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Direct Imaging of Surface Plasmon-Driven Hot Electron Flux on the Au Nanoprism/TiO <sub/>2</sub>
摘要： Direct measurement of hot electron flux from a plasmonic Schottky nanodiode is important for obtaining fundamental insights explaining the mechanism for electronic excitation on a surface. Here, we report the measurement of photo-induced hot electrons on a triangular Au nanoprism on TiO2 under incident light with photoconductive atomic force microscopy (pc-AFM), which is direct proof of the intrinsic relation between hot electrons and localized surface plasmon resonance. We find that the local photocurrent measured on the boundary of the Au nanoprism is higher than that inside the Au nanoprism, indicating that field confinement at the boundary of the Au nanoprism acts as a hot spot, leading to the enhancement of hot electron flow at the boundary. Under incident illumination with a wavelength near the absorption peak (645 nm) of a single Au nanoprism, localized surface plasmon resonance resulted in the generation of a higher photo-induced hot electron flow for the Au nanoprism/TiO2, compared with that at a wavelength of 532 nm. We show that the application of a reverse bias results in a higher photocurrent for the Au nanoprism/TiO2, which is associated with a lowering of the Schottky barrier height caused by the image force. These nanoscale measurements of hot electron flux with pc-AFM indicate efficient photon energy transfer mediated by surface plasmons in hot electron-based energy conversion.
关键词： hot electron,Photoconductive atomic force microscopy,localized surface plasmon resonance,Schottky diode,field confinement,Au nanoprism
更新于2025-09-23 15:23:52
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Self-powered perovskite/CdS heterostructure photodetectors
摘要： Methylammonium lead halide perovskites have gained a lot of attention because of their remarkable physical properties and potential for numerous (opto)electronic applications. Here, high-performance photodetectors based on CH3NH3PbI3 (MAPbI3)/CdS heterostructures, are demonstrated. The resulting self-powered MAPbI3/CdS photodetectors show excellent operating characteristics including a maximum detectivity of 2.3×1011 Jones with responsivity of 0.43 A/W measured at 730 nm. A temporal response time of less than 14 ms was achieved. The mechanisms of charge separation and transport at the interface of the MAPbI3/CdS junction were investigated via conductive atomic force microscopy (C-AFM) and photoconductive atomic force microscopy (PC-AFM). Obtained results show that grain boundaries exhibit higher photocurrent than flat regions of the top perovskite layer, which indicates that excitons preferentially separate at the grain boundaries of the perovskite thin film, i.e. at the edges of the MAPbI3 crystals. The study of the photoelectric mechanism at the nanoscale suggests the device performance could potentially be fine-tuned through grain boundary engineering, which provides essential insights for the fabrication of high-performance photodetector. The demonstrated self-powered photodetector is promising for numerous applications in low-energy consumption optoelectronic devices.
关键词： perovskite,photodetector,heterojunction,photovoltaic,self-powered photodetectors,photoconductive atomic force microscopy
更新于2025-09-16 10:30:52