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AIP Conference Proceedings [Author(s) SILICONPV 2018, THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS - Lausanne, Switzerland (19–21 March 2018)] - Understanding the optics of industrial black silicon
摘要： Industrial scale black silicon texturing has become a topic of increasing importance as a method for enabling lower cost multicrystalline silicon wafers through diamond wire sawing, as well as for its potential to provide improved efficiencies through enhanced optical characteristics. Two different texturing processes have emerged as candidates for mainstream industrial uptake, metal catalyzed chemical etching (MCCE) and reactive ion etching (RIE). However, these techniques can produce substantially different textures and both provide a wide parameter space allowing for various feature shapes and sizes to be produced. The surface texture not only determines the total reflectance of a solar cell, but also impacts the light trapping and subsequent absorption through scattering. Here, we carry out a detailed analysis on a representative range of both MCCE and RIE textures on multiple substrate types in order to further develop the fundamental understanding of how these specific surface morphologies impact the optical characteristics. This will better enable integration with other process conditions as well as optimization between optical and electrical requirements.
关键词： black silicon,surface morphology,RIE,MCCE,optical characteristics
更新于2025-10-22 19:40:53
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Influence of Reactive Ion Etching on THz Transmission and Reflection Properties of NiCr Film Deposited on a Dielectric Substrate
摘要： Enhanced terahertz (THz) absorption of NiCr film deposited on a dielectric substrate has been proven by applying a reactive ion etching (RIE) treatment to the dielectric film. Nano-scale nickel-chromium (NiCr) thin films are deposited on RIE treated silicon dioxide (SiO2) dielectric substrates to study the transmission and reflection characteristics. Experimental results suggest that both transmission and reflection of NiCr film are weakened by the RIE treatment. The most significant decrease of transmission is observed in (1 ~ 4) THz while that of reflection occurs in (1.7 ~ 2.5) THz band. The decrease of both transmission and reflection is more significant for NiCr film with higher thickness. The RIE treatment, which induces a roughened surface of SiO2 substrate and increases the effective surface area of NiCr film, enhances the absorption and weakens the transmission and reflection of THz radiation.
关键词： NiCr thin film,transmission,RIE,THz,reflection,absorption
更新于2025-09-23 15:21:01
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1200nma??Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation
摘要： In this paper, the quantum dot intermixing (QDI) technique previously developed for 1550nm-band InAs/InAlGaAs quantum dot (QD) was applied to 1200nm-band InAs/GaAs QD. Three methods of defect introduction for triggering the QDI were employed such as ICP-RIE (Ar+) and ion implantation (Ar+ and B+). As a result, about 80nm PL peak wavelength shift was obtained for ICP-RIE when annealing was performed at 575 °C, after etching down to 450 nm to the QD layer. On the other hand, about 110nm PL peak wavelength shift was obtained for B+ ion implantation at an acceleration energy of 120 keV and a dose of 1.0×1014 /cm2 and subsequent annealing. Cross sectional image analyses by Scanning Transmission Electron Microscope (STEM) and Energy-Dispersive X-ray Spectroscopy (EDX) clarified the modification of InAs QD structures by the QDI process.
关键词： intermixing,InAs/GaAs quantum dot,ICP-RIE,rapid thermal annealing,ion implantation
更新于2025-09-23 15:19:57
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[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation
摘要： In this paper, we applied the quantum dot intermixing (QDI) technique developed for 1550nm-band InAs QD to 1300nm-band InAs/GaAs QD. Two methods of defect introduction for QDI were employed such as ICP-RIE (Ar+) and ion implantation (B+). As a result, about 80nm PL wavelength peak shift was obtained for ICP-RIE when annealing was performed at 575 (cid:933), after etching down to 450 nm to the QD layer. On the other hand, about 110nm wavelength shift was obtained for B+ implantation at an acceleration voltage of 120 keV and a dose of 1.0 × 1014 /cm2 and subsequent annealing.
关键词： ion implantation,ICP-RIE,QDI,InAs/GaAs QD
更新于2025-09-19 17:13:59
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Fast smoothing on diamond surface by inductively coupled plasma reactive ion etching
摘要： The synergetic effects of surface smoothing exhibited during the inductively coupled plasma reactive ion etching (ICP-RIE) of free-standing polycrystalline diamonds (PCDs) were investigated. Changing the assistive gas types generated variable surface oxidation states and chemical environments that resulted in different etching rates and surface morphologies. The main reaction bond mechanism (C–O) during ICP-RIE and the ratio of C–O–C/O–C=O associated with the existence of a uniform smooth surface with root mean square (RMS) roughness of 2.36 nm were observed. An optimal process for PCD smoothing at high etching rate (4.6 lm/min) was achieved as follows: 10% gas additions of CHF3 in O2 plasma at radio frequency power of 400 W. The further etched ultra-smooth surface with RMS roughness <0.5 nm at etching rate of 0.23 lm/min that being produced by transferring this optimum recipe on single crystal diamonds with surface patterns confirmed the effectiveness of the fast smoothing approach and its feasibility for diamond surface patterning.
关键词： surface smoothing,diamond,etching rate,ICP-RIE,surface morphology
更新于2025-09-12 10:27:22
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[IEEE 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2018) - Nagoya, Japan (2018.9.9-2018.9.14)] 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Characteristics of VOx Microbolometer on Si<inf>3</inf>N4/SiO<inf>2</inf> Membrane Fabricated by Deep-RIE and XeF2 Vapor Etching for THz-detectors
摘要： VOx thin films were fabricated on Si3N4/SiO2/Si substrates by metal-organic decomposition (MOD). Then, a VOx microbolometer was fabricated on a Si3N4/SiO2 membrane. A membrane was realized by dry etching of the backside of the Si substrate using a Deep-RIE and XeF2 vapor etching with a good reproducibility. The DC sensitivity of the bolometer on membrane was 2310 W-1. This value was about 15 times higher than that of the VOx microbolometer on the Si3N4/SiO2/Si substrate and about two orders of magnitude higher than that of the Bi microbolometer on a dielectric substrate.
关键词： Si3N4/SiO2 membrane,THz-detectors,VOx microbolometer,Deep-RIE,XeF2 vapor etching
更新于2025-09-09 09:28:46