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- 实验方案
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[IEEE 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Ottawa, ON, Canada (2019.7.8-2019.7.12)] 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Numerical analysis of impact ionization in HOT HgCdTe avalanche photodiodes
摘要： Semiconductor enable individual photons to be detected when the incident flux of light is very low. This is possible thanks to the use of the avalanche multiplication phenomenon. Consequently, the obtained gain of photocurrent is from a few to several million times. The avalanche multiplication effect in semiconductors is determined by the generation rate caused by impact ionization. This paper describes the results of research aimed at investigation of the impact ionization mechanism in HgCdTe photodiodes operating at 230 K and in the medium-wave infrared range. Numerical analyses were used for the study.
关键词： avalanche photodiodes
更新于2025-09-19 17:13:59
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[IEEE 2019 Device Research Conference (DRC) - Ann Arbor, MI, USA (2019.6.23-2019.6.26)] 2019 Device Research Conference (DRC) - Efficient Optoelectronics with 2D Materials
摘要： Layered two-dimensional (2D) materials come in a large variety of material combinations and structure, and hence optoelectronic properties. Some of the materials’ intrinsic properties, like broadband absorption from ultraviolet (UV) to far infrared (IR) and THz, direct bandgap or high absorption per layer, make them promising candidates for optoelectronic devices. They can further be integrated with exiting (commercial) technologies to enhance the performance or functionality of state-of-the-art devices. In this talk, several examples of optoelectronic devices will be discussed that exploit certain properties of 2D materials for enhanced performance. All materials used in the respective references have been chemical vapor deposited or thermally converted in the case of platinum diselenide (PtSe2).
关键词： graphene,2D materials,silicon photonics,photodiodes,optoelectronics
更新于2025-09-19 17:13:59
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[IEEE 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - Xiamen, China (2019.12.17-2019.12.20)] 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - High Average Power Picosecond Thulium-doped All-fiber Amplifier
摘要： We report the fabrication of InAs planar avalanche photodiodes (APDs) using Be ion implantation. The planar APDs have a low background doping of 2 × 1014 cm?3 and large depletion widths approaching 8 μm. The thick depletion width enabled a gain of 330 to be achieved at ?26 V at 200 K without inducing a significant tunneling current. No edge breakdown was observed within the APDs. The surface leakage current was found to be low with a gain normalized dark current density of 400 μAcm?2 at ?20 V at 200 K.
关键词： ion implantation,infrared detectors,Avalanche photodiodes
更新于2025-09-19 17:13:59
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ZnO‐Based Ultraviolet Photodetectors with Tunable Spectral Responses
摘要： Conventionally, wavelength-selective ultraviolet photodetection is achieved by using broadband inorganic photodiodes coupled with optical ?lters, which signi?cantly increases the complexity and fabricating cost of devices for high pixel density imaging systems. Here, a facile approach to achieve tunable spectral response without ?lters is demonstrated. The devices are based on ZnO heterojunctions, and the response spectra are effectively modulated by tuning the position of charge generation, which results in distinct charge-collection ef?ciencies. After optimization, the ZnO/poly[bis(4-phenyl)(2,4,6-trimethylphenyl) amine] (PTAA) photodiodes exhibit narrowband ultraviolet (UV) response with a full width at half maximum (FWHM) of <25 nm, and the NiOx/ZnO devices reveal relatively broader photoresponse. All of these devices demonstrate relatively low dark currents and noises, high responsivities and detectivities, and fast response speeds. This work proves the great potential of ZnO thin ?lms for UV detection and also ?rst provides an alternative approach to effectively tune the spectral response.
关键词： atomic layer deposition,narrowband,tunable spectral response,ZnO-based photodiodes,ultraviolet photodetectors
更新于2025-09-19 17:13:59
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Room temperature low frequency noise in n <sup>+</sup> -InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes
摘要： Low frequency forward current noise as well as the photocurrent noise are studied in InAsSbP/InAs double heterostructure (DH) photodiodes, in the frequency range 1–104 Hz. The photocurrent noise in DH photodiodes is signi?cantly lower than in single heterostructure (SH) photodiodes. The forward current noise in a DH diode exhibiting the 1/f frequency dependence is also much lower than that in SH diodes. However, in some DH diodes, it is the generation-recombination mechanism that provides the dominant contribution to the forward current noise; in this case the noise level is signi?cantly higher. At suf?ciently high forward current densities, the noise decreases with current. The observed generation-recombination noise spectrum cannot be described within the conventional theory.
关键词： InAs photodiodes,low frequency noise,forward bias,photocurrent noise,Mid-IR photodetectors
更新于2025-09-19 17:13:59
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[IEEE IGARSS 2019 - 2019 IEEE International Geoscience and Remote Sensing Symposium - Yokohama, Japan (2019.7.28-2019.8.2)] IGARSS 2019 - 2019 IEEE International Geoscience and Remote Sensing Symposium - NOAA-20 Visible Infrared Imaging Radiometer Suite (VIIRS) on-Orbit Band-To-Band Registration Estimation for Reflective Solar Band (RSB) Using Scheduled Lunar Collections
摘要： We report the fabrication of InAs planar avalanche photodiodes (APDs) using Be ion implantation. The planar APDs have a low background doping of 2 × 1014 cm?3 and large depletion widths approaching 8 μm. The thick depletion width enabled a gain of 330 to be achieved at ?26 V at 200 K without inducing a significant tunneling current. No edge breakdown was observed within the APDs. The surface leakage current was found to be low with a gain normalized dark current density of 400 μAcm?2 at ?20 V at 200 K.
关键词： infrared detectors,ion implantation,Avalanche photodiodes
更新于2025-09-19 17:13:59
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Ultrasensitive Multilayer MoS <sub/>2</sub> a??Based Photodetector with Permanently Grounded Gate Effect
摘要： 2D materials, specifically MoS2 semiconductors, have received tremendous attention for photo-sensing applications due to their tunable bandgap and low noise levels. A unique photodetector using multilayer MoS2 as the semiconductor channel, in which the gate electrode of the device is permanently connected to the grounded source electrode to introduce rectification, is reported. The proposed grounded-gate photodiode exhibits high photo-responsivity of 1.031 A W?1, excellent photodetectivity (>6 × 1010 jones), and highly stable rise/fall time response (100–200 ms) under illumination of visible light (at the wavelengths of 405, 532, and 638 nm). Numerical device simulations using quantum transport methods and photoconductive effects are used to explain the device operation. It is also suggested that the gate metal work function can be carefully chosen to increase the sensitivity of the grounded-gate photodetector by suppressing the dark current. The grounded-gate device proposed, owing to the properties of rectifying behavior, low contact resistance, consistent photoresponsivity, and linear sensitivity, provides a new platform for next-generation applications in the field of electronics and optoelectronics.
关键词： photodetectors,molybdenum disulfide,grounded-gate effect,photodiodes,transition metal dichalcogenides
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - A Compact Circuit Model for Si-Ge Avalanche Photodiodes over a Wide Range of Gain
摘要： A Si-Ge avalanche photodiode circuit model is demonstrated, which includes carrier transit time, avalanche buildup time, and electrical parasitics. Electrical and optical dynamics are accurately captured over a wide range of gain. Excellent matching between simulated and measured 50 Gb/s PAM4 eye diagrams is achieved.
关键词： Avalanche photodiodes (APDs),Optical communication,Modeling
更新于2025-09-16 10:30:52
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[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Unit-cell design for antenna arrays efficiently matched to uni-travelling-carrier photodiodes
摘要： We present an antenna array with a backing reflector that allows one to obtain efficient matching to integrated sources or loads with low input resistance. In the infinite array limit, it is possible to describe the proposed unit-cell as an equivalent network with closed-form expressions for its different constituents. This analytic approach enables the preliminary design of arrays with improved matching efficiency for optimum power transmission/reception. The proposed solution has enabled an improved matching to a uni-travelling-carrier photodiode with a maximum improvement of 3 dB in the radiated power with respect to a 72-(cid:2) antenna, and featuring a 50% bandwidth.
关键词： uni-travelling-carrier photodiodes,radiated power,unit-cell design,impedance matching,antenna array
更新于2025-09-16 10:30:52
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[IEEE 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Ottawa, ON, Canada (2019.7.8-2019.7.12)] 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - The Influence of Periodic Ultra-thin AlN Interlayers in Multiplication Region on the GaN Avalanche Photodiode
摘要： GaN APD with periodic ultra-thin AlN interlayers in multiplication region has been proposed to obtain a high gain at constant voltage mode. The influence of interlayers on the multiplication process was the AlN numerically simulated and analyzed. The results predict that the multiplication process contains three different stages with the increase of the reverse voltage. The experimental results agree with the numerically simulation very well and a high gain of 6×104 at constant voltage mode was obtained.
关键词： constant voltage mode,Avalanche photodiodes,AlN interlayers,high gain
更新于2025-09-16 10:30:52