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Enhanced Interface Characteristics of PA-ALD HfO <sub/>x</sub> N <sub/>y</sub> /InGaAs MOSCAPs Using IPA Oxygen Reactant and Cyclic N <sub/>2</sub> Plasma
摘要： This letter reports high-quality plasma-assisted atomic-layer-deposited HfOxNy by using isopropyl alcohol (IPA) oxidant and cyclic N2 plasma treatment demonstrated on n-type In0.53Ga0.47As. Improved interface characteristics, with suppressed frequency dispersion and surface oxidation, were demonstrated and resulted in significantly decreased interface trap density (Dit) of 4.5 × 1011 eV?1cm?2 at the mid-gap level with outstanding inversion behaviors. In addition, to verify true inversion, transition frequency (ωm) of 4 kHz was extracted. The improvement mechanism of the proposed technology is assumed to be that nitrogen plasma reduces oxygen vacancies that act as oxygen diffusion paths and with the use of IPA oxidant the interface would be strongly protected during pre- and post-dielectric deposition.
关键词： IPA oxidant,inversion,nitridation,Hafnium oxintride,InGaAs MOS
更新于2025-09-10 09:29:36
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Optimizing the Synthesis of Zinc-rich Gallium Zinc Oxynitrides by Combining Co-Precipitation and Moisture-Assisted Nitridation
摘要： ZnO-co-doped GaN is a promising catalyst for photocatalytic overall water splitting in the visible light range. The conventional high-temperature synthesis has the drawback that only low amounts of Zn2+ ions can be incorporated into the GaN:ZnO matrix due to a substantial loss of volatile Zn metal during the nitridation of the binary oxides in flowing NH3. By applying moisture-assisted nitridation of a co-precipitated GaZn precursor under milder conditions it was possible to significantly reduce the Zn loss during nitridation. Using a GaZn precursor with a high Zn content, GaN:ZnO nanoparticles containing high amounts of Zn were obtained. The bandgap was found to decrease nearly linearly with increasing Zn content. Concomitantly, the defect density and structural disorder increased with increasing Zn content.
关键词： Gallium zinc oxynitride,UV/Vis spectroscopy,Co-precipitation,Nitridation,Raman spectroscopy
更新于2025-09-04 15:30:14
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Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy
摘要： The results of investigations of the effect of the initial conditions (nitridation of the Si(111) substrate, the GaN growth temperature, and the stoichiometry of GaN growth) on the growth kinetics and the GaN/Si(111)-layer polarity under nitrogen-plasma-assisted molecular-beam epitaxy are presented. It is experimentally established that the optimal initial condition for GaN epitaxy on Si(111) substrates is high-temperature nitridation of the Si(111) substrate carried out immediately before GaN growth. It is shown that it is possible to control the polarity of GaN by means of appropriate choice of the growth under conditions with N or Ga enrichment at the initial stage of GaN/Si(111) epitaxy.
关键词： GaN,polarity,Si(111),nitridation,molecular-beam epitaxy
更新于2025-09-04 15:30:14