SET Sensitivity of Tri-Gate Silicon Nanowire Field-Effect Transistors

摘要： The SET response of SOI tri-gate silicon nanowires is investigated using direct measurements of current transients. Resulting collected charge distributions are compared to simulations in two steps: Monte-Carlo simulations of deposited energy and TCAD simulation of collected charge, using detailed description of charge generation. Good agreement with experimental data is obtained. Current simulation tools can thus be used, with minor optimization, to simulate such integrated devices. The analysis of SETs show collected charge values lower than both the charge estimated from the LET and the charge actually generated in the nanowire, revealing a limited sensitivity of nanowire devices to high LET ions.