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Flexible electrochromic tungsten/iron mixed oxide films synthesized by an atmospheric pressure plasma jet
摘要： Flexible electrochromic organo-tungsten- iron oxide (WFexOyCz) films are rapidly deposited onto flexible (60 Ω/□ polyethylene terephthalate/indium tin oxide; PET/ITO) substrates by a low temperature-atmospheric pressure-plasma polymerization method with an atmospheric pressure plasma jet (APPJ) for a short exposed duration of 48 s. The precursor vapors of tungsten hexacarbonyl [W(CO)6] and biscyclopentadienyl iron [ferrocene; Fe(C5H5)2] are mixed with O2 gases at various gas flow rates, injected into air plasma jet and sprayed onto PET/ITO substrates at room temperature (~23oC) and at atmospheric pressure (1.013 × 105 Pa). Flexible electrochromic WFexOyCz films are synthesized with a specific addition of oxygen gases with superior lithium electrochromic properties as demonstrated by a potential sweep alternating between -1 V and 2 V at a scan rate of 40 mV/s in a 1 M LiClO4-propylene carbonate electrolyte. With amorphous WFexOyCz films produced with an APPJ by adding oxygen gases at a specific flow rate of 0.5 sccm, a high value in oxygen deficiency up to 0.189 allows more Li+ ions to intercalate into and deintercalate out of the film. Significant coloration and bleaching are proven by the high values in optical transmittance modulation (ΔT) of up to 70.3%, optical density (ΔOD) up to 0.77 and color efficiency (η) up to 61.3 cm2/C, at a wavelength of 800 nm, respectively.
关键词： Electrochromic materials,Iron oxide,Tungsten oxide,Flexible electrochromic film,Atmospheric pressure plasmas,Plasma polymerization
更新于2025-09-23 15:21:21
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Characterization and Formation Mechanism of the Nanodiamond Synthesized by A High Energy Arc-Plasma
摘要： A new fabrication strategy using thermal source of DC arc-discharge plasma is developed in the synthesis of nanodiamond particles. In the fabrication process, a solid mixture of Ni/Si/graphite coarse powders is used as the raw materials, meanwhile the gaseous mixture of H2/Ar served as the preparation atmosphere. The well-established arc-discharge plasma is significant in operation under a low gaseous pressure and an acceptable energy condition, and would be potential to become a novel process for synthesis of nanodiamond particles in large scale. The initially formed SiC clusters and the solid solution of Ni(C) particles are crucial in serving as crystal nuclei of diamond and an in situ carbon source which can gradually be released with cooling, respectively. Structural characterizations by high resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), Raman spectra, and X-ray diffraction (XRD) confirm the existence nanodiamond particles, they are typically spherical with 5–20 nm in size. The formation of such nanodiamond particles by the arc-discharge thermal source is discussed in detail on the knowledge of binary phase diagram, constitution of raw materials, and nucleation/growth processes under the experimental conditions.
关键词： formation mechanism,synthesis,nanodiamond,DC arc-discharge plasma
更新于2025-09-23 15:21:21
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Effects of material degradation on electrical and optical characteristics of surface dielectric barrier discharge
摘要： In this paper, screen-printed electrodes are asymmetrically fabricated on three different dielectrics (multi-layered polyimide, quartz, and alumina). Supplied with AC power, sustainable surface dielectric barrier discharge (SDBD) plasma is generated in atmospheric pressure. During plasma processing, different changes of material degradation and discharge images are observed. The corresponding electrical and optical characteristics are investigated by optical emission spectra (OES) and Lissajous figure analysis, respectively. It is found that both dielectric degradation and electrode erosion occur on the surface of the polyimide based SDBD device, while there is only electrode erosion for the quartz and alumina based devices, which results in different changes of electrical characteristics. OES calculated results show that with an increase of discharge aging time, electron temperature increases for the polyimide based SDBD device and decreases for quartz and alumina based SDBD devices, while all the gas temperatures of three dielectrics increase with the aging time. Furthermore, compared to vibrational temperature and gas temperature, the distribution of electron temperature is more suitable for evaluating the changes in discharge uniformity during plasma processing.
关键词： electrical characteristics,plasma processing,optical characteristics,surface dielectric barrier discharge,material degradation
更新于2025-09-23 15:21:21
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3D spectroscopic measurement of argon and metal vapour in MIG welding
摘要： Spectroscopic measurements for gas-metal arc (GMA) phenomena have been recently performed. The studies have reported that the metal vapour behaviour greatly affects the arc properties. However, they can be applied only to axially symmetric phenomena because of the assumption used for the measurement. GMA welding are normally performed with a travel speed, and most of the phenomena become axially asymmetric. This study constructed the simultaneous and multidirectional measurement system by 12 CCD cameras which can capture such axially asymmetric GMA phenomena. We measured the metal inert gas welding process with use of two types of narrowband interference filters for Ar I and Fe I during the one measurement, and observed axially asymmetrical intensity distributions in the globular and the spray transfer mode. We found that the globular transfer mode that is seemingly chaotic distribution can be regarded as the distribution where the deviation of Ar I is larger than Fe I from the axially symmetric double-ring distribution that consists of Ar I and Fe I.
关键词： image reconstruction,ML-EM method,CCD camera,globular transfer,interference filter,axially asymmetrical arc plasma,spray transfer,Optical emission spectroscopy
更新于2025-09-23 15:21:21
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Role of ion energy flux on the structural and morphological properties of silicon oxy-nitride composite films deposited by plasma focus device
摘要： Crystalline silicon oxy-nitride (SiON) composite films are deposited on Si substrate for multiple (5, 15, 25 and 50) focus shots (FS) by plasma focus device. The X-rays diffraction patterns reveal the development of various diffraction peaks related to Si, Si3N4, and SiO2 phases which confirms the formation of SiON composite film. The intensity of Si3N4 (1 0 2) plane is linearly increased with the increase of FS. The Si3N4 (1 0 2) phase does not nucleate for 5 FS. Raman analysis confirms the formation of β–Si–N phase. Raman and Fourier transform infrared spectroscopy analysis reveals that the strength of chemical bonds like Si–N, Si–O formed during the deposition process of SiON composite films is associated with the bonds intensity which in turn depends on the number of FS. The field emission scanning electron microscopic analysis reveals that the surface morphology like size, shape and distribution of micro/nano-dimensional particles, film compactness and the formation of micro-rods, micro-teethes and micro-tubes of SiON composite films is entirely associated with the rise in substrate surface transient temperature which in turn depends on the increasing number of FS. The EDX spectrum confirms the presence of Si (22.5 ± 4.7 at. %), N (13.4 ± 4.5 at. %) and O (54.7 ± 11.3 at. %) in the SiON composite film. The thickness of SiON composite film deposited for 50 FS is found to ～ 15.47 μm.
关键词： composite,crystallite size,micro-tubes,Plasma focus,thickness,XRD
更新于2025-09-23 15:21:21
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Fast collisional electron heating and relaxation in thin foils driven by a circularly polarized ultraintense short-pulse laser
摘要： The creation of well-thermalized, hot and dense plasmas is attractive for warm dense matter studies. We investigate collisionally induced energy absorption of an ultraintense and ultrashort laser pulse in a solid copper target using particle-in-cell simulations. We ?nd that, upon irradiation by a 2 × 1020 W cm?2 intensity, 60 fs duration, circularly polarized laser pulse, the electrons in the collisional simulation rapidly reach a well-thermalized distribution with ～3.5 keV temperature, while in the collisionless simulation the absorption is several orders of magnitude weaker. Circular polarization inhibits the generation of suprathermal electrons, while ensuring ef?cient bulk heating through inverse bremsstrahlung, a mechanism usually overlooked at taking account of both collisional and ?eld ionization, yields similar results: the bulk electrons are heated to ～2.5 keV, but with a somewhat lower degree of thermalization than in the pre-set, ?xed-ionization case. The collisional absorption mechanism is found to be robust against variations in the laser parameters. At ?xed laser pulse energy, increasing the pulse duration rather than the intensity leads to a higher electron temperature.
关键词： plasma dynamics,plasma heating,plasma simulation
更新于2025-09-23 15:21:01
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Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
摘要： The effects of low-energy (<15 eV) high-flux O2+ ion bombardment (>1017 cm?2 cycle?1) during the plasma-enhanced atomic layer deposition (PE-ALD) were investigated. High-dose O2+ ion bombardment on the properties of Al2O3 films deposited on 3D nanostructures by PE-ALD caused interfacial mixing, and AlSiOx films with abrupt interfaces were formed on Si surfaces. Interfacially mixed AlSiOx films were selectively formed on single-crystal Si, amorphous Si, and degraded SiO2 surfaces, whereas normal ALD Al2O3 films were formed on thermally grown SiO2 surfaces. At the same time, the interfacially mixed AlSiOx films were selectively formed on the horizontal top and bottom faces of the 3D nanostructures, whereas normal ALD Al2O3 films were formed on the vertical sidewalls. The morphology and thickness of the film deposited on the amorphous Si surface were the same as those on the single-crystal Si surface. The interfacially mixed AlSiOx film possessed rough surface morphology and a layered structure of Al-/Si-/Al-rich AlSiOx layers. The low-energy high-flux O2+ ion bombardment condition required for the interfacial-mixing ALD was realized in a direct inductively coupled plasma (ICP) reactor with a self-resonant planar coil, in which high-density plasma was excited near the substrate. The O2+ ion flux was found to be controllable over a wide range through variation in the O2 pressure. The ratio of O2+ ion flux at 0.01 Torr to that at 1 Torr was 289. The steep decrease of the ion flux with increasing pressure was attributed to the decrease of electron density in the upstream plasma for intensifying electron energy loss and the decrease of the ambipolar diffusion coefficient in the downstream plasma. A comparison of electron densities near the substrate and those at the presheath edge calculated from measured positive ion fluxes using the Bohm criterion revealed that negative ions, which significantly affect the positive ion flux, scarcely exist near the substrate. The interfacial-mixing PE-ALD has the potential to realize area-selective and topographically selective depositions, which are key technologies for fabricating next-generation electronic devices with 3D nanostructures. The direct ICP reactor is suitable for realizing selective deposition using the interfacial-mixing ALD.
关键词： plasma-enhanced atomic layer deposition,selective deposition,inductively coupled plasma,interfacial mixing,ion bombardment
更新于2025-09-23 15:21:01
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Plasma Science and Technology - Progress in Physical States and Chemical Reactions || Plasma-Enhanced Laser Materials Processing
摘要： In the last few years, the combination of laser irradiation with atmospheric pressure plasmas, also referred to as laser–plasma hybrid technology, turned out to be a powerful technique for different materials processing tasks. This chapter gives an overview on this novel approach. Two methods, simultaneous and sequential laser-plasma process‐ ing, are covered. In the first case, both the plasma and the laser irradiation are applied to the substrate at the same time. Depending on the process gas and the discharge type, the plasma provides a number of species that can contribute to the laser process plasma- physically or plasma-chemically. Sequential plasma-enhanced laser processing is based on a plasma-induced modification of essential material properties, thus improving the coupling of laser energy into the material during subsequent laser ablation. Simultane‐ ous plasma-assisted laser processing allows increasing the efficiency of a number of dif‐ ferent laser applications such as cleaning, microstructuring, or annealing processes. Sequential plasma-assisted laser processing is a powerful method for the processing of transparent media due to a reduction in the laser ablation threshold and an increase in the ablation rate at the same time. In this chapter, the possibilities, underlying mecha‐ nisms, performance, and limits of the introduced approaches are presented in detail.
关键词： Laser-plasma-hybrid techniques,microstructuring,atmospheric pressure plasma,modification,cleaning
更新于2025-09-23 15:21:01
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Effects of continuous phase plate on plasma corona homogeneity and laser-plasma instabilities in experiments with three target materials
摘要： Corona homogeneity and spectra of scattered light and hot electrons produced by laser-plasma instabilities inside laser-produced plastic, aluminum, and gold plasmas were investigated with and without the use of continuous phase plate (CPP) to the laser beam. Improvement of the corona homogeneity was observed for all three materials after applying CPP, while the inhibition of the intensity of backward-scattered light and the amount of emitted hot electrons was not always synchronous for different materials, which is interpreted as a result of the changes in thresholds of the stimulated Raman scattering (SRS) and the two-plasmon decay (TPD) instability before and after the application of CPP. By comparing the changes of SRS scattered light intensity with the amount of hot electrons in different kinetic energy ranges for all three target materials in our experiments, we conclude that SRS is more responsible for the diagnosed hot electrons between 50–150 keV, and those above 150 keV should be generated by TPD, which could be explained by the difference in phase velocity of electron plasma waves between SRS and TPD calculated from measured and simulated parameters of corona and laser-plasma instabilities.
关键词： hot electrons,plasma corona homogeneity,laser-plasma instabilities
更新于2025-09-23 15:21:01
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Nickel doped TiO <sub/>2</sub> films by a modified laser plasma source for photocatalytic applications
摘要： We reports a study on pure and Ni-doped TiO2 thin ?lms produced via laser ablation technique. The novelty of the work consists that both synthesis and doping were carried out in a single process, using a modi?ed laser ion source to simultaneously make pulsed laser deposition (PLD) and low-energy ion implantation (by post-acceleration method). In particular, two titania ?lms were synthesized via PLD starting from a rutile target. One of the two ?lms was doped with Ni ions, accelerated with a voltage of 20 kV. The total implanted dose, evaluated by a Faraday cup, resulted to be 1 × 1014 ions/cm2. The crystalline phase of the obtained TiO2 ?lms was analysed by Raman spectroscopy. A higher photocatalytic activity, measured under UV irradiation using methylene blue, was estimated for the Ni-doped titania ?lm with respect the pure one.
关键词： Plasma generation (laser-produced, RF, x ray-produced),Accelerator Applications,Plasma diagnostics - probes
更新于2025-09-23 15:21:01