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[IEEE 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Fukuoka, Japan (2019.7.7-2019.7.11)] 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Lossless Scalable Optical Switch Design in a SiP/InP Hybrid Platform
摘要： Lossless and distortion-free experimental operation of an 8×8 SiP/InP hybrid optical switch is demonstrated. The design employs an 8-channel InP gain block added to a SiP switch to compensate for its high insertion loss.
关键词： photonic integrated circuits,optical switches,indium phosphide,silicon photonics,hybrid integrated circuits,Optical interconnects
更新于2025-09-16 10:30:52
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Nanocomposites for Photonic and Electronic Applications || Green photonics integrated circuits based on organica??inorganic hybrids
摘要： Within the last decade, most applications in data communication and storage, as well as sensing, have become highly integrated, leading to an incorporation and adaption of optical components toward high integration levels [1]. For this purpose, photonic integrated circuits (PICs) have attracted a large interest as they contain several optical components in a single chip (all-in-one package), reducing the size, weight, power consumption, and the cost of optical-to-electrical-to-optical conversions [2]. The interest in PICs is also justified by other advantages, such as minimum number of optical fiber connections, high sensitivity, and electromagnetic immunity [3].
关键词： organic-inorganic hybrids,photonic integrated circuits (PICs),Green photonics,optical components,integrated circuits
更新于2025-09-16 10:30:52
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Dispersion tailoring of silicon nanowire optical rectangular waveguide (SNORW)
摘要： Dispersion analysis on silicon nanowire optical rectangular waveguide (SNORW) has been presented in this paper by guiding light inside low refractive index region. Dispersion engineering is an essential study to utilize any photonic integrated circuit-based waveguide in linear and nonlinear optical devices. This paper exhibits distinctive dispersion characteristics recognized in the wavelengths of S, C and L bands by tailoring physical parameters of SNORW. Modal investigation and numerical analysis have been carried out by finite element method (FEM), which shows that SNORW configuration enables the flat and low negative dispersion behavior. This paper also demonstrates the utilization of cladding materials and structural parameters of SNORW to tune the magnitude and behavior of dispersion for flat dispersion profile.
关键词： Silicon nanowire,Photonic integrated circuits,Optical waveguide,Dispersion,Silicon photonics,Photonic structure,Nanophotonics
更新于2025-09-16 10:30:52
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[IEEE 2019 International Conference on Optical MEMS and Nanophotonics (OMN) - Daejeon, Korea (South) (2019.7.28-2019.8.1)] 2019 International Conference on Optical MEMS and Nanophotonics (OMN) - Low-Loss and Broadband Silicon Photonic Y- Junction Using Tapered Rib Waveguides
摘要： We report on low loss and broad bandwidth X-junctions based on adiabatically tapered rib waveguide silicon photonic devices. The fabricated devices exhibit a compact footprint of 20 μm (taper length), a broad bandwidth over 24 nm, and a low excess loss of 0.28 dB. The demonstrated device has a compact footprint of 20 μm (taper length), a broad bandwidth over 24 nm, and a low excess loss of 0.28 dB.
关键词： Advanced passive devices,adiabatic tapered rib waveguide,3 dB Optical power splitter,Photonic integrated circuits
更新于2025-09-16 10:30:52
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Ion-Induced Electrical Isolation in GaN-Based Platform for Applications in Integrated Photonics
摘要： GaN based Photonic Integrated Circuits (PICs) have now become a global contender for their wide range of applications owing their physical characteristics. The GaN material system acts as a promising platform; compatible with silicon and sapphire substrates. Both the carrier transport and carrier removal techniques are vital to develop the efficient platform for the integration of photonic circuits. We demonstrate the carrier removal mechanism in silicon (Si) doped GaN (0001) epitaxially grown on c-plane sapphire wafer using ion engineering of the devices. Ion-engineered regions within the active layers of the device are modelled, fabricated and characterized to assess the isolation created. Helium and Carbon ions with pre-designed doses and energies are used to irradiate the device structures. We have modelled and fabricated ion-engineered regions within the active layers and studied the carrier transport properties on said regions to isolate that particular part with either of active photonic components placed at the common platform. After ion irradiation, detailed analysis in terms of electric field dependent current characteristics, sheet resistance, carrier mobilities, activation energies, dark and photo currents under zero (ground) and multiple biases are examined to see the extent of charge leakage and to map the charge behavior under nominal operation. Device characteristics under wide regime of annealing temperatures ranging from 300oC to 1000oC are mapped to evaluate the thermal stability of implant driven isolated regions. Activation energies of implanted and parent regions has also been studied. The dark and photon driven electric currents at ground and under biased have been measured to investigate the photo-induced transport phenomenon.
关键词： Photonic Integrated Circuits,Electrical Isolation,Ion Implantation,Crosstalk
更新于2025-09-16 10:30:52
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Thick film hydrogen silsesquioxane planarization for passive component technology associated with electronic-photonic integrated circuits
摘要： Migrating electronic-photonic integrated circuits (EPICs) to higher data rates requires efficient electrical interfaces. This can be achieved with microwave technologies such as coplanar and microstrip transmission lines, but these can be difficult to apply in EPICs because of the complexity of the fabrication processes associated with monolithic integration. In this work, the authors report a novel method for planarizing a thick, low-κ film based on multiple-spins of layers of hydrogen silsesquioxane without a need for thermal curing. Films of total thicknesses of 5 and 6 μm were planarized on a heavily doped InP substrate and used to realize coplanar waveguide transmission lines. The film shape is defined as an integral part of the fabrication process without any need for etching. A coplanar waveguide with a characteristic impedance of between 48 and 56 Ω over the frequency range 10 MHz–67 GHz was demonstrated.
关键词： planarization,hydrogen silsesquioxane,low-κ film,electronic-photonic integrated circuits,coplanar waveguide
更新于2025-09-16 10:30:52
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Fully Reconfigurable Waveguide Bragg Gratings for Programmable Photonic Signal Processing
摘要： Fiber Bragg gratings have been invented for over three decades and have been intensively employed in optical communications systems and sensor systems. The key limitation of a fiber Bragg grating is that once fabricated, it is hard to be tuned or with very limited tunability via thermal or mechanical tuning. Recently, great efforts have been directed into the study of realizing Bragg gratings on silicon-on-insulator (SOI) platform. The key advantage of Bragg gratings implemented based on SOI is that the gratings can be fast and electrically reconfigured with the use of free-carrier plasma dispersion effect in silicon, which can be employed for fast programmable photonic signal processing. In this paper, Bragg gratings based on SOI that are electrically programmable will be reviewed, and their use for advanced programmable optical and microwave signal processing will be discussed.
关键词： photonic integrated circuits,silicon photonics,Bragg gratings,optical signal processing,Microwave photonics
更新于2025-09-16 10:30:52
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Opportunities for photonic integrated circuits in optical gas sensors
摘要： In this article, the potential of photonic integrated circuits (PICs) for modern gas sensing applications is discussed. Optical detection systems can be found at the high-end of the currently available gas detectors, and PIC-based optical spectroscopic devices promise a significant reduction in size and cost. The performance of such devices is reviewed here. This discussion is not limited to one semiconductor platform, but includes several available platforms operating from the visible wavelength range up to the long wavelength infrared. The different platforms are evaluated regarding their capabilities in creating a fully integrated spectroscopic setup, including light source, interaction cell and detection unit. Advanced spectroscopy methods are assessed regarding their PIC compatibility. Based on the comparison of PICs with state-of-the-art bulk optical devices, it can be concluded that they can fill the application space of compact and low cost optical gas sensors.
关键词： gas sensing,indium phosphide,spectroscopy,silicon nitride,photonic integrated circuits,silicon photonics
更新于2025-09-16 10:30:52
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A Multipurpose and Highly-Compact Plasmonic Filter based on Metal-Insulator-Metal Waveguides
摘要： A multipurpose and ultra-compact nanoplasmonic wavelength filter based on stub structure in a metal-insulator-metal (MIM) waveguide is suggested and numerically investigated. A novel approach of connecting two stepped-like apertures to both input and output ports is applied to form Fabry-Perot (FP) cavities, which enabled the structure to act as a dual band-pass filter at wavelengths 1310 nm and 1550 nm. It is shown that the variation in cavities’ length allows to realize a long-wavelength cutoff filter, and cutoff wavelength can be easily tuned by adjusting the length of the cavities. Furthermore, it is revealed that increasing the gap between the stepped-like apertures and the cavities provides a triple band-pass at telecom wavelengths, e.g. 1267.5nm, 1414.19 nm, and 1644.7 nm. The tunable broadband high-pass wavelength filter is then achieved while the lengths of stepped-like apertures and stub resonators are set to be identical. Finally, a tunable nearly perfect absorber can be obtained by varying the width of stub resonators. Therefore, because of functionality, size, as well as efficiency the proposed plasmonic filter may greatly contribute to miniaturization of next generation of photonic integrated circuits (PICs), and find applications in on-chip integration and wavelength-division multiplexing (WDM) in optical communication systems.
关键词： wavelength filtering devices,optical filters,Coupled resonators,photonic integrated circuits,surface plasmon polaritons,Fabry-Perot
更新于2025-09-16 10:30:52
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All-Optical Wavelength Conversion in an InP Photonic Integrated Turbo-Switch
摘要： We experimentally demonstrate all-optical wavelength conversion of 56 Gb/s non-return-to-zero (NRZ) signals in an Indium Phosphide (InP) photonic integrated circuit implementing a turbo-switch. The circuit consists of two cascaded semiconductor optical amplifiers (SOAs) with a bandpass filter in between. In this configuration, cross gain modulation (XGM) between a modulated input signal and a continuous wave (CW) light in the first SOA allows to generate a wavelength converted copy of the input signal, while the second SOA, fed by the probe signal selected by the filter, ensures a fast gain recovery. Operations in down- and up-conversion are shown by ER and BER measurements, demonstrating the effectiveness of the photonic integrated circuit (PIC).
关键词： all-optical wavelength conversion,semiconductor optical amplifiers,photonic integrated circuits,turbo-switch,Integrated optics
更新于2025-09-12 10:27:22