[IEEE 2018 23rd Opto-Electronics and Communications Conference (OECC) - Jeju Island, Korea (South) (2018.7.2-2018.7.6)] 2018 23rd Opto-Electronics and Communications Conference (OECC) - 2.8?μm infrared photodetectors based on PbSe colloidal quantum dot films

摘要： In this study, we synthesized monodisperse and high purity PbSe CQDs and then demonstrated the photodetectors working at different wavelengths up to 2.8 μm. Colloidal quantum dots (CQDs) have been studied extensively due to their attractive optoelectronic properties such as high luminescence efficiency, large dipole moment, strong light absorption, good photo-stability, and multiple electron hole pair generation. More importantly, the strong quantum confinement effect allows us to tailor the energy band gap of these materials by controlling their size in a cost-effective wet chemical synthesis. These advantages bring CdSe-based CQDs to a competitive market of lighting and display technology today. The research on lead based chalcogenide (PbTe, PbS, and PbSe) CQDs for infrared applications has also received much scientific and technological attention because of the possibility to tune the bandgap in the infrared wavelength range. Among lead based chalcogenide family, lead selenide (PbSe) CQDs have received more attention in not only photodetectors but also many infrared optoelectronic applications like solar cells, light emitting diodes, etc [1-4]. In the present work, we report about high performance photodetectors at a broad spectral range, for the first time, up to 2.8 μm based on our high quality, monodisperse PbSe CQDs. We deposited thin films of synthesized PbSe CQDs on the patterned interdigitated platinum electrodes by a drop casting method to create photodetectors. These photodetectors with different thicknesses of the PbSe CQD film were studied and optimized in detail for the best performance. The photocurrent responses were recorded as a function of bias voltage using infrared LED illuminations with wavelengths of up to 2.8 μm.