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Efficiency enhancement in PbS/CdS quantum dot-sensitized solar cells by plasmonic Ag nanoparticles
摘要： Semiconductor quantum dots (Q-dots) are attractive nanomaterials to be used in numerous research areas and device fabrication such as sensors, transistors, and solar cells due to their unique optoelectronic properties. Quantum dot-sensitized solar cells (QDSSCs) have drawn considerable attention due to their cost-effectiveness and ability of multiple exciton generation and tunable energy gap of the quantum dots. In this study, plasmonic Ag colloidal nanoparticle-incorporated plasmonic TiO2 double-layer (nanofiber/nanoparticle) electrodes have been fabricated. These TiO2 electrodes were sensitized with PbS/CdS core-shell quantum dots by successive ionic layer adsorption and reaction (SILAR) technique, and QDSSCs were fabricated with polysulfide electrolyte. Cu2S was formed on brass plate and used as the counter electrode of the QDSSC. A higher power conversion efficiency of 4.09% has been obtained due to the plasmonic effect under the simulated light of 100 mW cm?2 with AM 1.5 spectral filter. The overall efficiency and short-circuit current density of the plasmonic QDSSC are enhanced by 15% and 23%, respectively, with respect to the QDSSC without Ag nanoparticles. The enhanced performance of the plasmonic QDSSC is evidently due to the enhanced optical absorption by localized surface plasmon resonance effect by the Ag nanoparticles in the TiO2 photoanode and the resulting increase in the short-circuit photocurrent.
关键词： Energy gap,Ag nanoparticles,Surface plasmon resonance,Quantum dots,Multiple exciton generation
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE International Conference on Engineering Veracruz (ICEV) - Boca del Rio, Veracruz, Mexico (2019.10.14-2019.10.17)] 2019 IEEE International Conference on Engineering Veracruz (ICEV) - A review on quantum dot solar cells: properties, materials, synthesis and devices
摘要： Quantum dot semiconductors have gain great attraction for the development of high efficiency solar cells due to remarkable optoelectronic properties such as tunable bandgap, multiple exciton generation (MEG) and high extinction coefficient. Despite quantum dot solar cells having theoretical power conversion efficiency of about 66%, actual maximum efficiency is only 16.6%. So, it is important to further understand the relations between properties, elements composition, material structures and synthesis methods, as well as devices architectures in order to propose strategies addressed to close the gap between actual and theoretical power conversion efficiencies. This article exposes the advances related to materials and methods of synthesis, and their impact in quantum dot properties. It also introduces some recent quantum dot solar cells designs.
关键词： multiple exciton generation,quantum dots,photovoltaic device,solar cell
更新于2025-09-12 10:27:22
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Shape-modulated multiple exciton generation and optoelectronic properties in PbSe nanostructures
摘要： Multiple exciton generation (MEG) in semiconductor nanostructures is of great interest for the enhancement of related performances in optoelectronic devices and for the shape dependence of conversion ef?ciency with which absorbed photons are converted into electron-hole pairs. However, theoretical insight into the coupling effects from the size and shape gradient on the MEG and related optoelectronic properties at the atomic level remains unclear. Here, we investigate the MEG and optoelectronic properties in PbSe nanostructures with different morphologies (nanocrystals, nanowires, and nanocones) based on the bond relaxation correlation mechanism, detailed balance principle, and Fermi statistical theory. It is found that size reduction of nanostructures can increase the bandgap, suppress the threshold energy, and enhance the MEG ef?ciency. Moreover, optimal conversion ef?ciency of PbSe nanostructures can be achieved by modulating the geometrical parameters.
关键词： bond relaxation correlation mechanism,PbSe nanostructures,Fermi statistical theory,Multiple exciton generation,optoelectronic properties
更新于2025-09-10 09:29:36