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Casimir-Lifshitz quantum state of superhydrophobic black-silicon surfaces manufactured by a metal-assisted hierarchical nano-microtexturing process
摘要： We investigated superhydrophobic Si nanosurfaces similar to the lotus leaf by performing a hierarchical nanotexturing process on micropyramidal Si surfaces. The process was carried out using a metal-assisted chemical etching process based upon the deposition of Ag nanoparticles. The hierarchical micro-nanosurfaces showed a superhydrophobic character with contact angles of approximately 134～150°. The photon tunnelling also provides a strong light absorption as a black Si. The surface-light emission from broad and sharp photoluminescence was observed in the wavelength ranges of 414.7～440 and 509～516.2 nm. The ?eld-induced tunnelling current on nanosurface shows the formation of quantum surface states. From the analyses of Casimir-Lifshitz quantum state of a photon in vacuum, the superhydrophobic behaviour of water droplet is closely related to the nanosurface and the nanoporous cavity shows the absorption of terahertz energy. Si nanosurface shows the broadband absorption in the spectral range of 800～900 cm?1 corresponding to the energy range of 99.2～111.6 meV with 24～27 THz.
关键词： Metal-assisted etching,hierarchical nano-microstructure,Ag nanodot deposition,superhydrophobic nanosurface
更新于2025-11-14 15:14:40
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Interfacial Contact is Required for Metal-Assisted Plasma Etching of Silicon
摘要： For decades, fabrication of semiconductor devices has utilized well-established etching techniques to create complex nanostructures in silicon. The most common dry process is reactive ion etching which fabricates nanostructures through the selective removal of unmasked silicon. Generalized enhancements of etching have been reported with mask-enhanced etching with Al, Cr, Cu, and Ag masks, but there is a lack of reports exploring the ability of metallic films to catalytically enhance the local etching of silicon in plasmas. Here, metal-assisted plasma etching (MAPE) is performed using patterned nanometers-thick gold films to catalyze the etching of silicon in an SF6/O2 mixed plasma, selectively increasing the rate of etching by over 1000%. The catalytic enhancement of etching requires direct Si-metal interfacial contact, similar to metal-assisted chemical etching (MACE), but is different in terms of the etching mechanism. The mechanism of MAPE is explored by characterizing the degree of enhancement as a function of Au catalyst configuration and relative oxygen feed concentration, along with the catalytic activities of other common MACE metals including Ag, Pt, and Cu.
关键词： nanofabrication,MACE,silicon processing,reactive ion etching,metal assisted etching
更新于2025-09-23 15:23:52
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Enhanced metal assisted etching method for high aspect ratio microstructures: Applications in silicon micropillar array solar cells
摘要： A solar cell device, fabricated on high density array cylindrical pillars, enables photogenerated carrier collection in the radial direction, thus shortening the path length of the carriers reaching the junction. It also provides advantages over conventional planar junction solar cells, such as reduced surface re?ectance and enhanced light trapping. In this study, highly ordered Si micropillars were fabricated by photolithography and metal assisted etching (MAE) methods. It is shown that the use of ethanol as a solvent during the etching process and increasing HF concentration in the MAE solution both improve the quality of the surfaces of the pillars. Micropillars with smooth sidewalls and a high aspect ratio were obtained in this way. Solar cells with a radial junction were then fabricated on these micropillars. Standard doping, SiO2/SiNx passivation, and metallisation steps were carried out for the fabrication of solar cells with di?erent micropillar lengths. A signi?cant decrease in re?ectance values was observed as the micropillar length increased, as expected. Solar cell short circuit current density (Jsc) and e?ciency (η) of the solar cells tended to increase with micropillar length up to 11.5 μm and then decrease due to increased surface recombination. The maximum e?ciency achieved in this study is 17.26%.
关键词： Solar cell,Ethanol,Micropillar,Metal assisted etching,High aspect ratio,Radial junction
更新于2025-09-16 10:30:52