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Multi-scale process simulation for additive manufacturing through particle filled vat photopolymerization
摘要： The majority of research into vat photopolymerization (VP), has been focused on experimental investigations of the influence of process and material parameters. In a specific application of the VP technique, where the resin is filled with particles, this empirical approach has its limitations. In order to fully understand the relation between process parameters and the material properties a detailed numerical analysis is needed. In this paper we present a multi-scale and multi-physical simulation approach to unravel such relations in the complex production process. Using a homogenization approach, the influence of the filler particles, in this case alumina, on the light scattering, conversion characteristics and resulting effective thermal and mechanical properties is determined. The effective composite material and scattering properties are then used as input in a process simulation framework. This enables prediction of key filled-VP characteristics at a structural level. A mesh sensitivity analysis at the component scale reveals that adequate predictions may be obtained with a rather course discretization, facilitating multi-physics VP part simulations.
关键词： Homogenization framework,Multi-physical modeling,Process simulation,Ceramics,Additive manufacturing,Vat photopolymerization,Multi-scale modeling
更新于2025-09-23 15:19:57
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Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme
摘要： In this paper, an electrode-pair model is proposed and demonstrated for the first time to accurately extract the electrical resistance parameters of the planar metal-semiconductor ohmic contacts. Different from the conventional transmission line model, the proposed model layout features a series of separated electrode pairs with the same electrode distance but various widths. Meanwhile, an equivalent circuit for contact resistance composition is set up to clearly specify the contribution of each resistance component to the overall contact performance. The semiconductor sheet resistances underneath the contact and outside the contact area are treated as completely independent variables. The proposed scheme is modeled theoretically and analyzed by the TCAD simulations, and the validity of the model is verified by the experimental data. Finally, the variance of the sheet resistance underneath the contact after annealing treatment can be distinguished by the model and hence more actual and precise specific contact resistance is achieved. This work provides a distinct perspective to understand and quantify the electrical characteristics of the semiconductor ohmic contacts, and it can also assist engineers for a better electrode layout design.
关键词： Ohmic contacts,Gallium Nitride,Semiconductor devices,Modeling process
更新于2025-09-10 09:29:36