- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Ion Implantation - Research and Application || MeV Electron Irradiation of Ion-Implanted Si-SiO2 Structures
摘要： The effect of (10–25) MeV electron irradiation on Si‐SiO2 structures implanted with different ions (Ar, Si, O, B, and P) has been investigated by different methods, such as deep‐level transient spectroscopy (DLTS), thermo‐stimulated current (TSCM), Rutherford backscattering (RBS), and soft X‐ray emission spectroscopy (SXES). It has been shown that in double‐treated Si‐SiO2 structures, the defect generation by high‐energy electrons depends significantly on the location of preliminary implanted ions relative to the Si‐SiO2 interface as well as on the type (n‐ or p‐Si) of silicon wafer. SiO2 surface roughness changes, induced by ion implantation and high‐energy electron irradiation of Si‐SiO2 structures, are observed by the atomic force microscopy (AFM). Si nanoclusters in SiO2 of ion‐implanted Si‐SiO2 structures generated by MeV electron irradiation is also discussed.
关键词： ion implantation,Si nanoclusters,MeV electron irradiation,Si‐SiO2 structures,radiation defects
更新于2025-09-23 15:19:57
-
Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling
摘要： At moderately elevated temperatures, radiation defects in SiC exhibit pronounced dynamic annealing, which remains poorly understood. Here, we study 3C-SiC bombarded at 100°C with pulsed beams of 500 keV Ar ions. Radiation damage is monitored by a combination of X-ray diffraction, Raman scattering, and ion channeling. Similar damage buildup behavior but with different defect relaxation time constants, ranging from ～1 to ～6 ms, is observed for the different types of lattice defects probed by these techniques. A correlation between relaxation times and the nature of the defects is proposed. These results reveal additional complexity of radiation defect dynamics in SiC and demonstrate that results of different defect characterization techniques are needed for a better understanding of dynamic annealing processes in solids.
关键词： X-ray diffraction,Ion channeling,Raman scattering,Dynamic annealing,Radiation defects,3C-SiC
更新于2025-09-23 15:19:57
-
Changes in Critical Parameters of GdBa <sub/>2</sub> Cu <sub/>3</sub> O <sub/> 7? <i>x</i> </sub> HTS-2G Due to Swift-Ion Irradiation
摘要： The influence of the ion irradiation 132Xe27t (167 MeV), 86Kr17t (107 MeV), and 40Ar8t (48 MeV) on critical properties (Ic, Tc, ΔTc) of superconductor tapes of the 2-nd generation GdBa2Cu3O7(cid:1)x (SuperOx) are studied. It is shown that the critical current slightly increases and the width of the transition to the superconducting state reduces at low doses of Xe-irradiation. The obtained results enable the authors to estimate the radiation resistance of this HTS-2G tape to the used irradiation. As for the critical temperature, its decrease begins at considerably higher fluences than the decrease in the critical current, and ΔTc also changes. The decrease in the critical current can be explained by the irradiation-induced disorder of coherent boundaries between crystallites. At the instant of Tc to zero, it is possible to roughly estimate the track radii induced by the ions.
关键词： critical temperature,radiation defects,HTS-2G tape,critical current,radiation resistance
更新于2025-09-10 09:29:36