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oe1(光电查) - 科学论文

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  • [IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Quantification of spectral losses of Natural soiling and detailed microstructural analysis of Dust collected from Different locations in Dubai, UAE

    摘要: We report the development of multistrata subsurface laser-modified microstructure with backgrind-assisted controlled fracture for defect-free ultrathin die fabrication. We study the microstructural properties and formation mechanisms of the subsurface Si dislocation belt layer with respect to laser scanning speed, pulse laser energies, and interstrata distances. We optimize and exploit the multistrata interactions between generated thermal shock waves and the preceding dislocation belt layers formed to initiate frontal crack fractures that separate out the individual dies from within the interior of the wafer. A new partial-SD before grinding (p-SDBG) integration scheme based upon the tandem use of three-strata SD for controlled crack fracture toward the frontside of the wafer followed by static loading from backgrinding to complete full kerf separation is demonstrated. The optimized three-strata SD process and p-SDBG integration scheme can be used to compensate for the high backside reflectance wafers to produce defect-free eight die stacks of 25-μm-thick mechanically and 46-μm-thick electrically functional 2-D NAND memory dies.

    关键词: laser,semiconductor device packaging,semiconductor memory,Defects,wafer dicing,semiconductor device manufacture

    更新于2025-09-19 17:13:59

  • [IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - The Luminescent Down Shifting Effect of Single-Junction GaAs Solar Cell with Perovskite Quantum Dots

    摘要: We present a method for quantifying a risk for killer defects at layer level and estimating yield for substrate packages using information from design ?les. To calculate risk ranks and predicted yield, we de?ne a risk distance that is a key parameter extracted from designs using image processing techniques. In order to validate our model, we analyze two different designs, each having multiple layers, and compare with data from baseline lots. It is shown that there is an inverse correlation between risk layer ranks and yield. Estimated yield based on our model is compared with baseline yield for four layers of the second design. The model-to-baseline yield difference is less than 1% for three layers we tested.

    关键词: metrology sampling,circuit analysis,assembly,yield estimation,integrated circuit packaging,Yield prediction

    更新于2025-09-19 17:13:59

  • A New Dealcoholization Method in the Synthesis of Vinyl Methyl Phenyl Silicone Resins for LED Encapsulation

    摘要: The oligosiloxane resins were synthesized through hydrolytic sol-gel reaction and remained many hydroxyl groups, which did great harm to the curing process and resulted in poor performance of the cured products. In previous works, epoxy-modified silicone resins were synthesized by dealcoholization, a reaction between 3-glycidoxypropylmethyldimethoxysilane and terminal hydroxyl groups in phenyl silicone resins. Although this method eliminated the hydroxyl groups, it caused a large loss of vinyl groups inevitably and a poor stability of cured products. In this study, methyltrimethoxysilane (MTMS) was used to eliminate hydroxyl groups containing in vinyl methyl phenyl silicone resins, which were synthesized through hydrolytic sol-gel reaction. Most of residual hydroxyl groups were deleted effectively and the great loss of vinyl groups were avoided in the dealcoholization reaction. Then, the methyl phenyl silicone materials were fabricated by hydrosilylation reaction between the synthesized vinyl methyl phenyl silicone resins and hydrogen-containing ones. The cured silicone materials showed excellent optical performance (~ 89.1% at 450 nm) and good adhesion performance. In addition, due to less vinyl loss in the vinyl methyl phenyl silicone resins, the cured methyl phenyl silicone materials exhibited higher cross-linking density, better thermal resistance (5% mass loss at 435 °C) and better mechanical properties (50 shore D) compared with the epoxy-modified phenyl silicone materials. The lumen depreciation (working 168 h at 50 mA) and reflow soldering tests further demonstrated the methyl phenyl silicone materials possessed good thermal stability. These results indicated that the methyl phenyl silicone materials could be used as a LED encapsulant with a good performance.

    关键词: LED packaging,Methyltrimethoxysilane,Non-hydrolytic sol-gel,Hydrolytic sol-gel,Vinyl methyl phenyl silicone resin

    更新于2025-09-19 17:13:59

  • [IEEE 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) - Las Vegas, NV, USA (2019.5.28-2019.5.31)] 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) - Vertical Laser Assisted Bonding for Advanced "3.5D" Chip Packaging

    摘要: In this work the processes of laser assisted bonding (LAB) is compared to thermal compression bonding (TCB). Their respective advantages and disadvantages regarding the assembly of flip chip stacks are compared. It is found, that the LAB allows for faster processing, negligible compression force and creates less internal stress in the chip stack. The concept of “3.5D” stacking is introduced. This new concept allows for the vertical bonding of chips/semiconductors to the sides of a chip stack. The vertically bonded parts can be used to contact the layers, which eliminates the individual necessity for through silicon vias (TSVs).

    关键词: 3D-packaging,Silicon interposer,Thermal compression bonding (TCB),Inter metallic phase (IMC-layer),Laser assisted bonding (LAB),System on Package (SOP),Laser beam modulation,vertical Flip Chip bonding

    更新于2025-09-16 10:30:52

  • [IEEE 2019 21st International Conference on Transparent Optical Networks (ICTON) - Angers, France (2019.7.9-2019.7.13)] 2019 21st International Conference on Transparent Optical Networks (ICTON) - Cavity Resonator Integrated Filter (CRIGF) Based External Cavity Laser in a Butterfly Package

    摘要: Cavity Resonator Grating Filters are narrowband reflective spectral filters that exhibit high efficiency and high angular acceptance, with large optical alignment tolerances. We show that an external cavity diode laser setup with single mode emission can be integrated in a medium size butterfly package using these filters.

    关键词: grating filters,semi-conductor laser,external cavity laser,packaging

    更新于2025-09-16 10:30:52

  • Thermal Impact of LED Chips on Quantum Dots in Remote-Chip and On-Chip Packaging Structures

    摘要: Light-emitting diode (LED) chips in quantum dot (QD)-converted LEDs serve simultaneously as a heat source and a heat sink, but it remains unclear which of these is the major factor that affects the operating temperature of QDs. Here, we investigated the thermal and optical performances of QD-converted LEDs using QD-on-chip and QD-remote-chip packaging structures, to better understand the thermal effect of LED chips on QDs. Our results indicated that the QD-on-chip structure achieved the same optical performance as the QD-remote-chip structure, while the former can save QD usage up to 75.9% owing to the higher absorption probability of QDs closer to the blue source. Most importantly, the QD-on-chip structure largely reduced the maximal surface temperature from 82.7 ?C to 60.2 ?C at 250 mA, and had a longer operating lifetime compared with the QD-remote-chip structure. Simulations revealed that the QD-remote-chip structure could suppress the heat transfer from chips to QDs; however, the hot spot remained in QDs, owing to the heavy conversion loss and low thermal conductivity of the silicone matrix; consequently, the QD-on-chip structure had better heat dissipation (lower temperature) for QDs closer to the chip that served as heat sinks. Therefore, it is suggested to place QDs near the heat sink with high thermal conductivity, such as the LED chip, for heat dissipation; this is better than removing QDs for blocking the heat generated by the LED chip.

    关键词: Light-emitting diodes (LEDs),quantum dot (QD),packaging structure,thermal and optical performance

    更新于2025-09-16 10:30:52

  • Radiant Efficacy Enhancement for Vertical-Cavity Surface-Emitting Laser Devices Using Enhanced Specular Reflection Structures

    摘要: Vertical-cavity surface-emitting laser (VCSEL) devices operate using a variety of viewing angles to satisfy the demands of different applications. One simple and universal approach to accomplish this is by using scattering elements in the packaging process for VCSEL chips. However, inevitable backward scattering loss is introduced, which suppresses the radiant efficacy of VCSEL devices. Therefore, we have proposed an enhanced specular reflection (ESR) structure with an opening circle window (OCW) to recycle the backward scattered light. The ray-tracing method is used to optimize the diameter of the OCW, as well as the thickness of the ESR structure. Furthermore, the light extraction mechanism is discussed. According to theoretical results, VCSEL devices with optimized ESR structures are fabricated and compared with traditional VCSEL devices. The experiment results demonstrate that ESR structures can significantly enhance the radiant efficacy of VCSEL devices using scattering elements. This shows great potential for applications involving illumination and 3-D imaging.

    关键词: vertical-cavity surface-emitting laser (VCSEL),packaging,Enhanced specular reflection (ESR),radiant efficacy,scattering

    更新于2025-09-12 10:27:22

  • [IEEE 2017 21st European Microelectronics and Packaging Conference (EMPC) & Exhibition - Warsaw (2017.9.10-2017.9.13)] 2017 21st European Microelectronics and Packaging Conference (EMPC) & Exhibition - High voltage WireLED powered directly by mains 230 Volts

    摘要: for the need of energy saving, LEDs are taking more and more space in lighting modules. Moreover, LEDs add several applications to the lighting function, smartness, dimming, bio photonic applications, a lot of fields that none former light sources could reach [1]. The manufacturers of course must keep the target of making a device compatible with the standards in terms of safety first, but moreover the compactness and reliability with the well-known thermal issues, depending on the wall plug efficiency of the component. In order to manage all the mentioned points, as often, packaging is the key point if one seeks to maximize the lifetime of a LED based luminaire. Indeed, because they are aware of the existing technologies and comparison thanks to quick information available on the Internet, today’s customers cannot accept to pay a more expensive light source that have lower performance than the former lighting technologies [2]. The paper that we propose describes the manufacturing and the packaging of a LED device made from GaN micro wires compatible with direct mains powering on the 230 Volts-50 Hz network. We show why the heterogeneous stack to manufacture the lighting device, coupled with the high voltage input is a big challenge. Once the front side wire LEDs patterning is finished, many technological steps remain in order to deliver a WLP assembly ready for the back-end assembly process. The carrier bonding, the back side processing for N and P contacts patterning, the hybridization by flip chip technology using copper bumps or solder balls are roughly described with the related issues. Final thermal and electrical characterizations were conducted to evaluate the performances of the high voltage LED device.

    关键词: High voltage,Packaging,Bump,WireLED,IMS,Flip Chip,Trench

    更新于2025-09-12 10:27:22

  • 100 Gbps (4 × 25 Gbps) Optical Receiver Module Packaged in Chip-on-Board Based on Germanium Photodetector

    摘要: 100 Gbps (4 × 25 Gbps) optical receiver (Rx) module is demonstrated using Germanium (Ge) photodetector (PD) which is fabricated through Silicon-photonics process using 750 ohm-cm of high-resistivity silicon oxide insulator (SOI) wafer. Trans-impedance amplifier (TIA) and Ge PD are packaged with chip-on-board (COB) manner on a printed circuit board (PCB). High speed PCB for the assembly of both electronic and photonic devices in COB package is precisely designed from the material selection to the device footprint layout and transmission line design. The layout on PCB is optimized using high frequency simulation tool of HFSS to minimize RF loss happening in the transmission line and electrical interconnection points of bond wires. Electrical-optical (EO) S-parameter measurement for the Ge PD shows 22 GHz of transmittance (S21) 3dB bandwidth. Photocurrents of the photodetector induced by the optical input power are analyzed for signal integrity both TIA ON and OFF states. Photocurrent changes by the misalignment of the lensed optical fiber coupled to the edge coupler of the Ge PD shows that 3dB misalignment tolerances are 5.5 μm in the longitudinal and around +/-1 μm in the lateral directions. This COB packaging technique of optical Rx module can be applied for the integration and assembly of the optical module of higher data rate of 100 Gbps and beyond.

    关键词: GE PD,silicon photonics,Receiver module,COB packaging

    更新于2025-09-12 10:27:22

  • [IEEE 2019 International Workshop on Fiber Optics in Access Networks (FOAN) - Sarajevo, Bosnia and Herzegovina (2019.9.2-2019.9.4)] 2019 International Workshop on Fiber Optics in Access Networks (FOAN) - Concept of PIC Packaging with Microwave, DC and Fiber Array Ports

    摘要: Progress integrated photonics enables development of integrated photonics circuits with new unique properties, circuits of the future, and overcomes current limits in information and communication technologies. The packaging of photonic integrated circuits is necessary for taking them out of research laboratories into real implementation in the information and communication technology applications. Telecom optical fibers are still being the best transmission medium of digital data and analogue signals for long distance applications. The effective coupling of optical radiation between telecom optical fiber with ten microns core dimension and photonic integrated circuits optical waveguides with submicron dimensions are necessary. To address these challenges, we present our concept of photonics integrated circuit packaging with radio frequency, direct current and fiber array ports with automated active alignment system.

    关键词: packaging,photonics integrated circuits,information and communication technology,concept,integrated photonics

    更新于2025-09-12 10:27:22