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- 摘要
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- 实验方案
- 产品
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Effect of the anisotropy of etching surface morphology on light-trapping and photovoltaic conversion efficiencies of silicon solar cell
摘要： A homogeneous diamond wire sawing multicrystalline Si surface with nanoscale oval pits was obtained in an acid solution by adding NaNO2, polyethylene glycol–polyvinyl alcohol, and dodecylbenzene sulfonic acid at 12 °C for 130 s. The textured surface showed orientation dependence. The anisotropy of H/D caused different experimental results. The Rave of incident light originating from the direction parallel to saw marks was 22–27% larger than that from the direction perpendicular to saw marks. The photovoltaic conversion efficiency was 0.6–0.8% higher when the thin grid line of Ag electrode was parallel to the saw marks than when in the perpendicular direction. These results indicated that using saw marks can improve the conversion efficiency of solar cells.
关键词： Acid etching,Multi-crystalline silicon,Texturization,Wet chemical etching
更新于2025-09-23 15:21:01
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Eliminating light- and elevated temperature-induced degradation in P-type PERC solar cells by a two-step thermal process
摘要： Light- and elevated temperature-induced degradation (LeTID) can have a severe impact on the carrier lifetime of silicon substrates used in solar cell production and thus remains a crucial challenge for manufacturers. In this work, we introduce a two-step annealing process to mitigate LeTID in multi-crystalline silicon (mc-Si) passivated emitter and rear cell (PERC) solar cells. We demonstrate that the first annealing step (450°C) with a slow belt speed (0.5 m/min) plays a primary role in mitigating LeTID in the cells, but also results in an increase in contact resistance. The application of a second annealing step at a similar temperature (400–500°C) with a faster belt speed (1.4 m/min) recovers the contact resistance whilst maintaining the stability of the cell. Applying this approach to the p-type mc-Si PERC solar cells resulted in a reduction of efficiency loss during light soaking from ~6%rel (control) to ~1%rel (treated sample). This finding is significant for p-type mc-Si solar cell manufacturers, as the process can be applied to finished cells using a standard belt firing furnace to stabilise cell efficiency for long term operation in the field.
关键词： Light- and elevated temperature-induced degradation (LeTID),Multi-crystalline silicon (mc-Si),Two-step thermal process,Contact resistance,Eliminating
更新于2025-09-23 15:19:57
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AIP Conference Proceedings [AIP Publishing 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Fes, Morocco (25–27 March 2019)] 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Zone melting recrystallization of microcrystalline silicon ribbons obtained by chemical vapor deposition
摘要： We present the results achieved with an optical zone melting recrystallization (ZMR) system, which concentrates the radiation of two halogen lamps on the surface of a microcrystalline silicon (μc-Si) ribbon sample, creating a long, 2 mm width molten region (~1414o C). μc-Si ribbon samples measuring up to 25×100 mm2 were previously obtained using an inline optical chemical vapor deposition (CVD) system, that grows silicon layers on top of a silicon dust substrate. Inside the ZMR system, the μc-Si ribbon sample is recrystallized in an argon atmosphere and using a step motor to pull the ribbon at a constant speed between 1 to 6 mm/min, the molten zone travels along the ribbon, recrystallizing the whole sample into a multi-crystalline silicon (mc-Si) ribbon, with an average crystal size in the [1; 10] mm range. It was observed that the physical characteristics of the μc-Si ribbon, like powder substrate incorporation, porosity, thickness, powder grain size used as substrate in the CVD step, have a crucial influence on the recrystallization process and on the electrical properties of the mc-Si ribbon obtained after the ZMR process. Lifetime measurements performed on the recrystallized samples suggest that improvements regarding crystalline quality and possible presence of impurities need to be addressed.
关键词： microcrystalline silicon,solar cells,Zone melting recrystallization,multi-crystalline silicon,chemical vapor deposition
更新于2025-09-12 10:27:22