- 标题
- 摘要
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- 实验方案
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Synthesis and application of a surface ionic imprinting polymer on silica-coated Mn-doped ZnS quantum dots as a chemosensor for the selective quantification of inorganic arsenic in fish
摘要： A novel room temperature phosphorescence chemosensor probe has been successfully developed and applied to the selective detection and quantification of inorganic arsenic (As(III) plus As(V)) in fish samples. The prepared material (IIP@ZnS:Mn QDs) was based on Mn-doped ZnS quantum dots coated with (3-aminopropyl) triethoxysilane and an As(III) ionic imprinted polymer. The novel use of vinyl imidazole as a complexing reagent when synthesizing the ionic imprinted polymer guarantees that both inorganic arsenic species (As(III) and As(V)) can interact with the recognition cavities in the ionic imprinted polymer. After characterization, several studies were performed to enhance the interaction between the targets (As(III) and As(V) ions) and the IIP@ZnS:Mn QDs nanoparticles. The optimization and validation process showed that the composite material offers high selectivity (high imprinting factor) for inorganic arsenic species. The limit of quantification for total inorganic As was 29.6 μg kg?1, value lower than the EU/EC regulation limits proposed for other foodstuffs than fish, such as rice. The proposed method is therefore simple, requires short analysis times and offers good sensitivity, precision (inter-day relative standard deviations lower than 10%), and quantitative analytical recoveries. The method has been successfully applied to assess total inorganic arsenic in several fishery products, showing good agreement with the total inorganic arsenic concentration (As(III) plus As(V)) found after applying other advanced and expensive methods such those based on high-performance liquid chromatography hyphenated to inductively coupled plasma-mass spectrometry.
关键词： Ionic imprinted polymer,Silica-coated Mn-doped ZnS quantum dots,Fish,Room temperature phosphorescence,Chemosensor probe,Inorganic arsenic
更新于2025-09-16 10:30:52
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A 271.8 nm deep-ultraviolet laser diode for room temperature operation
摘要： We present a deep-ultraviolet semiconductor laser diode that operates under current injection at room temperature and at a very short wavelength. The laser structure was grown on the (0001) face of a single-crystal aluminum nitride substrate. The measured lasing wavelength was 271.8 nm with a pulsed duration of 50 ns and a repetition frequency of 2 kHz. A polarization-induced doping cladding layer was employed to achieve hole conductivity and injection without intentional impurity doping. Even with this undoped layer, we were still able to achieve a low operation voltage of 13.8 V at a lasing threshold current of 0.4 A.
关键词： room temperature operation,aluminum nitride substrate,deep-ultraviolet,laser diode,polarization-induced doping
更新于2025-09-12 10:27:22
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Purely Organic Phosphorescence Emitter-Based Efficient Electroluminescence Devices
摘要： A pure organic molecule 2,6-di(phenothiazinyl)naphthalene (DPTZN) with room temperature phosphorescence (RTP) features was developed. Remarkably, a triazine-benzimidazole based molecule TRZ-BIM can significantly improve the RTP efficiency of DPTZN in DPTZN:TRZ-BIM blend films. The photoluminescence (PL) quantum yield (PLQY) of 10wt% DPTZN:TRZ-BIM blend film is 38%. The RTP property of DPTZN:TRZ-BIM blend films was characterized by steady, time resolved and temperature dependent emission spectra. An organic light emitting diode (OLED) with 10wt% DPTZN:TRZ-BIM blend film as the emitting layer showed a high maximum external quantum efficiency (EQE) of 11.5%, current efficiency (CE) of 33.8 cd A?1 and power efficiency (PE) of 32.6 lm W?1. Herein, we have developed an efficient approach to achieve precious-metal free organic films that can be employed to fabricate high performance phosphorescence OLEDs.
关键词： electroluminescence,OLED,phosphorescent materials,organic phosphorescence,room temperature phosphorescence
更新于2025-09-12 10:27:22
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A room-temperature polariton light-emitting diode based on monolayer WS2
摘要： Exciton polaritons that arise through the strong coupling of excitons and cavity photons are used to demonstrate a wide array of fundamental phenomena and potential applications that range from Bose–Einstein-like condensation to analogue Hamiltonian simulators and chip-scale interferometers. Recently, the two-dimensional (2D) transition metal dichalcogenides (TMDs), because of their large exciton binding energies, oscillator strength and valley degree of freedom, have emerged as a very attractive platform to realize exciton polaritons at elevated temperatures. Achieving the electrical injection of polaritons is attractive both as a precursor to realizing electrically driven polariton lasers as well as for high speed light-emitting diodes (LEDs) for communication systems. Here, we demonstrate an electrically driven polariton LED that operates at room temperature using monolayer tungsten disulfide (WS2) as the emissive material. The extracted external quantum efficiency is ~0.1% and is comparable to recent demonstrations of bulk organic and carbon nanotube-based polariton electroluminescence (EL) devices. The possibility to realize electrically driven polariton LEDs in atomically thin semiconductors at room temperature presents a promising step towards achieving an inversionless electrically driven laser in these systems as well as for ultrafast microcavity LEDs using van der Waals (vdW) materials.
关键词： room temperature,transition metal dichalcogenides,exciton polaritons,van der Waals materials,electrically driven polariton LED
更新于2025-09-12 10:27:22
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Telecommunication wavelength confined Tamm plasmon structures containing InAs/GaAs quantum dot emitters at room temperature
摘要： We experimentally demonstrate gold microdisc structures that produce con?ned Tamm plasmons (CTPs)— interface modes between a metal layer and a distributed Bragg re?ector— resonant around 1.3 μm. Quantum dots grown within the structures show an order of magnitude increase in the photoluminescence emitted at room temperature. Varying the disc diameter, we show spectral tuning of the resonance and measure the dispersion relation as evidence of mode con?nement. The simplicity of fabrication and tuneability of these structures make CTPs an ideal platform for making scalable telecom devices based on quantum dots.
关键词： Tamm plasmons,room temperature,photoluminescence,quantum dots,telecom wavelengths
更新于2025-09-12 10:27:22
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Self-Healing Amorphous Polymers with Room-Temperature Phosphorescence Enabled by Boron-based Dative Bonds
摘要： Dative bonds are crucial for room-temperature phosphorescence (RTP) of metal complexes, which are nevertheless of high cost and toxicity. Here, we develop a class of amorphous RTP polymers based on non-metal dative bonds, through copolymerizing vinylphenylboronic acid and acrylamide derivates. Non-metal dative bonds, formed between boron and nitrogen/oxygen atoms, can populate triplet excitons through charge transfer and immobilize phosphors to suppress nonradiative relaxation, leading to effective RTP lifetime in air. Moreover, the dynamic nature of the dative bonds enables self-healing and anti-counterfeiting abilities of the RTP polymers. The concept of designing non-metal dative bonds can widely expand the horizon and application of RTP polymers.
关键词： self-healing,polymer,dative bond,room-temperature phosphorescence,boron
更新于2025-09-12 10:27:22
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InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300?K
摘要： Short-wave infrared (SWIR) detectors and emitters have a high potential value in several fields of applications, including the internet of things (IoT) and advanced driver assistance systems (ADAS), gas sensing. Indium Gallium Arsenide (InGaAs) photodetectors are widely used in the SWIR region of 1–3 μm; however, they only capture a part of the region due to a cut-off wavelength of 1.7 μm. This study presents an InAs p-i-n photodetector grown on a GaAs substrate (001) by inserting 730-nm thick inxAl1?xAs graded and AlAs buffer layers between the InAs layer and the GaAs substrate. At room temperature, the fabricated InAs photodetector operated in an infrared range of approximately 1.5–4 μm and its detectivity (D*) was 1.65 × 108 cm · Hz1/2 · W?1 at 3.3 μm. To demonstrate performance, the Sherlock Holmes mapping images were obtained using the photodetector at room temperature.
关键词： InxAl1?xAs graded buffer,InAs p-i-n photodetector,GaAs substrate,room temperature operation,Short-wave infrared (SWIR),InGaAs photodetectors
更新于2025-09-11 14:15:04
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Two-state lasing at room temperature in InAs/InP quantum dots
摘要： The two-state lasing conditions at room temperature in InAs/InP quantum dot (QD) lasers under a continuous wave electrical bias current are studied. It is found that excited state (ES) lasing is promoted by moderately decreasing spacer thickness and increasing dot-size dispersion in a QD stack, and the physical origins are due to the increased bottleneck effect and inhomogeneous broadening. Moreover, it is proved theoretically that ground state (GS) lasing with high inhomogeneous broadening may result in high phase and intensity noise at a high bias current. Therefore, an appropriate spacer thickness together with appropriate inhomogeneous broadening is critical to the GS and/or ES lasing, which helps an optimal design of laser geometry.
关键词： two-state lasing,spacer thickness,room temperature,InAs/InP quantum dots,inhomogeneous broadening,dot-size dispersion,intensity noise,continuous wave electrical bias,bottleneck effect,phase noise
更新于2025-09-11 14:15:04
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Fabrication of bonded LNOI waveguide structure on Si substrate using ultra-precision cutting
摘要： Heterogeneous integration of a LNOI waveguide device on a mature Si platform is interesting for creating future high density and multi-functional platform. This paper reports the fabrication of bent LNOI waveguide on Si substrate using surface activated bonding with Si nanoadhesive layer and post-bond ultra-precision cutting at room temperature. This bonding method demonstrates the sufficient bond strength between LN wafer and thermally grown SiO2 to withstand ductile-mode cutting for waveguide fabrication. In this work, the width, height, and bent radius of the ridged LNOI waveguide on Si substrate were approximately 5, 2.5, and 300 μm, respectively. These room-temperature bonding and cutting methods are expected to fabricate various heterogenous devices with large coefficient of thermal expansion mismatch between dissimilar materials, not just LNOI/Si waveguide devices.
关键词： room-temperature fabrication,ultra-precision cutting,surface activated bonding,LNOI waveguide,Si substrate
更新于2025-09-11 14:15:04
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Exciplex-forming derivatives of 2,7-di-tert-butyl-9,9-dimethylacridine and benzotrifluoride for efficient OLEDs
摘要： Strongly medium dependent capability to exhibit not only prompt/delayed thermally-activated fluorescence but also aggregation-induced phosphorescence or exciplex emission is demonstrated either for solutions or for solid samples of acridan-based luminophores. Multicolour emissions of different nature were detected and studied for donor-acceptor derivatives of 2- or 4-(trifluoromethyl)benzene and 2,7-di-tert-butyl-9,9-dimethylacridine containing trifluoromethyl groups in ortho and para positions. For the demonstration of one of possible applications, both compounds were tested in the emissive layers of exciplex-based OLEDs. In the best case, their high maximum current, power and external quantum efficiences of 29.5 cd/A, 29.1 lm/W and 8.2 % respectively were achieved for the device based on exciplex electroluminescence resulting from recombination of intermolecular charge transfer states formed on the interface of electron-donating and electron-accepting molecules used.
关键词： exciplex,acridan,thermally activated delayed fluorescence,room temperature phosphorescence,OLED
更新于2025-09-11 14:15:04