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oe1(光电查) - 科学论文

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?? 中文(中国)
  • Synthesis of Silica-Coated Csa??PbBra?? and Csa??Pb(Br0.4I0.6)a?? Quantum Dots With Long Lifetime and Enhancement in Quantum Efficiency for WLEDs Applications: Lightings With High CRI and Displays With Wide Color Gamut

    摘要: To focus on developing white light-emitting diodes (WLEDs) for lightings with high color rendering index (CRI), low correlated color temperature (CCT), and the displays with wide color gamut, inorganic perovskite quantum dots (QDs) such as CsPbX3 (X = Cl, Br, I) were the promising candidate owing to the excellent optoelectronic properties such as high quantum efficiency, narrow emission wavelengths, and tunable emission spectrum. Nevertheless, the CsPbBr3QDs in the form of powders or films had a poor air stability and severe decline of quantum efficiency. Therefore, in this article, a new idea was proposed that 0-D green–red perovskite QDs powders such as Cs4PbBr6 and Cs4Pb(Br0.4I0.6)6 with improved quantum efficiency and long lifetime were first developed by silica-coated method and crystal phase transition in low-temperature synthesis. The quantum efficiency in green Cs4PbBr6 powders could be significantly enhanced from 31.41% to 45.87% and red Cs4Pb(Br0.4I0.6)6 powders was 22.79%. Moreover, the as-prepared perovskite QD powders and commercial YAG phosphors combined with blue chips were applied to high-quality WLEDs for lightings and displays. More importantly, the as-fabricated wide Commission Internationale de l’Eclairage (CIE) color gamut WLEDs for displays possessed 115% National Television System Committee (NTSC) coverage rate and luminous efficiency of 51 lm/W under 20-mA driving current. On the other hand, the constructed WLEDs for high-power lightings would generate a warm white light with a luminous efficiency of 38 lm/W, extremely high CRI of 92.8, and low CCT of 3828 K under 350 mA. Hence, the proposed green–red perovskite QD powders had outstanding potential applications in WLEDs.

    关键词: white light-emitting diodes (WLEDs),0-D perovskite quantum dots (QDs),backlights of displays,solid-state lightings

    更新于2025-09-23 15:21:01

  • Surface Regulation of CsPbBr <sub/>3</sub> Quantum Dots for Standard Blue-Emission with Boosted PLQY

    摘要: It is demonstrated that, via surface treatment of CsPbBr3 perovskite quantum dots (PeQDs) by introducing small amount of organic ammonium chlorides possessing short alkyl chain (C ≤ 4) in methyl acetate in the typical purification process, the emission can be tuned from green to blue region with boosted photoluminescence quantum yield (PLQY). The Cl? mainly works on the surface of PeQDs to fill bromide vacancy, which generates a passivated mixed-halide surface and avoids formation of defects deep within bandgap. Meanwhile, the replacement of initial long-chain ligands with short chain ammonium moiety benefits the film PLQY. Accordingly, a standard blue emission of 461 nm with a high film PLQY of 52% is accessed and the corresponding colloidal shows a PLQY of 80% at 456 nm. This method is also proved to be a versatile tool to boost the PLQY of PeQDs by using short chain ammonium halides bearing the same X with the initial CsPbX3. A near-unity colloidal PLQY of 97% and 98% is achieved for CsPbBr3 and CsPbI3 respectively. Quantum dots light-emitting diode (QLED) with treated CsPbBr3 affords a standard blue electroluminescence of 459 nm and a maximum external quantum efficiency of 0.3%.

    关键词: perovskite quantum dots,vacancy passivation,surface regulation,standard blue emission

    更新于2025-09-23 15:21:01

  • High brightness blue light-emitting diodes based on CsPb(Cl/Br)3 perovskite QDs with phenethylammonium chloridesynonym passivation.

    摘要: All inorganic perovskite quantum dots (QDs) (CsPbX3, X=Cl, Br, I) have been applied on the light-emitting devices (LEDs) in recent years due to their excellent optical and optoelectronic properties. However, the blue-light emitting perovskite QD LEDs (PQD-LEDs) exhibit the poor performances comparing with their green- and red-light emitting counterparts. Herein, we fabricated the high performing blue-light emitting PQD-LEDs based on the phenethylammonium chloridesynonym (PEACl) modified CsPb(Cl/Br)3 QDs. Firstly, the PEA-CsPbCl3 QDs were synthesized by introducing the certain amounts of PEACl in the conventional hot-injection synthesis process. The merit of our synthesis lies in the fact that not only the Cl vacancies of CsPbCl3 QDs are efficiently modified by introducing the PEACl precursor, but also the partial long-chain organic ligands (OLA) capping on the surface of CsPbCl3 QDs are simultaneously replaced by the shorter PEACl chains. Consequently, the PEA-CsPbCl3 QDs emitted at 410 nm with the PLQY of 62.3% was achieved. Furthermore, to meet the requirement of display application, we exchanged Cl- with Br- ions at room temperature to precisely control the blue emission in 460-470 nm spectral regions and with the maximum PLQY of 80.2% at 470 nm. Finally, the PQD-LEDs based on PEA-CsPb(Cl/Br)3 perovskite QDs emitted at 462, 465, 468 and 470 nm were fabricated. The PQD-LEDs exhibit the maximal EQE of 2.15% and luminance of 620 cd/m2, which provides a highest value of luminance for the PQD-LEDs in the blue spectral range that satisfying the practical display application.

    关键词: perovskite quantum dots,LEDs,CsPb(Cl/Br)3,blue-light emitting,phenethylammonium chloride

    更新于2025-09-23 15:21:01

  • Effect of phase transition on SiO2-coated CsPbBr3/Cs4PbBr6 quantum dots: Air-stability and quantum efficiency improvement

    摘要: To develop white light-emitting diodes (WLEDs) with wide color gamut for displays, compared with nitride-based phosphors and traditional core-shell quantum dots (QDs) such as CdSe, InP, CuInS2, all-inorganic perovskite QDs CsPbX3 (X = Cl, Br, I) were more promising luminescent materials due to tunable wavelength, narrow emission spectrum and high quantum efficiency. However, when QDs were made into solid form (powders or films), poor air-stability and drastic decrease of quantum efficiency would be observed in CsPbBr3. These drawbacks would restrict their practical applications. To resolve these issues, in this paper, we proposed a new concept that zero-dimensional perovskite QDs powders Cs4PbBr6 with outstanding quantum efficiency and long lifetime up to three months could be successfully prepared via silica-coated method and crystal phase transition in low-temperature synthesis. This phenomenon of phase transition would be discussed in detail and the quantum efficiency could be improved from 31.41% to 45.87%. Moreover, green LEDs with high color purity of 92% and luminous efficiency of 88.59 lm/W could also be achieved by using this material. Therefore, our proposed perovskite QDs powders Cs4PbBr6 had extreme potential for displays applications.

    关键词: Zero-dimensional perovskite quantum dots,Phase transition mechanisms

    更新于2025-09-23 15:19:57

  • Down-Shifting and Anti-Reflection Effect of CsPbBr3 Quantum Dots/Multicrystalline Silicon Hybrid Structures for Enhanced Photovoltaic Properties

    摘要: Over the past couple of decades, extensive research has been conducted on silicon (Si) based solar cells, whose power conversion e?ciency (PCE) still has limitations because of a mismatched solar spectrum. Recently, a down-shifting e?ect has provided a new way to improve cell performances by converting ultraviolet (UV) photons to visible light. In this work, caesium lead bromide perovskite quantum dots (CsPbBr3 QDs) are synthesized with a uniform size of 10 nm. Exhibiting strong absorption of near UV light and intense photoluminescence (PL) peak at 515 nm, CsPbBr3 QDs show a potential application of the down-shifting e?ect. CsPbBr3 QDs/multicrystalline silicon (mc-Si) hybrid structured solar cells are fabricated and systematically studied. Compared with mc-Si solar cells, CsPbBr3 QDs/mc-Si solar cells have obvious improvement in external quantum e?ciency (EQE) within the wavelength ranges of both 300 to 500 nm and 700 to 1100 nm, which can be attributed to the down-shifting e?ect and the anti-re?ection property of CsPbBr3 QDs through the formation of CsPbBr3 QDs/mc-Si structures. Furthermore, a detailed discussion of contact resistance and interface defects is provided. As a result, the coated CsPbBr3 QDs are optimized to be two layers and the solar cell exhibits a highest PCE of 14.52%.

    关键词: down-shifting e?ect,solar cell,anti-re?ection property,caesium lead bromide perovskite quantum dots (CsPbBr3 QDs),multicrystalline Si (mc-Si)

    更新于2025-09-23 15:19:57

  • Multi-phased cesium lead iodide quantum dots with large stokes shift

    摘要: Lead halide perovskite quantum dots (QDs) have emerged as one of the most promising candidates for lighting and biomedical applications. However, further applications are limited by energy transfer of F?rster resonance energy transfer (FRET) or photon reabsorption between different QDs due to QDs with small Stokes shifts. Here, we first report intrinsic cesium lead iodide QDs with large Stokes shifts from 262 to 289 nm with PL peaks in the range of 630 to 658 nm. We show that the large Stokes shift is attributed to the morphology of QDs with multiple phases. Our results in intrinsic lead iodide perovskite QDs with large Stokes shift may open new avenues in resolving energy transfer in biomedical and lighting applications.

    关键词: Energy transfer,Perovskite quantum dots,Large Stokes shift,Luminescence,Nanocrystalline materials

    更新于2025-09-23 15:19:57

  • Strong Spin-Selective Optical Stark Effect in Lead Halide Perovskite Quantum Dots

    摘要: The optical Stark effect (OSE) stems from a coherent, nonlinear interaction between a transition and a non-resonant light field, which usually causes a blue-shift of the transition energy. This shift can be understood using the picture of so-called photon-dressed states or Floquet states. The perturbation induced by a light filed which is periodical in time results in a series of quasi-static Floquet eigenstates periodically spaced in units of the photon energy. The repulsion (hybridization) between the Floquet and equilibrium states causes a blueshift of the transition between the equilibrium states, as schematically shown in Fig. 1a. The OSE effect is intrinsically helicity-selective, that is, a left circularly polarized light couples only to the |0> to |+1> but not the |0> to |-1> transition and vice versa (the number in the ket is the azimuthal quantum number of the total angular momentum). Experimentally, the OSE can be conveniently observed using circularly polarized transient absorption (TA) spectroscopy. With a co-circularly polarized pump-probe configuration, the probe pulse measures a blue-shifted transition in the duration of the pump pulse and a derivative-like difference spectrum (with respect to the unpumped spectrum) can be detected (Fig. 1b), whereas with a counter-circularly polarized configuration nothing can be detected if multi-photon absorption is negligible.

    关键词: transient absorption spectroscopy,optical Stark effect,spin-selective,lead halide perovskite,quantum dots

    更新于2025-09-23 15:19:57

  • Manufacturing and Characterization on aThree-Dimensional Random Resonator of Porous Silicon/TiO <sub/>2</sub> Nanowires for Continuous Light Pumping Lasing of Perovskite Quantum Dots

    摘要: In recent years, all inorganic bismuth lead-halide perovskite nanocrystals [CsPbX3 (X ? Cl, Br, I)] have received extensive attention due to their high performance in °uorescence quantum yield, narrow emission spectrum, and adjustable emission range. However, the disadvantages of high cost and poor stability have greatly limited the development prospects of the material. Here, in order to develop a perovskite quantum dot lasing cavity with high chemical stability, high quality factor and low fabrication cost, we have successfully fabricated a 3D random cavity device based on porous silicon/TiO2 nanowires. A TiO2 nanowire is grown on the porous silicon to form a 3D resonant cavity, and a perovskite quantum dot is spin-coated on the surface of the 3D resonant cavity to form a novel 3D complex ˉlm. The novel structure enhances the chemical stability and lasing quality factor of the resonant cavity while the °uorescence generated by the large quantum dots in the spatial interference structure constitutes the feedback loop, which will provide favorable support for the development of information optics.

    关键词: porous silicon,Perovskite quantum dots,TiO2,resonators

    更新于2025-09-23 15:19:57

  • Low-threshold stimulated emission in perovskite quantum dots: single-exciton optical gain induced by surface plasmon polaritons at room temperature

    摘要: Colloidal perovskite quantum dots are candidate materials for solution-processable lasers, although stimulated emission in a semiconductor usually occurs in the multiexciton regime. Due to the quantum-confinement effect of semiconductor quantum dots, the non-radiative recombination transition dominates the relaxation of multiexcitons. Hence, the implementation of low-threshold stimulated emission of perovskite quantum dots in the single-exciton regime is meaningful. Herein, we show that this problem can be partially solved by employing a locally enhanced electric field. By applying the metal surface plasmon resonance energy-transfer effect, we demonstrate a considerable reduction of the optical gain threshold due to the newly generated coupling level induced by the local surface plasmon, and obtain optical gain in the single-exciton regime at room temperature in colloidal perovskite quantum dots. At the same time, we achieve a more than fourfold reduction in the amplified spontaneous emission threshold. This may provide a new concept for the further design of low-threshold stimulated emission colloidal nanocrystal lasers and even for improving their energy conversion efficiency.

    关键词: surface plasmon polaritons,stimulated emission,optical gain,room temperature,perovskite quantum dots

    更新于2025-09-23 15:19:57

  • An experimental study on the blinking suppression mechanism of organic-inorganic formamidinium lead halide perovskite quantum dots on N-Type semiconductors

    摘要: Lead halide perovskite has emerged as a potential material for a wide range of applications, including solar cells, light-emitting diode displays, lasing, and single photon emitters. To optimize their utilization in optoelectronic devices, the fundamental photophysical properties, especially their charge carrier transition and blinking behaviors, must be elucidated. In this study, we investigate the blinking behaviors of single formamidinium bromide perovskite quantum dots (FAPbBr3 PQDs) on the n-type TiO2 substrate. It is suggested that the electrons from TiO2 fill the trap states of FAPbBr3 PQD during Fermi-level equilibrium, which can reduce the possibility of capturing the hot electrons from PQD into the trap states. In addition, charge separation and charge recombination processes between PQD and TiO2 are expected to shorten the duration of the OFF state, thus stabilizing the fluorescence of PQDs.

    关键词: optoelectronic devices,TiO2 substrate,charge carrier transition,perovskite quantum dots,blinking suppression

    更新于2025-09-23 15:19:57