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[IEEE 2019 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Guangzhou, China (2019.5.19-2019.5.22)] 2019 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Surface Waveguide Leaky-wave Antenna for Single-Side Beam Scanning
摘要： We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The pixel array ROIC is the proof of concept of the pixel array readout ASIC for positron-emission tomography (PET) scanner, positron-emission mammography (PEM) scanner, and Compton gamma camera. The electronics of each individual pixel integrates an analog front-end with switchable gain, an analog to digital converter (ADC), configuration registers, and a 4-state digital controller. For every detected photon, the pixel electronics provides the energy deposited in the detector with 10-bit resolution, and a fast trigger signal for time stamp. The ASIC contains the 16-pixel matrix electronics, a digital controller, five global voltage references, a TDC, a temperature sensor, and a band-gap based current reference. The ASIC has been fabricated with TSMC m mixed-signal CMOS technology and occupies an area of mm. The TDC shows a resolution mm of 95.5 ps, a precision of 600 ps at full width half maximum W. In acquisition (FWHM), and a power consumption of mode, the total power consumption of every pixel is W. An equivalent noise charge (ENC) of at maximum gain and negative polarity conditions has been measured at room temperature.
关键词： gamma-ray detectors,low-power electronics,Analog-digital conversion,semiconductor radiation detectors,application specific integrated circuits,positron emission tomography,energy resolution
更新于2025-09-23 15:19:57
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Temperature-dependent electrical properties of <i>β</i> -Ga <sub/>2</sub> O <sub/>3</sub> Schottky barrier diodes on highly doped single-crystal substrates
摘要： Beta-phase gallium oxide (β-Ga2O3) Schottky barrier diodes were fabricated on highly doped single-crystal substrates, where their temperature-dependent electrical properties were comprehensively investigated by forward and reverse current density – voltage and capacitance – voltage characterization. Both the Schottky barrier height and the ideality factor showed a temperature-dependence behavior, revealing the inhomogeneous nature of the Schottky barrier interface caused by the interfacial defects. With a voltage-dependent Schottky barrier incorporated into thermionic emission theory, the inhomogeneous barrier model can be further examined. Furthermore, the reverse leakage current was found to be dominated by the bulk leakage currents due to the good material and surface quality. Leakage current per distance was also obtained. These results can serve as important references for designing efficient β-Ga2O3 electronic and optoelectronic devices on highly doped substrates or epitaxial layers.
关键词： power electronics,Schottky barrier diode,wide bandgap material,gallium oxide
更新于2025-09-19 17:15:36
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Perspective: Ga <sub/>2</sub> O <sub/>3</sub> for ultra-high power rectifiers and MOSFETS
摘要： Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics with capabilities beyond existing technologies due to its large bandgap, controllable doping, and the availability of large diameter, relatively inexpensive substrates. These applications include power conditioning systems, including pulsed power for avionics and electric ships, solid-state drivers for heavy electric motors, and advanced power management and control electronics. Wide bandgap (WBG) power devices offer potential savings in both energy and cost. However, converters powered by WBG devices require innovation at all levels, entailing changes to system design, circuit architecture, qualification metrics, and even market models. The performance of high voltage rectifiers and enhancement-mode metal-oxide field effect transistors benefits from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. Reverse breakdown voltages of over 2 kV for β-Ga2O3 have been reported, either with or without edge termination and over 3 kV for a lateral field-plated Ga2O3 Schottky diode on sapphire. The metal-oxide-semiconductor field-effect transistors fabricated on Ga2O3 to date have predominantly been depletion (d-mode) devices, with a few demonstrations of enhancement (e-mode) operation. While these results are promising, what are the limitations of this technology and what needs to occur for it to play a role alongside the more mature SiC and GaN power device technologies? The low thermal conductivity might be mitigated by transferring devices to another substrate or thinning down the substrate and using a heatsink as well as top-side heat extraction. We give a perspective on the materials’ properties and physics of transport, thermal conduction, doping capabilities, and device design that summarizes the current limitations and future areas of development. A key requirement is continued interest from military electronics development agencies. The history of the power electronics device field has shown that new technologies appear roughly every 10-12 years, with a cycle of performance evolution and optimization. The older technologies, however, survive long into the marketplace, for various reasons. Ga2O3 may supplement SiC and GaN, but is not expected to replace them.
关键词： MOSFETs,β-Ga2O3,rectifiers,power electronics,thermal conductivity,Gallium oxide,Ga2O3,doping,wide bandgap semiconductors,military electronics
更新于2025-09-16 10:30:52
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[IEEE 2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Erlagol (Altai Republic), Russia (2019.6.29-2019.7.3)] 2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Distributed Series Impedance Devices Based on Controlled Transformer
摘要： The principles of designing of distributed series transformer with (DSI) based on impedance devices adjustable transformation ratio are considered. Analytical expressions for describing electromagnetic processes in various DSI schemes are obtained. The approaches to controlling of reactive power with adjustable transformer are described. Mathematical DSI model DSI based on controlled transformer in Matlab Simulink program is proposed and evaluated.
关键词： control,Power,compensation,power electronics,transformer
更新于2025-09-16 10:30:52
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High-Temperature Analysis of GaN-based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules
摘要： The InGaN/GaN MQW structure is demonstrated as a possible solution for high-temperature photodiode applications. High temperature spectral and noise analysis of InGaN/GaN MQW structure are performed for the potential integration as a detector in future power electronics applications. The spectral response was measured under photovoltaic and bias modes for the temperature range of 77 - 800 K. A peak spectral responsivity of 27.0 mA/W at 440 nm at 500 K is recorded. The peak external quantum efficiency of the device was calculated to be in the range of 5 - 8 % in the temperature range 77 - 800 K. The photodetector sensitivity of the structure is quantified using the material figure of merit parameter, D* for different temperature and biased voltages. A peak detectivity of 4 x 108 cmHz1/2W-1 is observed at 800 K with zero bias at 440 nm.
关键词： quantum well devices,power electronics,High-temperature,photodiode,optocouplers
更新于2025-09-16 10:30:52
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Fault Tolerant Control System for Photovoltaic Panels Application
摘要： The paper presents a solution to control the power delivery system in a microgrid in which the primary energy source is using photovoltaic panels. The proposed mathematical models describe the operation of the main system blocks and are used as reference models in the fault detection mechanism. Using a complex control strategy, the generated power is controlled and the effects of the disturbances which occur in the system, including the faults, are rejected, making the proposed solution a robust and a fault tolerant one. The integrated control solution contains algorithms for the appropriate control of both the boost DC/DC converter and of the single phase inverter blocks. The proposed approaches are directed toward developing algorithms suitable for real-time implementation on 32 bit ARM processors.
关键词： Power Delivery System,Power Electronics Control,32 bit ARM (Advanced RISC Machine) processor,Microgrids,Renewable Energy Systems,Single Phase Inverter,Fault Detection
更新于2025-09-12 10:27:22
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Study on Conversion Losses of Several Converter Topologies Used in Grid Connected Photovoltaic System
摘要： For PV applications, many studies focus on maximum power extraction without evaluating losses in the conversion chain. In this research, a comparison between 3 grid-connected converters will be conducted. The 3 topologies boost-inverter, inverter-transformer and boost inverter structures will be studied especially in the point of view of losses. This comparison is intended to observe the performance of each structure in the function of the delivered power. Although each structure has its own feature in terms of galvanic isolation and geometric size, it is interesting to compare the losses and efficiency of each structure in order to select the appropriate application. The circuit model is simulated using PSIM software which already includes the thermal module to estimate the switching and conduction losses of power switches. The source of each topology is photovoltaic modules and the control of the circuits include the MPPT feature to absorb the optimum power from the PV modules.
关键词： Topology of conversion,Power electronics,Photovoltaic system,Conversion losses,Grid connected,Solar energy
更新于2025-09-12 10:27:22
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A New Approach to H-Infinity Control for Grid-Connected Inverters in Photovoltaic Generation Systems
摘要： The present study investigates the stability problem of the grid-connected inverters (GCIs) for possible variations in grid impedance. A new type of H1 control method is proposed for the current control loop of inverters, where the third weighting function is determined using the game theory. The proposed method is applied to the GCI in a photovoltaic system and its response to variations in grid impedance is investigated. Computer simulations conducted for comparison of H1 and PI controller indicate the effectiveness of the proposed control algorithm. Simulation results also show that the proposed algorithm significantly outperforms the PI controller under the conditions of varying grid impedance.
关键词： solar energy,photovoltaic power generation,robust control,power electronics,grid-connected inverters,weighting function,game theory,H-in?nity control
更新于2025-09-11 14:15:04
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[IEEE 2019 5th International Conference on Event-Based Control, Communication, and Signal Processing (EBCCSP) - Vienna, Austria (2019.5.27-2019.5.29)] 2019 5th International Conference on Event-Based Control, Communication, and Signal Processing (EBCCSP) - Modelling a redefined architecture for concentrated photovoltaic power plant
摘要： The whole research projects that concern the concentrated photovoltaic (CPV) are systematically about the yield improvement of the cell. The positioning of the work presented here is at the cell interconnections for achieving a stable DC bus to extract the maximum power from individual cells. This architecture minimizes interactions and limitations between cells and string. The main goal is to replace cell interconnection by a high-gain boost-mirror, in order to improve the energy efficiency of CPV installations. This paper presents both, the new global architecture and the structural optimization of a DC-DC converter for concentrated photovoltaic power plant. After the presentation of the architecture used for CPV power plant, a reference converter and a boost-mirror are presented. Both converters are sized to the field of CPV power plant (capacitors, intercellular transformer, control etc.). Then the optimization of the complete converter is presented.
关键词： control,Power electronics,CPV,TSOOBOOST converter
更新于2025-09-11 14:15:04
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High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules
摘要： commercial light emitting diode (LeD) materials - blue (i.e., inGan/Gan multiple quantum wells (MQWs) for display and lighting), green (i.e., inGan/Gan MQWs for display), and red (i.e., Al0.05Ga0.45in0.5p/Al0.4Ga0.1in0.5P for display) are evaluated in range of temperature (77–800) K for future applications in high density power electronic modules. the spontaneous emission quantum efficiency (QE) of blue, green, and red LED materials with different wavelengths was calculated using photoluminescence (pL) spectroscopy. the spontaneous emission Qe was obtained based on a known model so-called the ABc model. this model has been recently used extensively to calculate the internal quantum efficiency and its droop in the III-nitride LED. At 800 K, the spontaneous emission quantum efficiencies are around 40% for blue for lighting and blue for display LED materials, and it is about 44.5% for green for display LED materials. The spontaneous emission QE is approximately 30% for red for display LED material at 800 K. The advance reported in this paper evidences the possibility of improving high temperature optocouplers with an operating temperature of 500 K and above.
关键词： high temperature,LED materials,power electronics,quantum efficiency,photoluminescence
更新于2025-09-11 14:15:04