[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Bi-Junction Carrier Depletion Type Electro-Optic Phase-Shifters

摘要： Silicon photonic integrated circuits (PICs) combine dense optical system integration with industrial scalability by adopting well-established CMOS fabrication processes. An electro-optic phaseshifter (EOP) represents a basic building unit of several PICs applications, including datacom optical switches, PIC-FPGAs, and beam steering. In-situ resistive-heaters in close vicinity of waveguides, or free-carrier injection/depletion in doped junctions, are common methods to build EOPs. Literature reports thermal shifters consuming 24.7 mW to achieve DC large signal π-phaseshift, power consumption of injection PIN implementations and depletion PN modulators of 10 mW and ≈ 0 mW respectively. A thermal EOP naturally avoids carrier-induced optical insertion losses (IL), in contrast to a PIN/PN modulator. Thus, thermal and PIN/PN methods trade-off IL with electrical power rather than minimizing both. An EOP of low optical losses and low electrical power is highly desired in large-signal, and low-speed applications.