICE simulations. The analysis revealed that the capacitance of low-voltage MOSFETs plays a critical role in increasing the overall capacitance of cascode GaN FETs. The turn-off resistance mechanism effectively described the leakage current, and a double-pulse tester was used to evaluate the switching performance of the fabricated cascode GaN FET. LTspice simulation software was adopted to compare the experimental switching results. Overall, the simulation results were strongly in agreement with the experimental results.
关键词： turn-off resistance,GaN FET,MIS-HEMT,SPICE,cascode,behavioral model,parasitic capacitance
更新于2025-09-10 09:29:36