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Full Activation of Boron in Silicon Doped by Self-assembled Molecular Monolayers
摘要： The self-assembled molecular monolayer (SAMM) doping has great potential in state-of-the-art nanoelectronics with unique features of atomically precision and non-destructive doping on complex 3D surfaces. However, it was recently found that carbon impurities introduced by the SAMM significantly reduced the activation rate of phosphorus dopants by forming majority carrier traps. Developing a defect-free SAMM doping technique with a high activation rate for dopants becomes critical for reliable applications. Considering that susbstitutional boron does not interact with carbon in silicon, herein we employ Hall measurements and secondary ion mass spectrometry (SIMS) to investigate boron activation rate, and then deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) to analyze defects in boron-doped silicon by the SAMM technique. Unlike the phosphorus dopants, the activation rate of boron dopants is close to 100%, which is consistent with the defect measurement results (DLTS and MCTS). Only less than 1% boron dopants bind with oxygen impurities, forming majority hole traps. Interestingly carbon-related defects in form of CsH and CsOH act as minority trap states in boron-doped silicon which will only capture electrons. As a result, the high concentration of carbon impurities have no impact on the activation rate of boron dopants.
关键词： boron-doped silicon,Full activation,molecular monolayer doping,carbon-related defects,minority carrier trap
更新于2025-09-12 10:27:22
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Towards scalable fabrication of atomic wires in silicon by nano-patterning self-assembled molecular monolayers
摘要： Developing a scalable method to fabricate atomic wires is an important step for building solid-state semiconductor quantum computers. In this work, we developed a selective doping strategy by patterning the self-assembled monolayer to a few nanometers using standard nanofabrication processes, which significantly improves the lateral doping resolution of monolayer doping (MLD) from microscale to nanoscale. Using this method, we further explore the possibility to fabricate phosphorus wires in silicon by patterning self-assembled diethyl vinylphosphonate monolayers into lines with a width ranging from 500 nm to 10 nm. The phosphorus dopants are driven into silicon by rapid thermal annealing, forming dopant wires. Four-probe and Hall effect measurements are employed to characterize the dopant wires. The results show that the conductance is linear with the width for the wires, showing the success of the monolayer patterning process to nanoscale. To fabricate atomic wires made of one or a few lines of phosphorus atoms, we need to significantly shorten the thermal diffusion length and increase the dopant incorporation rate at the same time. Pulsed laser annealing may be a promising solution. The present work provides a promising pathway for mass fabrication of atomic wires in silicon that may find important applications in quantum computing.
关键词： atomic wires,semiconductors,nanoelectronics,Monolayer doping,self-assembled monolayers
更新于2025-09-12 10:27:22