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Effect of substrate thickness on coating roughness Ti/AlTiN during interaction process Parameter
摘要： Ti/TiAlN coatings were deposited on tungsten carbide substrates and consist of the target Ti0.5Al0.5 using sputtering system is one of the main techniques which done be coating substrate. This research aimed is to develop the model a PVD magnetron sputtering process that can predict the relationship between process input parameters and the resulting coating properties and performance. RSM Response Surface Methodology was used, one of the most cost-effective and practical techniques to develop the process model. The influence of substrate thickness on the structural properties of the coatings was investigated and the effect of bias voltage on the microstructure was investigated. The number of crystallite grain size reduced with the increase of the bias voltage then reduce minimum roughness 0.07157 (μm) and became maximum roughness 0.7856 (μm). The crystalline grain size of the coatings increased as the bias voltage was raised from 50 to 75 V, and then decreased with further increase of the bias voltage.
关键词： interaction,PVD,Sputtering,surface roughness,RSM
更新于2025-09-04 15:30:14
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Unipolar Nonvolatile Resistive Switching in Pt/MgO/Ta/Ru Structures Deposited by Magnetron Sputtering
摘要： The recent realization of memristors, nanodevices exhibiting non-volatile resistive switching, has sparked tremendous interest for applications in fields such as nonvolatile memories. Here we report unipolar resistive switching in Pt/MgO/Ta/Ru structures, with an oxide barrier thickness of only 15 nm. No electroforming process was required to achieve resistive switching and an ohmic conduction mechanism is associated with the ON state. We observed an inverse dependence of the ON state resistance on the SET current compliance and average values of 1.61 V and 1.38 V for the SET and RESET voltages, respectively. We show the stability of the switching for over 40 cycles and a clear separation of the ON (101 Ω) and OFF (102 Ω) states during at least 104 s.
关键词： Memristors,Magnetron Sputtering,Magnesium Oxide,Resistive Switching
更新于2025-09-04 15:30:14
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Bandgap bowing in crystalline (ZnO) <sub/> 1? <i>x</i> </sub> (GaN) <sub/><i>x</i> </sub> thin films; influence of composition and structural properties
摘要： Thin films of (ZnO)1?x(GaN)x with an optical bandgap between 3.3 and ～2.4 eV at room temperature for 0 ≤ x ≤ 0.2 have been grown by magnetron sputtering on (0001)-sapphire substrates. A strong dependence of the bandgap shrinkage on x for low values (x ≤ 0.07) not previously reported enables bandgap-tuned films of high crystal quality with limited distortion of the ZnO matrix suitable for optoelectronic applications. X-ray diffraction, transmission electron microscopy and Rutherford backscattering spectrometry all show a single phase and highly crystalline films. The a- and c-lattice constants are found to be 3.252 and 5.224 ? for x = 0.15, i.e. larger than that predicted by Vegard’s law. The films are highly c-axis oriented and exhibit a good heteroepitaxial relationship with the sapphire substrate, growing predominantly with aligned domains. A distinct shift in optical absorption is attributed to a shift in the bandgap, where compositions of x = 0.07 to x = 0.2 all result in bandgaps around or below 2.5 eV, while a lower GaN content increases the optical bandgap towards that of ZnO. This strong dependence of the bandgap shrinkage on x for low values (x ≤ 0.07) enables bandgap-tuned films of high crystal quality with limited distortion of the ZnO matrix.
关键词： magnetron sputtering,bandgap bowing,ZnO,GaN,alloy
更新于2025-09-04 15:30:14
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Effect of Deposition Method on Valence Band Offsets of SiO <sub/>2</sub> and Al <sub/>2</sub> O <sub/>3</sub> on (Al <sub/>0.14</sub> Ga <sub/>0.86</sub> ) <sub/>2</sub> O <sub/>3</sub>
摘要： There are often variations in reported valence band offsets for dielectrics on semiconductors and some of the reasons documented include metal or carbon contamination, interfacial disorder, variations in dielectric composition, thermal conditions, strain, and surface termination effects. In this paper we show that there are differences of up to 1 eV in band alignments for the common gate dielectrics SiO2 and Al2O3 on single crystal (Al0.14Ga0.86)2O3, depending on whether they are deposited by sputtering or Atomic Layer Deposition. In the case of Al2O3, this changed the band alignment from nested (type I) to staggered gap (type II). The valence band offset at each heterointerface was measured using X-Ray Photoelectron Spectroscopy and was determined to be ?0.85 ± 0.15 eV for sputtered Al2O3 and 0.23 ± 0.04 eV for ALD Al2O3 on β-(Al0.14Ga0.86)2O3, while for SiO2 it was 0.6 ± 0.10 eV for sputtered and 1.6 ± 0.25 eV for ALD. These results are consistent with recent results showing that the surface of Ga2O3 and related alloys are susceptible to severe changes during exposure to energetic ion environments.
关键词： Al2O3,(Al0.14Ga0.86)2O3,SiO2,valence band offsets,Atomic Layer Deposition,X-Ray Photoelectron Spectroscopy,sputtering
更新于2025-09-04 15:30:14
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Investigation of Interface Diffusion in Sputter Deposited Gd0.1Ce0.9O1.95 Thin Buffer Layers on Y-Stabilized Zirconia Crystalline Substrates for Solid Oxide Cells Applications
摘要： This paper presents the results concerning the investigation of the morphological and structural properties of Gd0.1Ce0.9O1.95 layers deposited on crystalline (111) YSZ subtrates by RF magnetron sputtering. Room temperature as-grown samples have been annealed at different temperatures from 600°C to 1300°C. Atomic Force Microscopy analysis shows an increase in the average grain size dimensions with increasing annealing temperatures. X-Ray Diffraction measurements indicates a preferential growth of the grains along the (111) direction with a decrease in the evaluated c-axis as a function of the annealing temperature, probably related to an over-oxidation of the samples. X-Ray Reflectivity studies, performed on thin layers annealed at temperatures from 700-1000°C, points out the presence of zones with different densities and roughness at the layer/substrate interface and at the layer/vacuum surface. The behaviour of these zones as a function of temperature has been investigated. The obtained results seem to exclude the presence of consistent inter-diffusion phenomena at the GDC/YSZ interface.
关键词： Solid oxide cells,X-ray reflectivity,Reciprocal space map,RF magnetron sputtering,Yttrium stabilized Zirconia,Gadolinium doped Ceria,Interdiffusion
更新于2025-09-04 15:30:14