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An Effective Method for Recovering Nonradiative Recombination Loss in Scalable Organic Solar Cells
摘要： Regarded as a critical step in commercial applications, scalable printing technology has become a research frontier in the field of organic solar cells. However, inevitable efficiency loss always occurs in the lab-to-manufacturing translation due to the different fabrication processes. In fact, the decline of photovoltaic performance is mainly related to voltage loss, which is mainly affected by the diversity of phase separation morphology and the chemical structures of photoactive materials. Fullerene derivative indene-C60 bisadduct (ICBA) is introduced into a PBDB-T-2F:IT-4F system to control the active layer morphology during blade-coating process. Accordingly, as a symmetrical fullerene derivative, ICBA can regulate the crystallization tendency and molecular packing orientation and suppress charge carrier recombination. This ternary strategy overcomes the morphology issues caused by weaker shear impulse in blade-coating process. Benefiting from the reduced nonradiative recombination loss, 1.05 cm2 devices are fabricated by blade coating with a power conversion efficiency of 13.70%. This approach provides an effective support for recovering the voltage loss during scalable printing approaches.
关键词： nonradiative recombination loss,organic solar cells,large-area solar cells,blade coating
更新于2025-09-23 15:21:01
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Correlation between the open-circuit voltage and recombination loss at metal-silicon interfaces of crystalline silicon solar cells
摘要： For screen-printed silicon solar cells, optimization of the contact characteristics between the front metal electrode and silicon is very significant for realizing high efficiency. As technology advances, the solar cell efficiency has been steadily increased. Especially, as surface recombination becomes more important in high efficiency solar cells, understanding and controlling recombination in the metal contact area are necessary. Recombination at the metal-silicon interface is a major cause of the drop in the open-circuit voltage (Voc) of a solar cell. Thus far, the study of electrodes in silicon solar cells has been largely aimed at reducing the series resistance, and few studies on recombination due to electrodes have been performed. Quantitatively evaluating the recombination in electrodes to assess the effect on the efficiency is expected to become more important in the near future. In this paper, the contact characteristics of a screen-printed silver electrode and silicon interface were analyzed using saturation current density (Jo) measurements according to the surface doping concentration and firing temperature. The effects of the contact characteristics on Voc and recombination were also investigated. Experimental results showed that Jo.pass decreased with decreasing surface doping concentration and Jo.metal increased with increasing surface doping concentration and firing temperature. For quantitative analysis of Jo.metal, the size and distribution of Ag crystallites were observed using SEM and TEM, and the Ag concentration was analyzed by ICP-OES measurements. The larger Jo.metal was, the higher the Ag crystallite concentration, indicating that the Ag crystallites under the electrode increased Jo.metal. The effect of Jo.metal on the electrical characteristics of the solar cell was analyzed by calculating the change in the surface recombination velocity and the decreased width of Voc. Through this study, the recombination in the metallized area, which is expected to become increasingly important, and particularly the effects of the doping profile of the emitter region and silver crystallites on the surface recombination were quantitatively assessed. The amount of silver crystallites on the silicon wafer was quantitatively analyzed.
关键词： Screen-printed silicon solar cells,Saturation current density,Open-circuit voltage,Ag crystallites,Recombination loss,Metal-silicon interface
更新于2025-09-23 15:19:57
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Interface engineering with a novel n-type small organic molecule for efficient inverted perovskite solar cells
摘要： Fullerene derivatives are promising electron transporting materials for low-temperature processed inverted perovskite solar cells (PSCs). However, fullerene derivatives have some disadvantages, e.g. [6,6]-phenyl C61 butyric acid methyl ester (PCBM) has unmanageable morphology, low electron mobility and easily generated non-radiative recombination, which restrict the performance of PSCs. Herein, a novel n-type small organic molecule, homologous perylene diimide tetramer (HPDT), is designed and synthesized in this work to engineer the interface properties by enhancing interface contact, decreasing energetic barrier and recombination losses. HPDT shows suitable energy levels and high electron mobility and thus will increase the electron mobility when interface engineering in the inverted PSCs. Moreover, coating HPDT on top of perovskite prior to the deposition of PCBM is helpful to achieve a homogeneous pinhole-free PCBM layer, leading to enhanced power conversion efficiency from 17.38% up to 19.75% for inverted MAPbI3 PSCs along with a negligible hysteresis. Significantly, our results undoubtedly enable new guidelines in exploring n-type organic small molecules for high-performance PSCs.
关键词： electron transport material,perovskite solar cell,interface engineering,recombination loss
更新于2025-09-11 14:15:04