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MSM-photodetector with ZnSe/ZnS/GaAs Bragg reflector
摘要： The effect of a ZnSe/ZnS/GaAs distributed Bragg reflector on the spectral response of a metal–semiconductor–metal (MSM)-diode is investigated. Good agreement is obtained between the calculated and experimental reflection spectra of the ZnSe/ZnS/GaAs heterostructure forming a distributed Bragg reflector in the MSM-diode. The MSM-detector provides a two-color response at 420 and 472 nm, a sharp decrease in photosensitivity in the long-wave part of the response signal, high quantum efficiency of 53%, and low dark current of 5 × 10?10 A. The two-color response of the detector can be adjusted to the desired wavelength by appropriately selecting the heterostructure parameters.
关键词： Metal–semiconductor–metal (MSM) diode,Dark current,Heterostructure,Infrared detectors,Bragg reflector,Spectral response
更新于2025-09-19 17:13:59
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[IEEE 2018 15th IEEE India Council International Conference (INDICON) - Coimbatore, India (2018.12.16-2018.12.18)] 2018 15th IEEE India Council International Conference (INDICON) - Fabrication and Characterization of Organic-Inorganic Hybrid Perovskite CH <sub/>3</sub> NH <sub/>3</sub> PbI <sub/>3</sub> Based Metal-Semiconductor-Metal Photodetector
摘要： Organic-inorganic perovskite CH3NH3PbI3 is used for the fabrication of thin film photodetector, which is synthesized via the sol-gel chemical route. The prepared hybrid perovskite CH3NH3PbI3 thin film are characterized by X-ray diffraction (XRD), high resolution scanning electron microscope (HRSEM), photoluminescence. XRD result confirmed the formation of the tetragonal phase of CH3NH3PbI3 with crystallite size 15.7 nm. HRSEM image of hybrid perovskite CH3NH3PbI3 thin film confirmed the uniform distribution of particles and average particle size 30 nm. An efficient photoluminescence band is observed at 1.59 eV in hybrid perovskite CH3NH3PbI3 thin films at ambient temperature when excited with 405 nm wavelength light. Finally, the hybrid perovskite CH3NH3PbI3 thin film is investigated for electrical and optical response using fabricated metal-semiconductor-metal (MSM) photodetector.
关键词： Organic-inorganic hybrid perovskite,Responsivity,Metal-semiconductor-metal,Photodetector
更新于2025-09-19 17:13:59
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Complementary metal oxide semiconductor (CMOS) compatible gallium arsenide metal-semiconductor-metal photodetectors (GaAs MSMPDs) on silicon using ultra-thin germanium buffer layer for visible photonic applications
摘要： The monolithic integration of III–V materials on silicon appears as the most promising, cost-effective, and versatile method for next-generation optoelectronic devices. Here, we report on GaAs metal-semiconductor-metal photodetectors integrated on an Si substrate by metal-organic chemical vapor deposition. The device architecture is based on a GaAs active layer grown on Si via ultrathin, low-temperature Ge buffer layers. The Ge-on-Si acts as a “virtual” substrate to reduce the overall structural defects in the GaAs device layers. The metal-semiconductor junction characteristics were optimized to effectively suppress the dark current and passivate the interface defects. This was achieved through the insertion of an ultrathin Al2O3 interlayer at the metal/GaAs interface. The results show that a Schottky barrier height of 0.62 eV and 0.8 eV for electrons and holes, respectively, can be achieved. Circular devices with diameters ranging from 30 to 140 μm were fabricated. The measured room temperature dark current is ～48 nA for an applied reverse bias of 1.0 V and a device diameter of 30 μm. Additionally, the GaAs metal-semiconductor-metal structure exhibited a remarkable photoresponsivity and detectivity values of (0.54 ± 0.15) A/W and ～4.6 × 1010 cm Hz1/2 W?1 at 5 V reverse bias, 850 nm, respectively. The proposed method offers great potential for the monolithic integration of GaAs on an Si platform. Furthermore, this technique can be extended to other III–V materials and lattice mismatched systems for high-performance multiple band optoelectronics.
关键词： gallium arsenide,visible photonic applications,metal-semiconductor-metal photodetectors,germanium buffer layer,CMOS
更新于2025-09-16 10:30:52
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Improved spectral and temporal response of MSM photodetectors fabricated on MOCVD grown spontaneous AlGaAs superlattice
摘要： A co-planar metal-semiconductor-metal nonsymmetrical back to back Schottky diode photodetector using natural superlattice AlGaAs grown by metalorganic vapor phase epitaxy on GaAs (100) has been reported. The detection efficiency and photoresponse of the superlattice based device are found significantly superior compared to the one based on high temperature annealed homogeneous AlGaAs. Under a forward bias of 1 V, the peak values of responsivity, detectivity and sensitivity were 10.133 mA/W, 7.6 × 1011 cmHz1/2W?1, 81.06 cm2/W for the device with as-grown natural superlattice and 1.14 mA/W, 7.05 × 1010 cmHz1/2W?1, 2.82 cm2/W for the device with homogeneous composition of AlGaAs, respectively. Besides, the device with natural superlattice structure showed much faster response to the pulsed light with rise and decay time of 560 μs and 1 ms as compared to 2 and 7 ms, respectively for the device with disordered bulk AlGaAs. The superior spectral and temporal characteristics of the device are explained by a model based on a third diode representing the net effect due to the superlattice modulations along with two Schottky diodes at the metal-semiconductor junctions. The third barrier, which is basically due to the periodic modulation in aluminium composition, plays an important role in enhancement of the photocurrent owing to the activation of the superlattice channels under light while keeping the dark current small. The fast sweeping of the photogenerated carries by the intrinsic electric field at the heterointerfaces in the active semiconducting layer makes the characteristic times of the device with the superlattice structures much smaller than one with homogeneous AlGaAs. Degradation in photoresponse and speed is attributed to the interdiffusion as an effect of thermal annealing.
关键词： AlGaAs/GaAs,Spectral response,Metal-semiconductor-metal photodetector,Natural superlattice,Temporal response
更新于2025-09-12 10:27:22
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[IEEE 2017 International Conference on Optical Network Design and Modeling (ONDM) - Budapest (2017.5.15-2017.5.18)] 2017 International Conference on Optical Network Design and Modeling (ONDM) - Ultrafast InGaAs photoswitch for RF signal processing
摘要： Optical processing of radiofrequency signals is demonstrated in this communication using photoswitches made from nitrogen ion implanted InGaAs. The sampling device shows an ultrafast picosecond response time while activated by ultra-short optical pulses or modulated optical beam centered at the wavelength of 1.55 μm. The optoelectronic device is embedded in a microwave coplanar waveguide which has a high electrical bandwidth allowing to process signals in the 1-67 GHz band. We investigate the potentiality of this component to be used either in photonic assisted sampling for future analog-to-digital converters or in photonic assisted heterodyne detection of RF modulated carriers.
关键词： ion implanted InGaAs,photonic assisted data processing,radio over fiber,ultrafast electronics,Photoconductive sampling,heterodyne photomixer,metal-semiconductor-metal devices
更新于2025-09-09 09:28:46