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Polyelectrolyte Dielectrics for Flexible Low-Voltage Organic Thin-Film Transistors in Highly Sensitive Pressure Sensing
摘要： Organic thin-film transistors (OTFTs) can provide an effective platform to develop flexible pressure sensors in wearable electronics due to their good signal amplification function. However, it is particularly difficult to realize OTFT-based pressure sensors with both low-voltage operation and high sensitivity. Here, controllable polyelectrolyte composites based on poly(ethylene glycol) (PEG) and polyacrylic acid (PAA) are developed as a type of high-capacitance dielectrics for flexible OTFTs and ultrasensitive pressure sensors with sub-1 V operation. Flexible OTFTs using the PAA:PEG dielectrics show good universality and greatly enhanced electrical performance under a much smaller operating voltage of ?0.7 V than those with a pristine PAA dielectric. The low-voltage OTFTs also exhibit excellent flexibility and bending stability under various bending radii and long cycles. Flexible OTFT-based pressure sensors with low-voltage operation and superhigh sensitivity are demonstrated by using a suspended semiconductor/dielectric/gate structure in combination with the PAA:PEG dielectric. The sensors deliver a record high sensitivity of 452.7 kPa?1 under a low-voltage of ?0.7 V, and excellent operating stability over 5000 cycles. The OTFT sensors can be built into a wearable sensor array for spatial pressure mapping, which shows a bright potential in flexible electronics such as wearable devices and smart skins.
关键词： composite materials,organic field-effect transistors,flexible electronics,pressure sensors,dielectrics
更新于2025-09-10 09:29:36
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A Global Parameters Extraction Technique to Model Organic Field Effect Transistors Output Characteristics
摘要： After an impressive improvement observed in organic field effect transistors (OFETs) technology, there is a need to have a comprehensive model, which can predict output characteristics of OFETs to facilitate device-to-system integration in an efficient manner. In this paper, a global technique is developed to extract parameters of various OFETs models by evaluating their output characteristics. By involving respective model’s expression, a simulator has been developed wherein the model variables have been extracted by using particle swarm optimization technique. Relative performance of a model is determined by assessing root mean square errors between the experimental and the modeled characteristics. Swarm optimization showed that the accuracy of a model is dependent upon the device dimensions. Thus, by employing the developed swarm optimization technique on devices of various dimensions, a preferred model is identified, which can be employed by the device modeling software. Swarm optimization showed that models, which are more physics based have a wider applicability than those which involved relatively higher number of fitting variables.
关键词： Modeling,Swarm Optimization,I ? V Characteristics,Organic Field Effect Transistors
更新于2025-09-10 09:29:36
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The Role of Weak Molecular Dopants in Enhancing the Performance of Solution-Processed Organic Field-Effect Transistors
摘要： Molecular doping is an effective method to enhance the charge carrier density for reducing the contact resistance and improving the charge mobility in organic field-effect transistors (OFETs). Previous reports mainly focus on the strong dopants with the EAdopant > IEOSC (p-type) or IEdopant < EAOSC (n-type) to enable the efficient charge transfer (EA: electron affinity; IE: ionization energy; OSC: organic semiconductor). However, the effects of weak dopants on the OFET performance of OSC are rarely investigated. Thus, in this study, it is demonstrated that two new fluorinated compounds (Tetrafluorophthalonitrile (TFP) and Octafluoronaphthalene (OFN)) can act as weak dopants in thin film of TIPS-Pentacene (TIPS). Although they exhibit unmatched EAs (3.45 eV for TFP and 3.44 eV for OFN) compared to the IE (5.17 eV) of the host TIPS, they still can fulfill the p-type doping with the OSC matrix. Systematic structural and electrical characterization reveals the important role of the formed charge-transfer interaction and the improved crystallinity in enhancing the carrier mobility. The doped poly(3-hexylthiophene) is also investigated to confirm the universality of the weak dopants. The study should provide a new thought for the exploitation of novel planar soluble weak dopants in OFETs.
关键词： solution-processed organic field-effect transistors,molecular doping,weak dopants
更新于2025-09-09 09:28:46
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Structural basis for a naphthyl end-capped oligothiophene with embedded metallic nanoparticles for organic field-effect transistors
摘要： We report on the apparent structure of 5,500-bis(naphth-2-yl)-2,20:50,200-terthiophene (NaT3) in organic field-effect transistors (OFETs) with and without embedded silver nanoparticles. Using regular- and microbeam grazing incidence wide- and small-angle X-ray scattering, the device structure is characterized locally in the area with the embedded particles. The NaT3 thin film order is reduced and the found unit cell (a ? 25.7 A? , b ? 5.87 A? , c ? 8.03 A? , and b ? 98.9(cid:2)) differs significantly from the one reported in the bulk, but shows no significant change, when the particles corresponding to the crystal size are incorporated into the device structure. At the same time, the apparent thin film crystal sizes in OFETs are found to be similar with and without the embedded particles. In both cases, the carrier mobilities are of the order of 10(cid:3)4 cm2/(V s).
关键词： X-ray scattering,oligothiophene,organic field-effect transistors,silver nanoparticles,crystal structure
更新于2025-09-04 15:30:14