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NiO/Perovskite Heterojunction Contact Engineering for Highly Efficient and Stable Perovskite Solar Cells
摘要： Recent research shows that the interface state in perovskite solar cells is the main factor which affects the stability and performance of the device, and interface engineering including strain engineering is an effective method to solve this issue. In this work, a CsBr buffer layer is inserted between NiOx hole transport layer and perovskite layer to relieve the lattice mismatch induced interface stress and induce more ordered crystal growth. The experimental and theoretical results show that the addition of the CsBr buffer layer optimizes the interface between the perovskite absorber layer and the NiOx hole transport layer, reduces interface defects and traps, and enhances the hole extraction/transfer. The experimental results show that the power conversion efficiency of optimal device reaches up to 19.7% which is significantly higher than the efficiency of the device without the CsBr buffer layer. Meanwhile, the device stability is also improved. This work provides a deep understanding of the NiOx/perovskite interface and provides a new strategy for interface optimization.
关键词： lattice mismatches,buffer layers,NiO,contact engineering,perovskite solar cells
更新于2025-09-23 15:21:01
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Preparation of NiO/TiO2 Composite Films for Enhanced Dye Sensitized Solar Cell Efficiency
摘要： Spray pyrolysis technique has been applied for preparing many kinds of thin films because this technique offers a lot of advantages, such as inexpensive cost, uncomplicated process and large scale production. Therefore, the spray pyrolysis technique is used for making pure TiO2 and NiO/TiO2 composite films in this report. A NiO/TiO2 composite film is getting attention to be used as a compact layer in dye sensitized solar cell (DSSC) because NiO can be used as a hole collector and a barrier for energy recombination properties. Moreover, the NiO/TiO2 composite film exhibits superhydrophilic properties that can increase absorption efficiency for a dye solution. This study has an objective to improve the efficiency of DSSC by changing the ratio of NiO/TiO2 in the composite films. The pure TiO2 and NiO/TiO2 composite films were prepared at 200℃ by spray pyrolysis technique using a Ti(OCH(CH3)2)4 solution and a mixture of Ti(OCH(CH3)2)4 solution with Ni(NO3)2?6H2O powder, respectively. The effect of the ratio between Ni(NO3)2?6H2O powder and Ti(OCH(CH3)2)4 solution (0.5 atm%, 1 atm%, 2 atm%, and 4 atm% of Ni(NO3)2?6H2O) on the efficiency of DSSCs were studied. The surface morphology, crystal structure and optical properties of TiO2 and NiO/TiO2 composite films on FTO and glass substrates were characterized by using field-emission scanning electron microscope (FE-SEM), X-ray diffractometer (XRD), and UV-VIS spectrophotometer, respectively. The FE – SEM images showed that the films were smooth surface and dense when prepared at 200 ℃. The XRD results of TiO2 and NiO/TiO2 composite films on the FTO substrates showed that the TiO2 crystals were anatase phase because the peak at 25.30 corresponds to (101) planes of anatase. The spectrophotometer results showed that the optical transmittance for all samples were about 80%. For the energy conversion efficiency characterization, it was found that the NiO/TiO2 composite films that were prepared from 0.5 atm% of Ni(NO3)2?6H2O solution had the better energy conversion efficiency than TiO2 films.
关键词： NiO/TiO2 composite film,Dye sensitized solar cell,Spray pyrolysis technique
更新于2025-09-23 15:21:01
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Electrical Properties of Pure NiO and NiO:Ag Thin Films Prepared by Pulsed Laser Deposition
摘要： The electrical properties of pure NiO and NiO:Ag films which are deposited on glass substrate with various dopant concentrations (1wt%, 2wt%, 3wt% and 4wt%) at room temperature and 450 °C annealing temperature will be presented. Further, the structural properties were investigated by X-ray diffraction and the surface morphology of the deposited samples was examined by SEM. The results of the Hall effect showed that all the films were p-type. Hall mobility decreases while both carrier concentration and conductivity increase with the increasing of annealing temperatures and doping percentage, Thus, the behavior of semiconductor, and also the DC conductivity from which the activation energy decreases with the doping concentration increase and transport mechanism of the charge carriers can be estimated.
关键词： Hall effect,Electrical conductivity,NiO:Ag thin films,Pulsed laser deposition
更新于2025-09-23 15:19:57
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Combustion-processed NiO/ALD TiO2 bilayer as a novel low-temperature electron transporting material for efficient all-inorganic CsPbIBr2 solar cell
摘要： Low-temperature ALD TiO2 electron transporting layers (ETLs) are promising for all-inorganic perovskite solar cells (PSCs), such as the CsPbIBr2-based ones. However, the non-ideal interfacial level-alignment between ALD TiO2 and CsPbIBr2, as well as the concomitant defects in ALD TiO2 during preparation of upper CsPbIBr2 film severely limit the performance of final PSC. We report herein a new design of ETL by combining ALD TiO2 with low-temperature combustion-processed NiO. Although the underlying NiO layer has a p-type conductivity and is known as a hole transporting layer (HTL), the NiO/ALD TiO2 bilayer can serve as an ETL with fewer traps, larger conduction band minimum (CBM) offset with CsPbIBr2 film, along with the similar optical transmittance, in contrast with individual ALD TiO2 ETL. Consequently, the resulting optimized CsPbIBr2 PSC yields the superior efficiency of 9.71% and photovoltage of 1.272 V, both of which exceed those of the one based on individual ALD TiO2 ETL and even so-gel TiO2 ETL. Our work verifies the great applicability of NiO/ALD TiO2 ETL for CsPbIBr2 PSC and thereby explores a promising way to develop more low-temperature ETLs by combining conventional HTLs with ALD TiO2 layers.
关键词： NiO/TiO2 bilayer,ALD,Low temperature,All-inorganic CsPbIBr2 solar cells,Solution combustion,Electron transporting material
更新于2025-09-23 15:19:57
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A high-sensitivity, fast-response, rapid-recovery UV photodetector based on p-GaN/NiO nanostructures/n-GaN sandwich structure
摘要： A high-performance p-GaN/NiO nanostructures/n-GaN ultraviolet (UV) sandwich structure photodetector was fabricated that was composed of NiO nanostructures grown on n-GaN and a p-GaN film layer. The device based on the GaN p-GaN/NiO nanostructures/n-GaN sandwich structure showed a high responsivity and fast response. This study provides a method to fabricate high-response UV photodetectors for GaN-based materials by combining them with metal oxide nanostructures.
关键词： Sandwich structure,GaN,NiO,Photodetector
更新于2025-09-23 15:19:57
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One-step fabrication of 1D p-NiO nanowire/n-Si heterojunction: development of self-powered ultraviolet photodetector
摘要： Even though there are reports on NiO-p/Si-n based photodetector, work along 1D NiO/Si self-powered photodetector remains unexplored. 1D materials offer better electron mobility and can provide ballistic transport channel, which helps in achieving high responsivity. In this work, direct single-step deposition of p-type NiO nanowires on n-type Si as a self-powered photodetector was successfully fabricated by engaging simple electrospinning technique. The structural properties as observed from XRD indicate highly crystalline NiO nanowires and FESEM images revealed 60 ~75 nm diameter with uniform distribution. Growth of nanowires by using stimuli polymer and its completely removal at high temperature was confirmed using TGA and XPS analysis. The responsivity of the fabricated photodetector was calculated to be 9.1 mA W-1 at zero bias, which can be attributed to the p-type NiO interface with the n-type Silicon, which creates an internal electrical field thereby assisting in the effective separation of the photogenerated carriers. Further, under illumination, at zero bias, the photogenerated current still exists suggesting a generation of internal voltage, which makes the fabricated device as self-powered. This fabrication method will enhance the photodetection properties, and it can be implemented in the fields of optoelectronic devices, sensors, and flexible electronics.
关键词： Electrospinning,NiO nanowires,1D material,Self-powered photodetector
更新于2025-09-23 15:19:57
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Outstanding Photocurrent Density and IPCE of Liquida??State NiO Perovskitea??Sensitized Solar Cells
摘要： The efficiency and photocurrent density reported for a p-type sensitized solar cells up to now are still lagging behind that of the n-type counterparts, limiting the successful development of p-n tandem cells. To circumvent this issue, NiO thin film is fabricated by aerosol-assisted chemical vapour deposition (AACVD) technique and employed in p-type solar cells. A systematic study is conducted to comprehend the correlation between the NiO thickness and the power conversion efficiency (PCE) of liquid-state NiO-based sensitized solar cells. By carefully designing the cell components, this type of device demonstrates the highest photocurrent density (Jsc) exceeding 18 mA cm-2 when using iodine/triiodide as redox shuttle matching the one produced by TiO2 counterpart. This is accomplished by (1)using AACVD technique for one-step deposition of compact and mesoporous NiO electrodes, (2)optimizing the thickness of NiO layer through controlling the deposition time and (3)adopting methylammonium lead iodide (CH3NH3PbI3) as a light harvester prepared via a sequential deposition method.
关键词： aerosol-assisted chemical vapour deposition,photovoltaics,NiO,perovskite
更新于2025-09-23 15:19:57
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Performance enhancement of CIGS thin-film solar cells with a functional-window NiO thin layer
摘要： Cu(In1-χGaχ)Se2 (CIGS) films have been considered as promising materials for solar cell applications owing to high absorption coefficient, bandgap grading, flexibility, and high conversion efficiency. In particular, the bandgap grading has been widely researched as a back surface field effect to reduce the carrier recombination. Recently, the front surface field has been researched by the application of a transition metal oxide (TMO) to increase the power conversion efficiency (PCE). Among them, NiO is an outstanding TMO layer because of its wide bandgap (~3.7 eV), stable cubic structure, the low electron affinity of 1.33~1.85 eV and p-type characteristics. Consequently, the application of the NiO layer has been researched on the CIGS solar cells as an effective electron blocking barrier, which is to suppress the carrier recombination. Even though much research has proceeded on the versatile properties of the NiO, there is rarely research to apply the NiO layer on the CIGS solar cells yet. In this study, we introduced the application of NiO layer deposition on the CIGS solar cell to improve the PCE. The NiO layer (20nm) was deposited on the CIGS solar cell using the E-beam evaporator system at room temperature. We investigated the effect of the application of the p-NiO layer on the CIGS solar cells, comparing the efficiencies and dark J-V curves. These results are in good agreement with time-resolved photoluminescence measurements on the carrier lifetime. The PCE of the device with the p-NiO layer was measured as 16.35 % and the PCE of the device without the p-NiO layer was measured as 15.81 %. After the application of the p-NiO layer, we gained the improvement with 0.54 % of the PCE.
关键词： CIGS,transition metal oxide,solar cell,NiO,thin film,functional layer
更新于2025-09-23 15:19:57
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Self-Aligned Hierarchical ZnO Nanorod/NiO Nanosheet Arrays for High Photon Extraction Efficiency of GaN-Based Photonic Emitter
摘要： Advancements in nanotechnology have facilitated the increased use of ZnO nanostructures. In particular, hierarchical and core–shell nanostructures, providing a graded refractive index change, have recently been applied to enhance the photon extraction e?ciency of photonic emitters. In this study, we demonstrate self-aligned hierarchical ZnO nanorod (ZNR)/NiO nanosheet arrays on a conventional photonic emitter (C-emitter) with a wavelength of 430 nm. These hierarchical nanostructures were synthesized through a two-step hydrothermal process at low temperature, and their optical output power was approximately 17% higher than that of ZNR arrays on a C-emitter and two times higher than that of a C-emitter. These results are due to the graded index change in refractive index from the GaN layer inside the device toward the outside as well as decreases in the total internal re?ection and Fresnel re?ection of the photonic emitter.
关键词： ZnO nanorod/NiO nanosheet,photon extraction e?ciency,photonic emitter,self-align,hierarchical nanostructures
更新于2025-09-23 15:19:57
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A facile route of preparing nickel(II) oxide thin films for high-performance inverted perovskite solar cells
摘要： Perovskite solar cells (PSCs) have been very popular in the field of photovoltaics. In the inverted PSC structure, the hole transport layer deposited before perovskite photoactive layer plays a crucial role in power conversion efficiencies (PCE) and ambient stability of device. Here, we developed a facile method of preparing NiO hole transport layers aided by polymethyl methacrylate (PMMA) for inverted perovskite solar cells. Compared with reported fabrication methods, this route has the advantages of simple, low temperature, and low-cost processing. The corresponding devices exhibited a champion power conversion efficiency (PCE) of 17.78% and good stability. Various characterizations, XRD, Raman, AFM, SEM, PL etc were carried out to confirm the superior effect of the NiO film prepared by new method. We believe that this facile route will be a significant contribution for preparing high performance inverted perovskite solar cells.
关键词： NiO hole transport layers,Perovskite solar cells,low-temperature processing,PMMA,power conversion efficiency
更新于2025-09-23 15:19:57