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oe1(光电查) - 科学论文

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出版时间
  • 2014
研究主题
  • passively mode-locked
  • master oscillator power amplifier
  • lasers
  • ytterbium-doped fiber
应用领域
  • Optoelectronic Information Science and Engineering
机构单位
  • Beijing University of Technology
126 条数据
?? 中文（中国） ▾

  • Active ring resonance cavity assisted single-mode all-optical microwave oscillator

    摘要： A pure optical microwave oscillator with single mode oscillation is proposed and demonstrated. This system has no any electrical microwave devices as well as electro-optic (E/O) and opto-electronic (O/E) conversion. The oscillation frequency is chosen by Brillouin-selective sideband amplification, and the optical envelope detection and feedback modulation are implemented by a semiconductor optical amplifier (SOA). As a high-Q tunable optical comb filter, an active ring resonance cavity (ARRC) is employed to select one oscillation mode within the Brillouin gain region, and consequently a single mode oscillation signal can be generated. In the experiment, a single mode photonic microwave signal with frequency of 10.83 GHz and side-mode suppression ratio of 48 dB is obtained. The measured phase noise is ?88 dBc/Hz@10 kHz. In addition, the tunability is also demonstrated by adjusting the wavelength of the light source.

    关键词： Microwave photonics,SBS,All-optical microwave oscillator

    更新于2025-11-28 14:23:57

  • Low-phase noise 8.22 GHz GaN HEMT oscillator using a feedback multi-path transformer

    摘要： This article designs a low-phase noise 8.22 GHz GaN high electron-mobility transistor (HEMT) oscillator in the WIN 0.25 μm GaN HEMT process. The oscillator uses a HEMT amplifier with a transformer as the feedback network. The transformer uses a 3-path secondary inductor and a single-path primary inductor. The GaN oscillator consumes the power 4.328 mW and generates a signal at 8.22 GHz with an output power ?11.35 dBm. At 1 MHz frequency offset from the carrier at 8.22 GHz the phase noise is ?120.82 dBc/Hz, the figure of merit of the proposed oscillator is ?192.76 dBc/Hz. The oscillator chip occupies an area of 2 × 1 mm2.

    关键词： phase noise,3-path transformer,figure of merit,Q-factor,8.22 GHz GaN HEMT oscillator

    更新于2025-09-23 15:23:52

  • The Implementation of Fundamental Digital Circuits With ITO-Stabilized ZnO TFTs for Transparent Electronics

    摘要： In this paper, several fundamental pseudo-CMOS digital circuits with n-type indium tin oxide-stabilized ZnO thin-film transistors (TFTs) were implemented and investigated. The optical transmittance of circuits varied from 77% to 92% throughout the visible wavelength band. Electrically, the operation frequency of inverters, nor gates, nand gates, D latches, and D flip flops were all found to exceed 10 kHz with a supply voltage of 10 V. Besides, 13-stage ring oscillators could be operated at 42 kHz with a propagation delay time of 0.92 μs when the supply voltage was set as 20 V. Among the state-of-the-art transparent designs, these proposed circuits based on the ITO-stabilized ZnO TFTs exhibited high-speed performance, which were promising as building blocks for transparent electronics with moderate frequency requirements.

    关键词： transparent electronics,Digital circuits,indium tin oxide-stabilized ZnO,thin-film transistors (TFTs),ring oscillator (RO)

    更新于2025-09-23 15:22:29

  • [IEEE 2018 International Flexible Electronics Technology Conference (IFETC) - Ottawa, ON, Canada (2018.8.7-2018.8.9)] 2018 International Flexible Electronics Technology Conference (IFETC) - A Comparitive Study of On-Chip Clock Generators Using a-IGZO TFTs for Flexible Electronic Systems

    摘要： This paper presents a comparitive study of ring oscillators (RO) using amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs) to implement on-chip clock generator for flexible electronic systems. A five-stage RO has been implemented with different inverter topologies using IGZO TFTs, which includes Diode connected load, Capacitive bootstrapping (BS), Pseudo-CMOS and Pseudo-CMOS bootstrapping architectures. These topologies have been simulated using in-house IGZO TFT models under similar conditions using different power supplies (10 V, 15 V and 20 V) in cadence environment. Among all architechtures Capacitive bootstrapping RO has ensured highest frequency of operation in the order of MHz and an output swing of 82% of VDD. Whereas, Pseudo-CMOS based RO provides the lowest power consumption in the order of μW with an output swing of 57% of VDD. On the other hand, the combination of Pseudo CMOS and bootstrapping has ensured highest voltage swing of 95% of VDD. In terms of power delay product (PDP) BS RO is superior with respect to other topologies. This work provides a clear insight to the designer to choose a particular topology for given application, mainly for on-chip clock generation for flexible electronic systems based on the requirements.

    关键词： Bootstrapping,Ring Oscillator,Flexible on-chip clock generator,Pseudo-CMOS,a-IGZO TFTs

    更新于2025-09-23 15:22:29

  • [IEEE 2018 International Semiconductor Conference (CAS) - Sinaia (2018.10.10-2018.10.12)] 2018 International Semiconductor Conference (CAS) - Duty Cycle Adjustment for the Low Cost High Frequency Charge/Discharge CMOS Oscillator

    摘要： A new technique for adjusting the duty cycle in low cost 70MHz charge/discharge based oscillator topology is proposed. Added circuitry is optimized in order to maintain the frequency variation of the initial oscillator topology (without duty cycle adjustment) for a supply voltage range between 1.6V and 2V. The circuit uses different bias currents for each stage and it is implemented using Cadence design suite. It features reduces sensitivity to supply voltage range of the output frequency and low duty cycle variation.

    关键词： low voltage,duty cycle,charge/discharge oscillator,bias

    更新于2025-09-23 15:22:29

  • Improvement of the Beam-Wave Interaction Efficiency Based on the Coupling-Slot Configuration in an Extended Interaction Oscillator

    摘要： A method aimed at improving the beam-wave interaction efficiency by changing the coupling slot configuration has been proposed in the study of extended interaction oscillators (EIOs). The dispersion characteristics, coupling coefficient and interaction impedance of the high-frequency structure based on different types of coupling slots have been investigated. Four types of coupled cavity structures with different layouts of the coupling slots have been compared to improve the beam-wave interaction efficiency, so as to analyze the beam-wave interaction and practical applications. In order to determine the improvement of the coupling slot to a coupled cavity circuit in an EIO, we designed four nine-gap EIOs based on the coupled cavity structure with different coupling slot configurations. With different operating frequencies and voltages takes into consideration, beam voltages from 27 to 33 kV have been simulated to achieve the best beam-wave interaction efficiency so that the EIOs are able to work in the 2π mode. The influence of the Rb and the ds on the output power is also taken into consideration. The Rb is the radius of the electron beam, and the ds is the width of the coupling slot. The simulation results indicate that a single-slot-type EIO has the best beam-wave interaction efficiency. Its maximum output power is 2.8 kW and the efficiency is 18% when the operating voltage is 31 kV and electric current is 0.5 A. The output powers of these four EIOs that were designed for comparison are not less than 1.7 kW. The improved coupling-slot configurations enables the extended interaction oscillator to meet the different engineering requirements better.

    关键词： Output power,Coupling slot configuration,Extended interaction oscillator,Beam-wave interaction efficiency

    更新于2025-09-23 15:22:29

  • On-line estimation of local oscillator noise and optimisation of servo parameters in atomic clocks

    摘要： For atomic frequency standards in which fluctuations of the local oscillator (LO) frequency are the dominant noise source, we examine the role of the the servo algorithm that predicts and corrects these frequency fluctuations. We derive the optimal linear prediction algorithm, showing how to measure the relevant spectral properties of the noise and optimise servo parameters while the standard is running, using only the atomic error signal. We find that, for realistic LO noise spectra, a conventional integrating servo with a properly chosen gain performs nearly as well as the optimal linear predictor. Using simple analytical models and numerical simulations, we establish optimum probe times as a function of clock atom number and of the dominant noise type in the local oscillator. We calculate the resulting LO-dependent scaling of achievable clock stability with atom number for product states as well as for maximally-correlated states.

    关键词： quantum projection noise,servo optimisation,local oscillator noise,atomic frequency standards

    更新于2025-09-23 15:22:29

  • [IEEE 2018 IEEE International Conference on Semiconductor Electronics (ICSE) - Kuala Lumpur (2018.8.15-2018.8.17)] 2018 IEEE International Conference on Semiconductor Electronics (ICSE) - Capacitance Effects of Ring Oscillator's Waveform Quality in Designing Physically Unclonable Functions

    摘要： The paper discusses the effect of capacitance changes on the ring oscillator to its output wave for a physically unclonable function (PUF) application. The wave quality generated by the ring oscillator (RO) will largely determine the response of PUF. We have analyzed the resulting RO waveforms to determine the capacitor values and the ideal number of RO stages. The peak voltage analysis of the capacitance change has been done with the help of the Mentor Graphics software package. High performance PTM model transistors (16nm, 22nm, 32nm, and 45nm technologies) are selected to form the RO circuit. Based on the results of the study, we recommend that the number of RO stages is at least 5. Then, we also recommend the ideal capacitance value as a compromise between quality and delay. The capacitances should be 0.7fF, 0.8fF, 0.9fF, and 1fF for 16nm, 22nm, 32nm, and 45nm technologies, respectively.

    关键词： PUF,square wave,ring oscillator,peak voltage,challenge time

    更新于2025-09-23 15:22:29

  • [IEEE 2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM) - Shanghai, China (2018.11.24-2018.11.26)] 2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM) - A Novel LC VCO with High Output Power and Low Phase Noise Using Differential Active Inductor

    摘要： This paper presents a novel LC voltage-controlled-oscillator (VCO) based on active inductor (AI). Taking advantage of equivalent RLC model of the AI, a novel tunable differential AI (DAI) is designed and used to act as the LC tank of the VCO. First, a tunable DAI with cascode-structure and current-mirror feedback networks is designed to achieve high quality factor (Q) and high equivalent parallel resistance (Rp). Then, the DAI is used to replace LC in VCO to realize good comprehensive performance of VCO such as low phase noise, low power consumption and high output power. Based on TSMC 0.18μm RF CMOS process, the novel VCO is verified by Agilent’s Advanced Design System (ADS). The results show that under the supply voltage of 1.8V, the output power reaches up to -4.2 dBm, a frequency tuning range is in 1.126-2.713 GHz, and the phase noise at 1-MHz offset is -117.2 dBc/Hz. A power of only 13.6 mW is consumed.

    关键词： power consumption,output power,phase noise,LC voltage-controlled-oscillator,active inductor

    更新于2025-09-23 15:22:29

  • Silicon Nitride MOMS Oscillator for Room Temperature Quantum Optomechanics

    摘要： Optomechanical SiN nano-oscillators in high-finesse Fabry–Perot cavities can be used to investigate the interaction between mechanical and optical degree of freedom for ultra-sensitive metrology and fundamental quantum mechanical studies. In this paper, we present a nano-oscillator made of a high-stress round-shaped SiN membrane with an integrated on-chip 3-D acoustic shield properly designed to reduce mechanical losses. This oscillator works in the range of 200 kHz to 5 MHz and features a mechanical quality factor of Q ≈ 107 and a Q-frequency product in excess of 6.2 × 1012 Hz at room temperature, fulfilling the minimum requirement for quantum ground-state cooling of the oscillator in an optomechanical cavity. The device is obtained by MEMS deep reactive-ion etching (DRIE) bulk micromachining with a two-side silicon processing on a silicon-on-insulator wafer. The microfabrication process is quite flexible such that additional layers could be deposited over the SiN membrane before the DRIE steps, if required for a sensing application. Therefore, such oscillator is a promising candidate for quantum sensing applications in the context of the emerging field of quantum technologies.

    关键词： reactive ion etching,MOMS oscillator,quantum optomechanics,SiN thin membrane

    更新于2025-09-23 15:21:21