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Label-free immunosensors based on a novel multi-amplification signal strategy of TiO2-NGO/Au@Pd hetero-nanostructures
摘要： A label-free electrochemical immunosensor for quantitative detection of human epididymis specific protein 4 antigen (HE4 Ag) was developed by a novel multi-amplification signal system. The multi-amplification signal system was formed by loading bimetallic Au@Pd holothurian-shaped nanoparticles (Au@Pd HSs) on titanium oxide nanoclusters functionalized nitrogen-doped reduced graphene oxide (TiO2-NGO). The Au@Pd HSs were obtained via seed-mediated approach with in-situ grown palladium nanoarms on gold nanorods (Au NRs) surfaces, which possessed good electrocatalysis for hydrogen peroxide (H2O2) reduction and excellent biocompatibility. The TiO2-NGO with the high catalytic activity and large specific surface area was synthesized by hydrothermal method. Using H2O2 as an electrochemically active substrate, the prepared label-free electrochemical immunosensor based on the TiO2-NGO/Au@Pd HSs hetero-nanostructures as the signal amplification platform exhibited excellent selectivity, reproducibility and stability for the detection of HE4 Ag. Meanwhile, the linear range from 40 fM to 60 nM with the detection limit of 13.33 fM (S/N = 3) was obtained, indicating the immunosensor offers a promising method for clinical detection of HE4 Ag.
关键词： Au@Pd nanoparticles,Titanium oxide,Label-free electrochemical immunosensor,Nitrogen-doped reduced graphene oxide,Human epididymis specific protein 4
更新于2025-09-23 15:23:52
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Wafer-scale Fabrication of Nitrogen-doped Reduced Graphene Oxide with Enhanced Quaternary-N for High-Performance Photodetection
摘要： We demonstrated a simple and scalable fabrication route of nitrogen-doped reduced graphene oxide (N-rGO) photodetector on 8-inch wafer-scale. The N-rGO was prepared through in-situ plasma-treatment in an acetylene-ammonia atmosphere to achieve n-type semiconductor with substantial formation of quaternary-N substituted into the graphene lattice. The morphology, structural, chemical composition and electrical properties of the N-rGO was carefully characterized and being used for the device fabrication. The N-rGO devices were fabricated in a simple metal-semiconductor-metal (MSM) structure with unconventional metal-on-bottom configuration to promote high-performance photodetection. The N-rGO devices exhibited enhanced photoresponsivity as high as 0.68 A W?1 at 1.0 V, which is about two orders of magnitude higher compared to a pristine graphene and wide-band photo-induced response from visible to near-infrared (NIR) region with increasing sensitivity in the order of 785 nm, 632.8 nm and 473 nm excitation wavelengths. We also further demonstrated a symmetric characteristic of photo-induced response to any position of local laser excitation with respect to the electrodes. The excellent features of wafer-scale N-rGO devices suggest a promising route to merge the current silicon technology and two-dimensional materials for future optoelectronic devices.
关键词： photodetector,plasma treatment,quaternary-N,wafer-scale fabrication,Nitrogen-doped reduced graphene oxide
更新于2025-09-23 15:23:52