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Membrane III-V/Si DFB Laser using Uniform Grating and Width-Modulated Si Waveguide
摘要： Membrane buried-heterostructure III-V/Si distributed feedback (DFB) lasers with a stopband-modulated cavity on a Si substrate have been developed. The membrane III-V layers with 230-nm thick enable us to construct an optical supermode with a 220-nm-thick Si waveguide that is used in standard Si photonics platform. We employ a uniform grating and Si waveguide, in which Si waveguide width is modulated to control the center wavelength of the stopband. The cavity can be designed by controlling the modulation width and modulation length of Si waveguide. Therefore, it is easy to engineer and fabricate the laser cavity compared with the cavity using λ/4-phase shift grating. Output light from the cavity is coupled to Si waveguide through InP inverse taper waveguide, and then coupled to SiOx waveguide through Si inverse taper waveguide, which provides the 2-dB fiber coupling loss. We have demonstrated single-mode lasing by using Si waveguide, where its width is increased 80 nm at the center of the cavity. The threshold current and maximum fiber output power are 3 mA and 4 mW, respectively. By extending the active region length to 1 mm, 17-mW fiber coupled output power is obtained. High-temperature operation up to 130°C is also obtained with a 1-mW fiber output power.
关键词： photonic integrated circuits,semiconductor lasers,Silicon photonics
更新于2025-09-19 17:13:59
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Si Photonics for Practical LiDAR Solutions
摘要： In the article the authors discuss light detection and ranging (LiDAR) for automotive applications and the potential roles Si photonics can play in practice. The authors review published research work on Si photonics optical phased array (OPA) and other relevant devices in the past decade with in-depth technical analysis with respect to practical system design considerations. The commercialization status of certain LiDAR technologies is briefly introduced.
关键词： Si photonics,FMCW,OPA,LiDAR,ToF
更新于2025-09-19 17:13:59
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Buried‐Tunnel Junction Current Injection for InP‐Based Nanomembrane Photonic Crystal Surface Emitting Lasers on Silicon
摘要： Herein, the design, metal-organic vapor-phase epitaxial growth, fabrication, and characterization of buried-tunnel junction (BTJ) current injection structures for InP/Si hybrid nanomembrane photonic crystal surface emitting lasers (PCSELs) are reported. Corresponding BTJ-light-emitting diodes on InP substrate show low series resistance and uniform carrier injection over square-shaped device areas with side length ranging from 15 up to 250 μm, whereas BTJ-PCSEL structures with similar current injection con?guration fabricated on photonic-crystal silicon-on-insulator substrate using transfer print technology show signi?cant linewidth narrowing at low current density.
关键词： photonic-crystal surface emitting lasers,buried-tunnel junctions,photonic bandedge lasers,silicon photonics,surface emitting lasers
更新于2025-09-19 17:13:59
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Figure-of-merit characterization of hydrogen-bond acidic sorbents for waveguide-enhanced Raman spectroscopy
摘要： The optical properties of several hydrogen-bond acidic sorbent materials are evaluated in situ to assess their suitability for waveguide-enhanced Raman spectroscopy (WERS) of vapor-phase organophosphonates. A number of characteristics critical to WERS are evaluated for each sorbent: infrared absorption, Raman spectral background, and the limit of detection for a test hydrogen-bond-basic analyte (dimethyl methylphosphonate, DMMP). We describe the chemical properties of the sorbents that differentiate their optical properties for sensing. Then, we introduce a sorbent figure-of-merit that quantifies these differences and provides a framework to assess the quality of newly-developed sorbent materials.
关键词： Raman,WERS,sorbent,photonics,PICs,waveguide
更新于2025-09-19 17:13:59
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[IEEE 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - Xiamen, China (2019.12.17-2019.12.20)] 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - Tunable 360 Degrees Phase Shifter Based on Spoof Surface Plasmon Polaritons Waveguide
摘要： The increasing number of computational servers in data centers is imposing tighter constraints on the networking infrastructure. Scalable power efficient optical interconnect network becomes necessary to leverage the bandwidth capacity of current electronic switches or opto-electronic components. Hence, novel optical interconnect technology can enhance the network capacity by harnessing the feasibility of simultaneous processing of optical signal in the wavelength and time domains. In this paper, we present a four channel optical passive wavelength-striped mapping (PWSM) device, which passively time compresses/expands serial packets through optical wavelength multiplexing/demultiplexing. The PWSM device, which has a 1 × 4 channel optical wavelength demultiplexer with integrated optical delay lines, is designed in a low-loss Si3N4 (propagation loss ～3.1 dB/m) waveguide platform. The PWSM device multiplexes/demultiplexes four WDM channels and offsets in time the adjacent channels to optically serialize/de-serialize data packets. In this demonstration, a 64 ns long data packet is formed at the output of the device by combining four 16 ns data segments of the packet in time domain. Incremental optical insertion loss between adjacent channels is ～9.7 dB due to the integrated passive optical delay waveguides. The data rate of the four segmented packets and the combined packet is 25 Gb/sec. We have measured a bit error rate performance below 1 ×10?9 for the 64 ns serial data packet regenerated by the PWSM device for a received optical power of –6.7 dBm.
关键词： wavelength filtering devices,Photonic integrated circuits,silica and silicon nitride photonics
更新于2025-09-19 17:13:59
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Silicon ring resonator electro-optical modulator utilizing epsilon-near-zero characteristics of indium tin oxide
摘要： One crucial component in optical communication systems is the optical modulator. It links between the electric and optical domains as it transforms the electric signal into an optical stream. Electro-optical modulation is a very popular scheme. Recently, indium tin oxide (ITO) has been intensively used in optical modulators due to its epsilon-near-zero characteristics. A silicon electro-optic ring resonator modulator is proposed in terms of the outspread application of ITO. An extinction ratio of about 14 dB as well as an insertion loss of 0.075 dB are achieved at a standard telecommunication wavelength of 1.55 microns. The design has low losses, high efficiency, and compact size.
关键词： silicon nanophotonics,ring resonators,indium tin oxide,electro-optical modulators,integrated photonics
更新于2025-09-19 17:13:59
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Thermal Poling of Optical Fibers: A Numerical History
摘要： This review gives a perspective of the thermal poling technique throughout its chronological evolution, starting in the early 1990s when the first observation of the permanent creation of a second order non-linearity inside a bulk piece of glass was reported. We then discuss a number of significant developments in this field, focusing particular attention on working principles, numerical analysis and theoretical advances in thermal poling of optical fibers, and conclude with the most recent studies and publications by the authors. Our latest works show how in principle, optical fibers of any geometry (conventional step-index, solid core microstructured, etc) and of any length can be poled, thus creating an advanced technological platform for the realization of all-fiber quadratic non-linear photonics.
关键词： thermal poling,numerical analysis,non-linear photonics,optical fibers
更新于2025-09-19 17:13:59
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Perspective: optically-pumped III–V quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates
摘要： Direct epitaxial growth III–V quantum dot (QD) structures on CMOS-compatible silicon substrates is considered as one of the most promising approaches to achieve low-cost and high-yield Si-based lasers for silicon photonic integration. However, epitaxial growth of III–V materials on Si encounters the following three major challenges: high density of threading dislocations, antiphase boundaries and thermal cracks, which significantly degrade the crystal quality and potential device performance. In this review, we will focus on some recent results related to InAs/GaAs quantum dot lasers on Si (001) substrates by III–V/IV hybrid epitaxial growth via (111)-faceted Si hollow structures. Moreover, by using the step-graded epitaxial growth process the emission wavelength of InAs QDs can be extended from O-band to C/L-band. High-performance InAs/GaAs QD micro-disk lasers with sub-milliwatts threshold on Si (001) substrates are fabricated and characterized. The above results pave a promising path towards the on-chip lasers for optical interconnect applications.
关键词： quantum dots,silicon photonics,epitaxial growth,semiconductor lasers
更新于2025-09-19 17:13:59
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Facile enhancement of optical sensitivity in GaN ultraviolet photodetectors by using in-situ plano-convex polymer lens
摘要： InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) are experimentally examined as photonic frequency converters for future broadband optical and wireless communication systems. Optoelectronic properties and three-terminal functionalities of the InP-HEMTs and G-FETs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A 10 Gbit/s-class data signal on a 112.5 GHz carrier is mixed down to a 25 GHz IF band with an 87.5 GHz LO signal that is simultaneously self-generated from an optically injected photomixed beat note. The results suggest that the intrinsic channel of the G-FET can achieve a speed performance that is superior to that of an InP-HEMT having an equivalent device feature size. The reduction of the extrinsic parasitic resistances and the implementation of an efficient photo-absorption structure in the G-FET may allow a millimeter-wave and sub-THz photonic frequency conversion with a sufficiently high conversion gain for practical purposes.
关键词： millimeter wave photonics,frequency conversion,FETs,millimeter wave communication,InP,graphene,HEMTs,radio access networks
更新于2025-09-19 17:13:59
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A review of nonlinear applications in silicon optical fibers from telecom wavelengths into the mid-infrared spectral region
摘要： Glass-glad silicon core fibers are attracting considerable attention for use in nonlinear applications due to their tight light confinement and intrinsically high third-order nonlinearities. Recent advances in the fabrication procedures have shown that molten core fiber drawing and post-processing techniques can be combined in a versatile approach to produce low-loss fibers with submicron-sized crystalline cores. In this paper, we review current progress in the nonlinear application of silicon-based optical fibers from telecom wavelengths into the mid-infrared. Particular attention is paid to dispersion engineering the fibers to achieve efficient parametric amplification, wavelength conversion and mid-infrared supercontinuum generation.
关键词： Fiber optics,silicon photonics,supercontinuum generation,fiber nonlinear optics
更新于2025-09-19 17:13:59