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Advances in III-V semiconductor infrared absorbers and detectors
摘要： Advances in bulk III-V semiconductor material such as InGaAsSb and metamorphic InAsSb, as well as in a variety of type-II superlattices such as InGaAs/GaAsSb, InAs/GaSb, and InAs/InAsSb, have provided continuously adjustable cutoff wavelength coverage from the short to the very long wavelength infrared. We perform basic theoretical analysis to provide comparisons of different infrared materials. We also briefly report experimental results on a mid-wavelength InAs/InAsSb type-II superlattice unipolar barrier infrared detector and a focal plane array with significantly higher operating temperature than InSb.
关键词： unipolar barrier,MWIR,infrared detector,e-SWIR,LWIR,antimonide,type-II superlattice,nBn,effective mass
更新于2025-09-23 15:23:52
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[IEEE 2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS) - San Jose, Costa Rica (2020.2.25-2020.2.28)] 2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS) - Advancing Uncooled Infrared Imagers Using An Open-Circuit Voltage Pixel
摘要： A topology leveraging a photodetector in the forward bias region generating an open-circuit voltage is proposed. Connecting the anode of the photodetector to the gate of a MOSFET device operating in the subthreshold region provides the basis for a new open-circuit voltage pixel (VocP). Theoretical analysis outlining the effective photodetector response and performance benefits is described. An integrated circuit (IC) with direct-injection pixels modified to support the VocP front-end and analog output readout fabricated in a CMOS 0.18 μm technology is also presented. The IC allows testing of mid-wave infrared (IR) photodiodes operating in both the photocurrent and VocP modes. The VocP pixel is compared to a traditional reverse bias current mode photodetector configuration. Simulation, modeling, and measurement show improved sensitivity and faster response time for the VocP over direct photocurrent detection.
关键词： model,ROIC,open-circuit voltage,readout,MWIR,Mid-wave,Voc
更新于2025-09-23 15:21:01
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HgCdTe Quantum Dot Over Interdigitated Electrode for Mid-Wave Infrared Photon Detection and Its Noise Characterization
摘要： In this paper, we report the development of mid-wave infrared (MWIR) photon sensor using solution-processed mercury cadmium telluride (Hg1(cid:1)xCdxTe) semiconductor colloidal quantum dots (CQDs) coated over interdigitated metallic electrode structure, having signiˉcant response in the MWIR spectral band range ((cid:1) ? 2:5–5.0 (cid:3)m) at room temperature. HgCdTe CQD has been chemically synthesized. We have characterized the optical and 1=f noise performances of the developed sensor to understand its behaviors at di?erent operating biases as an introductory step toward development of large-format MWIR focal-plane arrays having similar pixel structure. The optimum biasing conditions have been experimentally evaluated at room temperature. We have achieved a noise equivalent power (NEP) of 2.5 pW at 1.5-V bias voltage which corresponds to detectivity (D(cid:3)) in the order of 108. This work highlights the development of low-cost colloidal HgCdTe quantum dot photodetectors and their utility in the monolithic infrared focal-plane arrays.
关键词： MWIR,CQD,FPA,1/f noise,HgCdTe
更新于2025-09-23 15:19:57
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Study of the MTF of a MWIR T2SL focal plane array in IDDCA configuration
摘要： Type-II InAs/GaSb superlattice (T2SL) has recently matured into a commercially available technology addressing both MWIR and LWIR spectral domains. As the prerequisites such as Quantum Efficiency (QE) and dark current were met, more advanced figures of merits related to the ElectroOptic (EO) system as a whole can now be studied to position this technology. In this paper, we focus on modulation transfer function (MTF) measurements. Knowing the MTF of a detector is indeed of primary importance for the EO system designers, since spatial filtering affects the system range. We realized MTF measurements on a 320 × 256 MWIR T2SL FPA provided by IRnova, using a Continuously Self Imaging Grating (CSIG). The advantage of this experimental configuration is that no high performance projection optics is required thanks to the self-imaging property (known as Talbot effect) to project a pattern with known spatial frequencies on the photodetector. Besides, the pattern being propagation invariant, alignment is easier and the bench does not require exact knowledge of the focal plane distance to operate, opening measurement in Integrated Detector Dewar Cooler Assembly (IDDCA) configuration. Extracted from measurements, the pixel size is 26 μm for a pitch of 30 μm.
关键词： MWIR,MTF,CSIG,T2SL,IDDCA,FPA
更新于2025-09-19 17:15:36
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A Thermoelectrically Cooled nBn Typea??II Superlattices InAs/InAsSb/Ba??AlAsSb Mida??Wave Infrared Detector
摘要： The paper reports on an nBn mid-wave infrared InAs/InAsSb type-II superlattice detector. AlAsSb is shown not to introduce an additional barrier in the valence band. The dark current and photocurrent are analyzed indicating the optimal architecture. The results are compared to the HgCdTe and InAsSb nBn detectors.
关键词： T2SLs InAs/InAsSb,barrier detector,MWIR
更新于2025-09-19 17:13:59
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Low-cost uncooled MWIR PbSe quantum dots photodiodes
摘要： A mid-wave infrared (MWIR) uncooled PbSe-QDs/CdS p–n heterojunction photodiode has been fabricated using a wet-chemical synthesis route. This offers a low-cost alternative to traditional monocrystalline photodiodes relying on molecular beam epitaxy (MBE) technology. It was demonstrated that the post-annealing is critical to tailor the photoresponse wavelength and to improve the performance of photodiodes. After annealing at 673 K in air for 0.5 h, the ligand-free PbSe-QDs/CdS photodiode exhibits a MWIR spectral photoresponse with a cutoff wavelength of 4.2 mm at room temperature. Under zero-bias photovoltaic mode, the peak responsivity and specific detectivity at room temperature are 0.36 (cid:1) 0.04 A W(cid:3)1 and (8.5 (cid:1) 1) (cid:4)108 cm Hz1/2 W(cid:3)1, respectively. Temperature-dependent spectral response shows an abnormal intensity variation at temperatures lower than 200 K. This phenomenon is attributed to the band alignment transition from type II to type I, resulting from the positive temperature coefficient of PbSe. In addition, it was proved that In doped CdSe (CdSe:In) films could be used as a promising new candidate of infrared transparent conductive electrodes, paving the way for monolithic integration of uncooled low-cost MWIR photodiodes on Si readout circuitry.
关键词： infrared transparent conductive electrodes,MWIR,photodiode,CdSe:In,wet-chemical synthesis,PbSe-QDs,annealing
更新于2025-09-16 10:30:52
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Uncooled Mid-wave Infrared Focal Plane Array Using Band Gap Engineered Mercury Cadmium Telluride Quantum Dot Coated Silicon ROIC
摘要： The dominant photon detectors and focal plane arrays (FPAs) in the mid-wave infrared (MWIR) range (λ = 3 μm to 5 μm) use single crystal InSb and HgCdTe materials. The cost of these detectors is high, and cooling at approximately 80 K to 120 K is required to reduce the dark current. Colloidal quantum dots (CQDs) can be used to provide the speed and detectivity (D*) of the quantum detectors with lower fabrication costs than those of single crystal epitaxial materials. The aim of this study is to develop a MWIR area array sensor with an HgCdTe-ternary alloyed semiconductor CQD using a commercially available silicon readout integrated circuit (ROIC). First, we synthesized a solution processed HgCdTe CQD responsive in the MWIR range at room temperature and developed a Schottkey junction photodiode array of 10 × 10 pixels based on the same quantum dots (QDs) to produce a HgCdTe-Si interface suitable for a MWIR photodiode at room temperature. After ensuring its functionality, we developed a 320 × 256-pixel focal plane array (FPA) responsive in the MWIR region by hybridization of the HgCdTe CQD layer over a silicon ROIC die with a direct injection input circuit. The FPA was operated using an indigenously developed Field Programmable Gate Array (FPGA)-based drive unit, and different IR targets were imaged to evaluate its use as a low-cost MWIR FPA. NEΔT value of 4 K achieved at room temperature.
关键词： FPA,MWIR,CQD,NEΔT,HgCdTe
更新于2025-09-12 10:27:22
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[IEEE 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) - Miramar Beach, FL, USA (2019.8.19-2019.8.21)] 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) - Advanced Software for User Interface, User Control, Data/Image Input, and Test Automation for Infrared Led Scene Projectors
摘要： In order to adequately control, test, and analyze Infrared Scene Projectors (IRSP), a user interface needed to be developed to maximize user efficiency. The IRSP control interface was developed for high performance image processing, automated testing, and data capture/analysis.
关键词： MWIR,Infrared LED,Superlattice LED,Hybrid,CMOS,Control Interface,IR Scene Projection
更新于2025-09-12 10:27:22
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Polarimetric Three-Dimensional Topological Insulators/Organics Thin Film Heterojunction Photodetectors
摘要： As a state of quantum matter with insulating bulk and gapless surface states, topological insulators (TIs) have huge potential in optoelectronic devices. On the other hand, polarization resolution photoelectric devices based on anisotropic materials have overwhelming advantages in practical applications. In this work, the 3D TIs Bi2Te3/organics thin film heterojunction polarimetric photodetectors with high anisotropic mobility ratio, fast response time, high responsivity, and EQE in broadband spectra are presented. At first, the maximum anisotropic mobility ratio of the Bi2Te3/organics thin film can reach 2.56, which proves that Bi2Te3 can serve as a sensitive material for manufacturing polarization photoelectric devices. Moreover, it is found that the device can exhibit a broad bandwidth and ultrahigh response photocurrent from visible to middle wave infrared spectra (405?3500 nm). The highest responsivity (Ri) of the device can still reach 1.93 AW?1 at 3500 nm. In addition, the ultrahigh external quantum efficiency is 4534% with a fast response time (1.42 ms). Excellent properties mentioned above indicate that TIs/organics heterojunction devices are suitable for manufacturing high-performance photoelectric devices in infrared region.
关键词： polarization resolved,inorganics/organics heterojunction,photodetector,Bi2Te3 thin film,MWIR photodetectors
更新于2025-09-11 14:15:04
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[IEEE 2019 Photonics North (PN) - Quebec City, QC, Canada (2019.5.21-2019.5.23)] 2019 Photonics North (PN) - Design of a mid-infrared multispecies gas sensor based on Pr <sup>3+</sup> -doped chalcogenides waveguides
摘要： Praseodymium-doped selenide thin films are deposited by radio frequency (RF) magnetron sputtering on thermally oxidized silicon wafers. Ridge waveguides are then processed using photolithography and dry etching techniques. Under optical pumping at 1.55 μm, broadband guided mid-infrared photoluminescence is recorded between 3.5 and 5.5 μm. Optical design confirmed that these active waveguides allow single-mode optical propagation at different absorption wavelengths of important environmental gases (CO2, CO, NO). Mid-Wave Infrared (MWIR) multimode interferometer (MMI)-based demultiplexer are designed for multispecies gas sensing.
关键词： MWIR,MMI,mid-infrared,multispecies sensing,rare-earth,chalcogenides
更新于2025-09-11 14:15:04