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A High‐Resolution Thin‐Film Fingerprint Sensor Using a Printed Organic Photodetector
摘要： Organic photodetectors (OPDs) have attracted much attention in recent years, due to their promise in large-area light sensing applications. Here, high-resolution slot-die-coated large-area bulk heterojunction organic photodiode (OPD) arrays are reported. The OPD uses a novel electron transport layer, indium gallium zinc oxide in combination with a molybdenum oxide top-electrode. Together, these effectively reduce dark current densities to very low levels of ≈10?7 mA cm?2 at ?2 V. The OPDs show linear behavior in a wide range of light intensities and high detectivity values under reverse bias conditions. When coated on a 508 ppi TFT backplane, a high-quality optical fingerprint scanner capable of imaging in reflection is realized. The optical and electrical properties of the fingerprint sensor are characterized and high-resolution fingerprint images are obtained.
关键词： organic photodiode,fingerprint sensor,bulk heterojunction,organic photodetector,biometric sensor
更新于2025-09-19 17:13:59
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Solar-blind deep-ultraviolet photodetectors based on solution-synthesized quasi-2D Te nanosheets
摘要： Solar-blind deep ultraviolet (DUV) photodetectors with high responsivity (R) and fast response speed are crucial for practical applications in astrophysical analysis, environmental pollution monitoring, and communication. Recently, 2D tellurium has emerged as a potential optoelectronic material because of its excellent photoelectric properties. In this study, solar-blind DUV photodetectors are demonstrated based on solution-synthesized and air-stable quasi-2D Te nanosheets (Te NSs). An R of 6.5×104 A/W at 261 nm and an external quantum efficiency (EQE) of higher than 2.26×106% were obtained, which are highest among most other 2D material-based solar-blind DUV photodetectors. Moreover, the photoelectric performance of the quasi-2D Te-based photodetector exhibited good stability even after ambient exposure for 90 days without any encapsulation. These results indicate that quasi-2D Te NSs provide a viable approach for developing solar-blind DUV photodetectors with ultrahigh R and EQE.
关键词： FET,photodetector,solar-blind deep ultraviolet,quasi-2D Te nanosheets
更新于2025-09-19 17:13:59
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New large aperture photodetectors for water Cherenkov detectors
摘要： New 50cm-diameter photo-detectors based on three different types of amplification system were developed for future large water Cherenkov detectors. The R12860 PMT, based on a box-and-line dynode, was developed with Hamamatsu Photonics K.K. (Hamamatsu). Its detection efficiency is twice that of a conventional 50cm PMT, while also improving by a factor two the charge and timing resolutions and being able to resist pressures up to 1.25 MPa. A 50cm hybrid photo-detector (HPD) using an avalanche diode (Hamamatsu, R12850) realized further improvement on the resolutions by the successful development of a preamplifier. It requires higher bias voltage (eight kilovolts), which lead to the development of a built-in power supply or watertight connector. Finally, a 50-cm micro-channel plate PMT (GDB-6203) was developed for water Cherenkov detectors by North Night Vision Technology Co., LTD in China. It is based on the GDB-6201 model, with improved timing performances. The charge resolutions for single photoelectron of the R12860, R12850 and GDB-6203 PMTs were evaluated to be 35%, 15%, and 40% (standard deviation), while the transit time spreads measured for single photoelectrons at a fixed threshold were 4.1, 3.6 and 4.3 nsec (FWHM) respectively. We obtained operational waterproof designs for all those photodetectors.
关键词： Neutrino,Water Cherenkov Detector,Photodetector
更新于2025-09-19 17:13:59
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Highly sensitive ultraviolet photodetectors based on single wall carbon nanotube-graphene hybrid films
摘要： An ultraviolet (UV) photodetector was fabricated by depositing single wall carbon nanotubes (SWCNTs) on the surface of a graphene field-effect transistor (GFET) with buried gate electrode structure. A photoresponsivity with a value as high as 204.5 A/W was obtained under a 365-nm LED light illumination with an incident power of 3.9 μW. The photoresponsivity of our photodetector is about four orders higher in magnitude than that of a recently reported UV photodetector, which is based on CNTs/graphene hybrid films with a photoresponsivity of 2.3 × 10?2 A/W. With increasing the source-drain voltage of the SWCNTs modified GFET, the photoresponsivity can be further enhanced. In addition, the photoresponsivity can also be tuned by applying a small gate voltage. This work provides a simple and feasible method to create highly sensitive UV photodetectors based on all-carbon hybrid films, which are important in many applications such as military surveillance, biomedical instrumentation and environmental monitoring.
关键词： Ultraviolet,Graphene field effect transistor,Photodetector,Single wall carbon nanotubes
更新于2025-09-19 17:13:59
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[IEEE 2018 15th IEEE India Council International Conference (INDICON) - Coimbatore, India (2018.12.16-2018.12.18)] 2018 15th IEEE India Council International Conference (INDICON) - Fabrication and Characterization of Organic-Inorganic Hybrid Perovskite CH <sub/>3</sub> NH <sub/>3</sub> PbI <sub/>3</sub> Based Metal-Semiconductor-Metal Photodetector
摘要： Organic-inorganic perovskite CH3NH3PbI3 is used for the fabrication of thin film photodetector, which is synthesized via the sol-gel chemical route. The prepared hybrid perovskite CH3NH3PbI3 thin film are characterized by X-ray diffraction (XRD), high resolution scanning electron microscope (HRSEM), photoluminescence. XRD result confirmed the formation of the tetragonal phase of CH3NH3PbI3 with crystallite size 15.7 nm. HRSEM image of hybrid perovskite CH3NH3PbI3 thin film confirmed the uniform distribution of particles and average particle size 30 nm. An efficient photoluminescence band is observed at 1.59 eV in hybrid perovskite CH3NH3PbI3 thin films at ambient temperature when excited with 405 nm wavelength light. Finally, the hybrid perovskite CH3NH3PbI3 thin film is investigated for electrical and optical response using fabricated metal-semiconductor-metal (MSM) photodetector.
关键词： Organic-inorganic hybrid perovskite,Responsivity,Metal-semiconductor-metal,Photodetector
更新于2025-09-19 17:13:59
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Flexible Self-Powered Real-Time Ultraviolet Photodetector by Coupling Triboelectric and Photoelectric Effects
摘要： The portable UV photodetector is used to remind human timely from the overexposure to UV radiation. However, the traditional UV photodetector cannot meet the practical demands and power supply problem hinders its further development. In this work, we demonstrated a flexible, transparent and self-powered UV photodetector, by coupling of triboelectric effect and photoelectric effect. The device integrates a flexible ZnO nanoparticles (NPs) UV photodetector, a transparent and flexible film based TENG (TFF-TENG), commercial chip resisters and LEDs on PET thin film. The TFF-TENG could harvest mechanical energy from finger tapping and sliding motion and power the ZnO NPs UV photodetector to realize self-powered detection. The voltage of the constant resistors connected with UV photodetector in series changes from 0.5 to 19 V under the UV light with power intensities increasing from 0.46 to 21.8 mW/cm2 and the voltage variation is reflected by the number of LEDs directly. The excellent flexibility and transparency of the device could extend its application scenarios; for example, such a portable device could be applied to real-time monitoring of the UV radiation to remind human from intense UV light.
关键词： flexible,triboelectric nanogenerator,self-powered sensor,transparent,UV photodetector
更新于2025-09-19 17:13:59
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Ultraviolet photodetector on flexible polymer substrate based on nano zinc oxide and laser-induced selective metallization
摘要： This study fabricated a sensitive and fast response nano zinc oxide (nano-ZnO) ultraviolet (UV) photodetector on flexible polymer substrate via laser direct structuring (LDS) technology. The polystyrene-block-poly-(ethylene-co-propylene)-block-polystyrene copolymer/polypropylene (SEPS/PP) composites incorporated with laser sensitizer of copper hydroxyl phosphate [Cu2(OH)PO4] were designed as flexible LDS material. X-ray photoelectron spectroscopy analysis confirmed that partial Cu2t in SEPS/PP composites was reduced to Cu0 (element copper), which could be used as a catalyst for selective metallization. As a result, the well-defined interdigitated copper electrode was successfully fabricated on polymer substrate. Moreover, the UV photodetector was fabricated through spin-coating nano-ZnO on the interdigitated copper electrode. Photocurrent analysis demonstrated that the obtained UV photodetector exhibited excellent sensitivity and stability. The rise and decay times of the UV photodetector were less than 1 and 0.25 s, respectively. This study provided a guideline to develop electronic devices on flexible polymer materials based on LDS technology.
关键词： A. Flexible polymer,A. Zinc oxide,B. UV photodetector,E. Selective metallization,E. Laser activation
更新于2025-09-19 17:13:59
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Remarkable improved photoelectric performance of SnS2 field-effect transistor with Au plasmonic nanostructures
摘要： The photoelectric devices developing towards the high integration and miniaturization in semiconductor industry can be pushed forward by the thriving research of two-dimensional layered metal dichalcogenides (2D-LMDs). SnS2 nanosheets have evident photoresponse to both ultraviolet and partial visible light, but only with a fair photoelectric performance limited by its atomic-layer thickness. Here we report a convenient and simple method to make a dramatic enhancement of the electrical and photoelectric performance of the SnS2 flake. By integrating SnS2 with Au plasmonic nanostructures, the photocurrent (Iph) increased by over 20 times. And the corresponding responsivity (R), light gain (G), and detectivity (D*) have been improved by ~2200%, 2200%, and 600%, respectively. The responsivity and detectivity of the Au NPs-SnS2 FET at 532 nm are 1125.9 A/W and 2.12×1011 Jones. Though being atomically thin, the hybrid SnS2 photodetector benefiting from local surface plasmonic resonance achieves an excellent photoelectric performance not normally possible with the pristine SnS2-only device.
关键词： 2D material,SnS2,field effect transistor,photodetector,plasmonic resonance
更新于2025-09-19 17:13:59
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P‐9.13: A Vertical Type Photodetector Based on All‐inorganic Perovskite Quantum Dots
摘要： In this work, the vertical type photodetector (PD) based on CsPbBr3 QDs with a structure of indium tin oxide (ITO)/ zinc oxide (ZnO)/ CsPbBr3 QDs/ Au is reported. In this device, the ZnO layer acts as a buffer layer, which can improve the uniformity and surface coverage of the CsPbBr3 QDs film to eliminate the current-leakage. As a result, the on/ off ratio, D* and rise time (decay time) of CsPbBr3/ZnO hybrid PD is measured to be 2.2x104, 1.06x1011 and 62ms (82ms) under low reverse bias. This work inspires the development of vertical type photodetectors based on the all-inorganic perovskite quantum dots.
关键词： ZnO,All-inorganic perovskite quantum dot,Vertical type photodetector
更新于2025-09-19 17:13:59
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405?nm ultraviolet photodetector based on tungsten disulphide thin film grown by drop casting method
摘要： In this work, a tungsten disulphide or WS2 based heterojunction photodetector device is fabricated on top of Si substrate by simple drop casting. Raman shifts are observed at 350.16 and 419.36 cm?1, confirming the successful growth of the WS2 and the non-stoichiometric WS2 layers which are verified by energy-dispersive X-ray (EDX) spectroscopy. The device is characterized for its optoelectronic properties in the ultraviolet (UV) range of 405 nm. Current–voltage (I–V) measurement is performed to obtain the I–V curves of the photodiode under laser illumination at 30.219, 56.335, 80.457, 106.998 and 129.28 mW.cm?2. The photocurrent is found to be highly dependent on the laser power. The fabricated device has a high responsivity of 145.52 mA/W and a high detectivity of 1.248 × 1011 Jones for an incident laser power density of 129.28 mW.cm?2. These observed results are promising and indicate the viability of the proposed design for optoelectronic applications.
关键词： photodetector,UV,drop-casting,fall time,responsivity,WS2
更新于2025-09-19 17:13:59