- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Toward Industrial Exploitation of THz Frequencies: Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems
摘要： A new integration concept for THz systems is presented, wherein patterned silicon-on-insulator wafers form all DC, IF and RF networks in a homogeneous medium, in contrast to existing solutions. Using this concept, silicon-micromachined waveguides are combined with silicon germanium (SiGe) microwave monolithic integrated circuits (MMICs) for the first time. All features of the integration platform lie in the waveguide’s H-plane. Heterogeneous integration of SiGe chips is achieved using a novel in-line H-plane transition. As an initial step towards complete systems, we outline the design, fabrication and assembly of back-to-back transition structures, for use at D-band frequencies (110 – 170 GHz). Special focus is given to the industrial compatibility of all components, fabrication and assembly processes, with an eye on the future commercialisation of THz systems. Prototype devices are assembled via two distinct processes, one of which utilises semi-automated die-bonding tools. Positional and orientation tolerances for each process are quantified. An accuracy of ±3.5 μm, ±1.5?is achieved. Measured S-parameters for each device are presented. The insertion loss of a single-ended transition, largely due to MMIC substrate losses, is 4.2 – 5.5 dB, with a bandwidth of 25 GHz (135 – 160 GHz). Return loss is in excess of 5 dB. Measurements confirm the excellent repeatability of the fabrication and assembly processes and thus their suitability for use in high-volume applications. The proposed integration concept is highly scalable, permitting its usage far into the THz frequency spectrum. This work represents the first stage in the shift to highly-compact, low-cost, volume-manufacturable THz waveguide systems.
关键词： silicon germanium,terahertz,integrated circuit packaging,MMIC,micromachined waveguide
更新于2025-09-12 10:27:22
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[IEEE 2019 IEEE MTT-S International Wireless Symposium (IWS) - Guangzhou, China (2019.5.19-2019.5.22)] 2019 IEEE MTT-S International Wireless Symposium (IWS) - A Self-Packaged Ultra-Wide Band Bandpass Filter Using Integrated Substrate Gap Waveguide
摘要： An ultra-wideband bandpass (UWB) filter using integrated substrate gap waveguide (ISGW) technology is proposed, which has ultra-wideband and high selectivity. The UWB ISGW bandpass filter structure consists of three layer dielectric substrates, the top substrate uses metallic via-holes and metallic patches to implement perfect magnetic conductor (PMC) structure, which is suitable for packaging substrate integrated waveguide (SIW) filters to avoid external interference and loss caused by radiation and internal radiation leakage, the middle layer substrate provides a stable gap layer, and the base substrate is used to obtain a SIW filter by etching the slots in the metal plane and placing metallic via-holes in the middle of the layer, i.e. a self-packaged UWB ISGW filter. The proposed filter was fabricated and tested at a center frequency of 17.5 GHz as an example. The measurements show that the filter has a passband from 14.4 to 20.7 GHz, i.e. This filter has a fractional bandwidth (FBW) of 36%, and an insertion loss of 0.91 dB. More importantly, thanks to ISGW, two transmission zeros are obtained at 12.9 and 22.1 GHz to improve high selectivity.
关键词： packaging,Integrated substrate gap waveguide (ISGW),Bandpass filter (BPF),Ultra-wideband (UWB)
更新于2025-09-12 10:27:22
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[IEEE 2019 3rd International Conference on Circuits, System and Simulation (ICCSS) - Nanjing, China (2019.6.13-2019.6.15)] 2019 3rd International Conference on Circuits, System and Simulation (ICCSS) - A Packaging Method to Improve Monocrystalline Silicon Solar Cells with YAG:Ce Phosphors
摘要： A packaging method to improve the conversion efficiency of monocrystalline silicon solar cells is presented. In this method, Ce-doped yttrium aluminum garnet (YAG:Ce) phosphor particles as luminescence down-shifting materials are coated on the surface of the solar cells which are then packaged with ethylene vinyl acetate (EVA) and glass. The experimental results show that, after being packaged, the increase in the conversion efficiency is from 17.24% to 18.13%. The enhancement can be attributed to the luminescence down-shifting effect of YAG:Ce phosphors which convert ultraviolet/blue light into yellow light, the reduced reflection in the wavelength range below 480nm and the absorption of the light which is emitted from the phosphor particles and reflected back at air/glass interface. This method provides a potential way to improve the solar cells through the packaging processes, which is appliable for industries.
关键词： conversion efficiency,down-shifting,packaging,YAG:Ce phosphors
更新于2025-09-12 10:27:22
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III-V-on-Silicon Integration: From Hybrid Devices to Heterogeneous Photonic Integrated Circuits
摘要： Heterogeneous integration of III-V materials onto silicon photonics has experienced enormous progress in the last few years, setting the groundwork for the implementation of complex on-chip optical systems that go beyond single device performance. Recent advances on the field are expected to impact the next generation of optical communications to attain low power, high efficiency and portable solutions. To accomplish this aim, intense research on hybrid lasers, modulators and photodetectors is being done to implement optical modules and photonic integrated networks with specifications that match the market demands. Similarly, important advances on packaging and thermal management of hybrid photonic integrated circuits (PICs) are currently in progress. In this paper, we report our latest results on hybrid III-V on Si transmitters, receivers and packaged optical modules for high-speed optical communications. In addition, a review of recent advances in this field will be provided for benchmarking purposes.
关键词： III-V on SOI photonic integrated circuits,on-chip silicon transmitters and receivers,lasers,thermal management,silicon photonics packaging
更新于2025-09-11 14:15:04
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[IEEE 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Fukuoka, Japan (2019.7.7-2019.7.11)] 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - An integrated LAN-WDM 400-Gb/s (53Gbaud-PAM4) EML TOSA
摘要： We demonstrated an integrated LAN-WDM 400-Gb/s (53Gbaud-PAM4) EML TOSA. Low power consumption less than 1.3 W between -5 °C and 80 °C was obtained besides the measured TDECQs below 2.45 dB for all lanes.
关键词： Semiconductor lasers,Packaging technology of photonic devices and circuits
更新于2025-09-11 14:15:04
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White LEDs With High Optical Consistency Packaged Using 3D Ceramic Substrate
摘要： Packaging efficiency and optical performances are important indexes for white light-emitting diodes (WLEDs) packaging. In this letter, wafer-level WLEDs packaging were presented by printing phosphor on three-dimensional (3D) ceramic substrate to improve packaging efficiency and optical consistency. The 3D ceramic substrate was prepared by repeatedly electroplating copper cups on the planar direct plated copper (DPC) ceramic substrate. The phosphor concentration was adjusted to realize natural white light. The fabrication errors of the 3D ceramic substrate and the optical performances of WLED modules were analyzed to evaluate the optical consistency of the WLED modules packaged by using 3D ceramic substrate. Consequently, the fabrication errors of 3D ceramic substrate are less than 1%. When the phosphor concentration was set at 12.5 wt%, the packaged LEDs achieve a natural white light with luminous efficiency (LE) of 94.55 lm/W, correlated color temperature (CCT) of 5915 K, and chromaticity coordinate of (0.3166, 0.3345). The WLED modules exhibit small standard deviations in LE (1%), color rendering index (1%), correlated color temperature (98 K), and high reliability. The results indicate that the WLEDs packaged using 3D ceramic substrate have excellent optical consistency.
关键词： direct plated copper (DPC) ceramic substrate,optical performance,White light-emitting diodes (WLEDs),LED packaging,reliability
更新于2025-09-11 14:15:04
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Crafting Interior Holes on Chemically Strengthened Thin Glass Based on Ultrafast Laser Ablation and Thermo-Shock Crack Propagations
摘要： To prevent glass cracking from external mechanical damages, chemically strengthened glass is usually employed. The cutting of strengthened glass becomes critical due to their residual tensile stress induced in the inner core of the display unit of mobile communication and computational devices. This method integrates picosecond laser ablation with quenching induced thermo-shock for accomplishing such a task. Essential analyses are performed based on fracture mechanics and finite element method to provide the scientific basis of such an approach. Experimental results indicate that with a proper temperature control, the proposed method could achieve successful separations for various enclosed shapes with the associated surface roughness satisfying the requirement.
关键词： thermo-shock,Glass,picosecond laser ablation,Packaging
更新于2025-09-11 14:15:04
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Electroplated gold micro studs for thermocompression bonding of UV LED chips
摘要： A bonding technology using electroplated Au micro studs for UV LEDs has been investigated. Au studs with diameter, height, and pitch of about 15 μm, 8 μm, and 30 μm, respectively were electroplated on standard UV LED chips on wafer level. The parameters for the thermocompression bonding (temperature, force, and time) were varied and a critical temperature for bonding was identified. The electroplating process, in particular the plating base, strongly influences the adhesion of the Au micro-studs and therefore the strength of the bond. Electro-optical measurements of bonded UVB LEDs as well as thermal resistance measurements and simulations of the devices show that Au-Au thermocompression bonding, using Au micro studs, can result in devices whose performance is similar to those fabricated using the conventional bonding technology of soldering with Au-Sn paste. Hence, the use of Au micro studs is an interesting alternative for bonding UV LED chips due to the ease of implementation, the stability of the bond, the comparable thermal resistance to Au-Sn, as well as the possibility to realize more complex and smaller chip geometries.
关键词： thermocompression bonding,Light-emitting diode,Semiconductor device packaging
更新于2025-09-11 14:15:04
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Integrated Metamaterial Interfaces for Self-Aligned Fiber-to-Chip Coupling in Volume Manufacturing
摘要： Improving the scalability and cost efficiency of photonic packaging is central to fulfilling the silicon photonic promise of low-cost devices with unprecedented optical complexity. A key enabler towards this goal is an efficient, large-mode, integrated fiber coupler and mode converter. Using standard fiber modes at fiber-to-chip junctions avoids expensive in-fiber mode conversion and relaxes alignment tolerances for low-cost assembly and improved reliability. Metamaterial waveguides, also called subwavelength gratings, are particularly useful for such structures. They provide unmatched design flexibility and, counter-intuitively, are more forgiving to fabrication tolerances than solid-core waveguides. Here, we summarize our work on interfacing self-aligned, standard cleaved fibers to rectangular Si routing waveguides. Fiber V-grooves are integrated on chip with metamaterial converters embedded in suspended oxide membranes to prevent coupler-mode leakage to the substrate. We show optical results from first integration of V-grooves with metamaterial converters to commercial structures fabricated in 300 mm CMOS production facilities. We demonstrate a peak transmission of -0.7 dB on the TE polarization and -1.4 dB on the TM polarization with a respective spectral roll-off of 0.3 and 0.4 dB over the 60 nm bandwidth measured.
关键词： photonic bandgap materials,packaging,optical fiber communication,integrated optoelectronics
更新于2025-09-11 14:15:04
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Bonding-Based Wafer-Level Vacuum Packaging Using Atomic Hydrogen Pre-Treated Cu Bonding Frames
摘要： A novel surface activation technology for Cu-Cu bonding-based wafer-level vacuum packaging using hot-wire-generated atomic hydrogen treatment was developed. Vacuum sealing temperature at 300 ?C was achieved by atomic hydrogen pre-treatment for Cu native oxide reduction, while 350 ?C was needed by the conventional wet chemical oxide reduction procedure. A remote-type hot-wire tool was employed to minimize substrate overheating by thermal emission from the hot-wire. The maximum substrate temperature during the pre-treatment is lower than the temperature of Cu nano-grain re-crystallization, which enhances Cu atomic diffusion during the bonding process. Even after 24 h wafer storage in atmospheric conditions after atomic hydrogen irradiation, low-temperature vacuum sealing was achieved because surface hydrogen species grown by the atomic hydrogen treatment suppressed re-oxidation. Vacuum sealing yield, pressure in the sealed cavity and bonding shear strength by atomic hydrogen pre-treated Cu-Cu bonding are 90%, 5 kPa and 100 MPa, respectively, which are equivalent to conventional Cu-Cu bonding at higher temperature. Leak rate of the bonded device is less than 10?14 Pa m3 s?1 order, which is applicable for practical use. The developed technology can contribute to low-temperature hermetic packaging.
关键词： Cu thermos-compression bonding,atomic hydrogen,wafer-level vacuum packaging,nano-grain,wafer bonding,hot wire
更新于2025-09-10 09:29:36