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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Graphene-like Monolayer Yttrium Nitride: A Moderate Semiconductor and Pronounced Electronic Insensitivity to Strain
摘要： It is extremely important to explore two-dimensional materials with excellent properties due to their potential applications in future electronic devices. In the present study, a 2D hexagonal YN (h-YN) is predicted based on theoretical calculations. By assessing the phonon spectrum, ab initio molecule dynamics and elastic constants, the h-YN monolayer is proved to own satisfying thermal, dynamic and mechanical stability. Distinguishing from the most reported 2D transition metal mononitrides which exhibit metallic, monolayer h-YN presents a semiconducting characteristic with a indirect bandgap of 1.144 eV. In particular, h-YN presents unusually insensitive responses of electronic structures to tensile or compressive strain due to the valence orbital hybridization. Moderate bandgap together with insensitive electronic responses to strain endow h-YN a promising candidate in future nanoscale electronic devices in high-strain conditions.
关键词： nano-electronics,strain condition,band structure,two-dimensional
更新于2025-09-23 15:22:29
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Reference Module in Materials Science and Materials Engineering || Optical Lithography
摘要： Optical lithography is a photon-based technique comprised of projecting, or shadow casting, an image into a photosensitive emulsion (photoresist) coated onto the substrate of choice. Today it is the most widely used lithography process in the manufacturing of nano-electronics by the semiconductor industry, a $400 Billion industry worldwide. Optical lithography’s ubiquitous use is a direct result of its highly parallel nature allowing vast amounts of information (i.e., patterns) to be transferred in a very short time. For example, considering the specification of a modern leading edge scanner (150–300-mm wafers per hour and 40-nm two-dimensional pattern resolution), the pixel throughput can be found to be approximately 1.8T pixels per second. Continual advances in optical lithography capabilities have enabled the computing revolution we have undergone over the past 50 years.
关键词： Nano-electronics,Numerical Aperture (NA),Coherence,Resolution,Photoresist,Depth of Focus (DOF),Optical Lithography,Extreme Ultraviolet (EUV),Semiconductor
更新于2025-09-10 09:29:36