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Performance enhancement of dye-sensitized solar cells by plasma treatment of BaSnO3 photoanode
摘要： We describe here the synthesis of BaSnO3 nanopowder via simple co-precipitation method and its application as a substitute photoanode material in dye-sensitized solar cells. Different values of pH and calcination temperature have been applied and optimized. The production has been characterized by X-ray diffraction technique to understand the effect of pH and calcination temperature on its crystallinity and phase purity. Crystalline BaSnO3 with an average size of about 18 nm presented an excellent dye-loading capability within a short duration of time. In this report, also, porosity and microstructure improvement in the BaSnO3 layer was achieved by using non-equilibrium atmospheric pressure plasma jet treatment for the first time, which modified dye-loading and charge transport properties in BaSnO3 photoanodes, resulted in a brilliant enhancement of the DSSC efficiency. The DSSCs were fabricated using untreated and plasma-treated BaSnO3 photoanodes. The highest photon conversion efficiency of about 2.6 % was observed for the highly crystalline BaSnO3 nanoparticles synthesized within pH 12, calcined in temperature 900 oC and 3 h dye-loading with a significantly high JSC=7.10 mA/cm2, VOC=0.74 V and FF≈0.50. This value of efficiency is considerable in comparison to the previous phase pure BaSnO3-based DSSCs. After enhancement of plasma treatment time and modification of dye-loading duration, an improvement of more than 50% was recognized in DSSC efficiency (about 4%), and a reduction in dye-loading time was observed by one third, compared to the bare one.
关键词： Dye-sensitized solar cells,Plasma treatment,Dye-loading,BaSnO3 nanoparticles
更新于2025-09-12 10:27:22
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Recovery of cycling-induced endurance failed HfO <sub/><i>x</i> </sub> based memristive devices by utilizing oxygen plasma treatment
摘要： The oxygen ion (O2(cid:2)) loss effect during resistive switching (RS) cycles will inevitably lead to endurance degradation or even failure in oxide-based memristive devices. In this Letter, we propose an effective way to recover the cycling-induced endurance failed HfOx based memristive devices by utilizing oxygen plasma treatment (OPT). In the as-fabricated Pt/HfOx/Pt devices, a negative SET event is observed after consecutive normal RS cycles and eventually triggers endurance failure. The appearance of the intermediate resistance state at the initial stage of the negative SET cycle indicates a prominent reduction of the migration barrier of O2(cid:2), which accounts for the occurrence of negative SET after increasing cycles. Then, we recover the devices from endurance failure by moderate OPT, which can supply the available O2(cid:2) in RS cycles. More importantly, the first recovered devices after endurance failure can be recovered again through OPT, which better proves the validity of the recovery method. This study could provide an effective approach for understanding and addressing the cycling-induced endurance failure issue in oxide-based memristive devices.
关键词： oxygen plasma treatment,HfOx,endurance failure,memristive devices,resistive switching
更新于2025-09-12 10:27:22
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Hydrogen Plasma–Treated MoSe2 Nanosheets Enhance the Efficiency and Stability of Organic Photovoltaics
摘要： In this paper we report the effect on the power conversion efficiency (PCE) and stability of photovoltaic devices after incorporating hydrogenated two-dimensional (2D) MoSe2 nanosheets into the active layer of bulk heterojunction (BHJ) organic photovoltaics (OPV). The surface properties of 2D MoSe2 nanosheets largely affect their dispersion in the active layer blend and, thus, influence the carrier mobility, PCE, and stability of corresponding devices. We treated MoSe2 nanosheets with hydrogen plasma and investigated their influence on the polymer packing and fullerene domain size of the active layer. For the optimized devices incorporating 37.5 wt% of untreated MoSe2, we obtained a champion PCE of 9.82%, compared with the champion reference PCE of approximately 9%. After incorporating the hydrogen plasma–treated MoSe2 nanosheets, we achieved a champion PCE of 10.44%—a relative increase of 16% over that of the reference device prepared without MoSe2 nanosheets. This PCE is the one of the highest ever reported for OPVs incorporating 2D materials. We attribute this large enhancement to the enhanced exciton generation and dissociation at the MoSe2–fullerene interface and, consequently, the balanced charge carrier mobility. The device incorporating the MoSe2 nanosheets maintained 70% of its initial PCE after heat-treatment at 100 °C for 1 h; in contrast, the PCE of the reference device decreased to 60% of its initial value—a relative increase in stability of 17% after incorporating these nanosheets. We also incorporated MoSe2 nanosheets (both with and without treatment) into a polymer donor (PBDTTBO)/small molecule (IT-4F) acceptor system. The champion PCEs reached 7.85 and 8.13% for the devices incorporating the MoSe2 nanosheets with and without plasma treatment, respectively—relative increases of 8 and 12%, respectively, over that of the reference. These results should encourage a push toward the implementation of transition metal dichalcogenides to enhance the performances of BHJ OPVs.
关键词： hydrogen plasma treatment,organic photovoltaics,stability,MoSe2 nanosheets,power conversion efficiency
更新于2025-09-11 14:15:04
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In-situ Process to Form Passivated Tunneling Oxides for Front-surface Field in Rear-emitter Silicon Heterojunction Solar Cells
摘要： A novel approach involving CO2 plasma treatment of intrinsic hydrogenated amorphous silicon was developed to form ultra-thin silicon oxide (SiOx) layers, that is, passivated tunneling layers (PTLs), for the fabrication of passivated tunneling contacts. These contacts were formed by depositing the PTL/n-type hydrogenated nano-crystalline layer (nc-Si:H(n))/c-Si(n) stacks. The results indicated that a higher CO2 plasma treatment pressure was preferred for the formation of oxygen-richer components in the silicon oxide films, with Si2+, Si3+, and Si4+ peaks, and a smoother PTL/c-Si heterointerface. The PTLs with higher oxidation states and lower surface roughness exhibited advantages for the c-Si surface passivation, with a maximum implied open-circuit voltage of approximately 743 mV. The lowest contact resistivity of approximately 60 mΩcm2 was obtained using nc-Si:H(n)/PTL/c-Si(n) as the passivated tunneling contact. Most importantly, the in-situ process can help prevent the contamination of the heterointerface during device fabrication processes.
关键词： Passivated tunneling layer (PTL),Silicon oxide (SiOx),CO2 plasma treatment,Silicon surface passivation
更新于2025-09-11 14:15:04
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Confined Preparation of N-doped Commercial P25 TiO2 Photocatalysts with Fast Charge Separation by Argon-diluted Nitrogen Plasma Treatment
摘要： N-doped TiO2 attracts enormous attention due to its cheapness and excellent visible-light-driven photocatalytic activity. An approach assisted by Nitrogen plasma to synthesize the N-doped TiO2 is presented in our work by using commercial available Degussa P25 as raw material. X-ray photoelectron spectroscope (XPS) and transmission electron microscope (TEM) measurement results show that the evidence of N doping and the formation of surface disorder layer, which can both serve as active sites. Electrochemical characterizations verified the excellent photo-generated charge separation feature of the obtained N-doped P25 TiO2. High absorption of visible light, fast charge separation and numerous active sites ensure the excellent photocatalytic activity for the N-doped P25 TiO2 in the photo-oxidation of organic molecules in water. It is noteworthy that the Argon-assistant Nitrogen plasma treatment is superior to conventional pure Nitrogen plasma treatment because of confined Nitrogen ionization. From the results, this plasma treatment method may open up a new way to the application of plasma technology in the activation commercial materials.
关键词： Charge Separation,Transient photocurrents,N-doped TiO2,Plasma Treatment
更新于2025-09-10 09:29:36
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P-6.1: Asymmetric Effects of Gate-Bias Stress Voltage on the Stability under Positive and Negative Gate-Bias Stress of a-IGZO TFTs
摘要： The asymmetric effects of gate-bias stress voltage on the stability under positive gate-bias stress (PBS) and negative gate-bias stress (NBS) of amorphous InGaZnO thin-film transistors (a-IGZO TFTs) are investigated. It is observed that under PBS, the threshold voltage shift (?Vth) increases with the increased value of the gate-bias stress voltage (VStress), which is due to the enhanced electron trapping at/near the interface of the channel and the gate insulator. However, under NBS, the ?Vth is nearly unaffected by the Vstress. As the NBS-induced negative ?Vth is resulted from electron-detrapping from the donor-like states related to oxygen vacancies, it is supposed that the rate of electron-detrapping is not sensitive to the negative gate-bias voltage. The influence of N2O plasma back-channel treatment is also studied. The stability under NBS is effectively improved after the N2O plasma treatment, which originates from the decreased density of oxygen-vacancy related donor-like states within the a-IGZO channel layer.
关键词： thin-film transistors,N2O plasma treatment.,amorphous InGaZnO,gate-bias stress,stability
更新于2025-09-10 09:29:36
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Polycrystalline diamond films with tailored micro/nanostructure/doping for new large area film-based diamond electronics
摘要： This paper describes processes developed to change two key electrical properties (electrical resistivity and carrier type) of ultrananocrystalline diamond (UNCD) to microcrystalline diamond (MCD) films. The results show that the electrical properties of the investigated polycrystalline diamond films depend on the grain size and plasma treated grain boundary networks interfaces and external films’ surfaces, in which hydrogen, fluorine or nitrogen can be incorporated to tailor electrical carriers-type to tune the electrical properties. Exploring the feasibility of modulating the resistivity of polycrystalline diamond films via tailoring of grain size, surface chemistry and nitrogen or fluorine incorporation into films’ grain boundaries and external surfaces may enable applications of these diamond films as active or heat dissipation layers on micro/nano-electronic devices. This work can open the pathway to enabling an industrial process for new diamond-based electronics, since polycrystalline diamond films can be grown with extreme uniformity on 300 mm diameter Si wafers, used in manufacturing of current Si-based micro/nano-electronic devices.
关键词： Nitrogen incorporation,Diamond-based electronics,Electrical properties,Plasma treatment,Fluorine incorporation,Grain size,Polycrystalline diamond films
更新于2025-09-10 09:29:36
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Plasma Hydrogenated TiO2/Nickel Foam as an Efficient Bifunctional Electrocatalyst for Overall Water Splitting
摘要： Electrochemical water splitting is one of the most efficient technologies for hydrogen production, and fabrication of low-cost, robust, and high active electrocatalysts to replace the noble metal-based materials is one of the key issues. By using H2 plasma treatment, the TiO2/nickel foam composite is converted to be an efficient bifunctional electrocatalysts towards both hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) in the alkaline electrolyte. The investigation reveals the existence of abundant oxygen vacancies of TiO2, which might lead to the dramatic improvement of the electrical conductivity and faster charge transfer rate; also, density function theory (DFT) calculations suggest the oxygen vacancies activate surrounding surface lattice oxygen to induce the favorable reactive-intermediate adsorption energy of TiO2 for hydrogen evolution; and adjusts the strength of the chemical bonds between the TiO2 surface and reactive-intermediates to more favorable values, inducing the lower energy barrier for oxygen evolution. The finding confers a unique function to TiO2 that is different from its widely accepted role as an electrocatalytically inert semiconductor material, suggesting the H2 plasma treated TiO2/nickel foam could be bifunctional electrocatalyst for overall water splitting.
关键词： Electrocatalysis,Titanium dioxides,Water splitting,Plasma treatment,Defects
更新于2025-09-10 09:29:36
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Study on the Effect of Plasma Treatment on Flat-band-voltage and Equivalent Oxide Thickness using Metal-organic Chemical Vapor Deposition TiN Film as p-MOSFETS Metal Gate Electrode
摘要： This work aimed to study on the effects of plasma treatment on flat band voltage (Vfb) and equivalent oxide thickness (EOT) using Metal-organic Chemical Vapor Deposition (MOCVD) TiN film as p-MOSFETs metal gate electrode. The plasma treatment conditions effect on the resistance and composition properties of MOCVD TiN, consequently, they can modulate work function and control threshold voltage. The effects of “plasma treatment” were imposed to favor the formation of Ti-N bonds, thus decreasing the rate Ti-C bond and favoring a crystallized stoichiometric TiN phase to increase PMOS Vfb shift. Meanwhile, plasma treatments accelerate interfacial oxide formation and increase EOT. On the other hand, EOT increases with the increase of plasma treatment time and power in this work, but Vfb does not always increase and reach a max value.
关键词： Plasma treatment,pMOSFETs,MOCVD TiN,EOT,Vfb
更新于2025-09-09 09:28:46
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Surface Modification of Fluoropolymer Using Open-Air Plasma Treatment at Atmospheric Pressure with Ar, Ar＋O<sub>2</sub>, and Ar＋H<sub>2</sub> for Application in HighAdhesion Metal Wiring Patterns
摘要： We performed open-air plasma treatment of polytetrafluoroethylene (PTFE) at atmospheric pressure to increase the adhesion strength between PTFE and an Ag metal film formed from Ag ink. Coloration of the PTFE surface occurred during 600 s treatment with Ar plasma. The Ag/PTFE adhesion strength was 0.06 N/mm. To resolve the problem of coloration and to improve the adhesion strength, O2 or H2 gas was added. During treatment with Ar + O2 plasma with O2 content of 0.33% for 600 s, no coloration occurred but the adhesion strength decreased to zero. During treatment with Ar + H2 plasma for 600 s, coloration did not occur. Moreover, the adhesion strength increased to 0.25-0.55 N/mm. These results showed that H2 addition was effective for preventing coloration and improving adhesion strength during long-period plasma treatment. Furthermore, the uniformity of surface treatment with Ar + H2 plasma was higher than that for Ar plasma.
关键词： Adhesion,Ag Ink,Printed Circuit Board for High-Frequency,Polytetrafluoroethylene (PTFE),Atmospheric Plasma Treatment
更新于2025-09-09 09:28:46