- 标题
- 摘要
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- 实验方案
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A Simplified Approach for Obtaining Optical Properties of VO <sub/>2</sub> Thin Films, and Demonstration of Infrared Shape-Shifting Devices
摘要： Micrometer-sized VO2-based devices with integrated resistive heaters of different configurations are fabricated. Quality of the VO2 films is confirmed by measuring the characteristic drop in transmittance and negative differential emissivity for these films. A two-interface model for optical transmittance, reflectance, and absorbance is presented. This method and analytic model presents an advantage over most typically used approaches in that it does not require direct measurements of the material’s optical constants to estimate transmittance. By combining the substrate and the VO2 film into one layer with a reduced optical admittance, the two-interface model is reduced to a single-layer model. Moreover, the present work demonstrates the implementation of the developed VO2-based devices in adaptive camouflage and shape-converting applications. Electrical pulses are used to program different emissivity states to convert geometric shapes inside a fully integrated VO2-based electro-optical window. This results in the reconfiguring of thermal images to either create new shapes, or shift from one to another.
关键词： shape-configuration,hysteresis,programming states,phase-change materials,smart materials
更新于2025-09-23 15:23:52
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Realization of a three-dimensional photonic topological insulator
摘要： Confining photons in a finite volume is highly desirable in modern photonic devices, such as waveguides, lasers and cavities. Decades ago, this motivated the study and application of photonic crystals, which have a photonic bandgap that forbids light propagation in all directions1–3. Recently, inspired by the discoveries of topological insulators4,5, the confinement of photons with topological protection has been demonstrated in two-dimensional (2D) photonic structures known as photonic topological insulators6–8, with promising applications in topological lasers9,10 and robust optical delay lines11. However, a fully three-dimensional (3D) topological photonic bandgap has not been achieved. Here we experimentally demonstrate a 3D photonic topological insulator with an extremely wide (more than 25 per cent bandwidth) 3D topological bandgap. The composite material (metallic patterns on printed circuit boards) consists of split-ring resonators (classical electromagnetic artificial atoms) with strong magneto-electric coupling and behaves like a ‘weak’ topological insulator (that is, with an even number of surface Dirac cones), or a stack of 2D quantum spin Hall insulators. Using direct field measurements, we map out both the gapped bulk band structure and the Dirac-like dispersion of the photonic surface states, and demonstrate robust photonic propagation along a non-planar surface. Our work extends the family of 3D topological insulators from fermions to bosons and paves the way for applications in topological photonic cavities, circuits and lasers in 3D geometries.
关键词： 3D photonic topological insulator,split-ring resonators,Dirac surface states,robust photonic propagation,topological bandgap
更新于2025-09-23 15:23:52
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One-out-of-two Quantum Oblivious Transfer based on Nonorthogonal States
摘要： This research proposes the first one-out-of-two quantum oblivious transfer (QOT) scheme that does not have a two-level structure and is not subject to Lo’s no-go theorem. Instead, the proposed scheme is a simple and efficient approach based on nonorthogonal states. The nonorthogonality causes one of a pair of messages to be unable to be measured to achieve the irreversible goal of discarding a message, resulting in a one-out-of-two selection effect. The proposed QOT protocol is therefore built directly on quantum resources rather than on a two-level structure in which two classical keys must first be created using quantum resources (all-or-nothing QOT) and then a one-out-of-two protocol is built from there. Furthermore, the proposed protocol allows Alice and Bob to test each other’s loyalty by comparing measurement results. In addition, the relationship with the no-go theorem is discussed in detail; this relationship is often overlooked in other studies. A security analysis demonstrates that the proposed protocol is secure against both external and internal attacks. In addition, an efficiency analysis shows that the proposed protocol is more efficient than other, two-level-structured protocols.
关键词： quantum oblivious transfer,security analysis,efficiency analysis,nonorthogonal states,Lo’s no-go theorem
更新于2025-09-23 15:23:52
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[IEEE 2018 International Semiconductor Conference (CAS) - Sinaia (2018.10.10-2018.10.12)] 2018 International Semiconductor Conference (CAS) - Interface Trap Effects in the Design of a 4H-SiC MOSFET for Low Voltage Applications
摘要： The current-voltage characteristics of a 4H-SiC MOSFET dimensioned for a breakdown voltage of 650 V are investigated by means of a numerical simulation study that takes into account the defect state distribution at the oxide-semiconductor interface in the channel region. The modelling analysis reveals that, for these low-voltage devices, the channel resistance component plays a key role in determining the MOSFET specific ON-state resistance (RON) under different voltage biases and temperatures. The RON value is in the order of a few mΩ×cm2.
关键词： numerical simulations,power devices,ON-state resistance,4H-SiC,defects states
更新于2025-09-23 15:23:52
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Interaction between in-gap states and carriers at the conductive interface between perovskite oxides
摘要： The 2D electron systems of SrTiO3/NdGaO3 (STO/NGO) and amorphous-LaAlO3/SrTiO3/NdGaO3 (a-LAO/STO/NGO) heterojunctions were explored. An obvious interaction between in-gap states (IGSs) and carriers was found. The IGSs can trap a large number of carriers and enhance carrier scattering. As a result of the high density of IGSs in STO, the conductivity of STO/NGO was severely weakened. However, for a-LAO/STO/NGO heterojunctions, the high carrier density can reduce the effect of IGSs through the electrostatic screening effect. The competition between IGSs and the screening effect of carriers results in an insulator–metal transition and a strange temperature dependence of carrier density. We also explored the interaction between IGSs and carriers theoretically. A mathematical description was proposed and the calculated results showed good agreement with experimental findings.
关键词： in-gap states,perovskite oxides interface,2D electron system,electrostatic screening effect
更新于2025-09-23 15:23:52
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Interfacial passivation of n-ZnO/p-Si heterojunction by CuI thin layer
摘要： The ZnO/Si heterojunction diode can be integrated with the Si process, which has attracted great attention in recent years. However, the large number of interface states at the ZnO/Si heterojunction interface could adversely affect its optoelectronic properties. Here, n-type ZnO thin film was deposited on p-Si substrate for formation of an n-ZnO/p-Si heterojunction substrate. To passivate the ZnO/Si interface, a thin CuI film interface passivation layer was inserted at the ZnO/p-Si heterojunction interface. Electrical characterization such as I–V and C–V characteristic curves confirmed the significant improvement of the heterojunction properties e.g. enhancement of forward current injection, reduction of reverse current and improvement of the rectification ratio. These results showed that the passivation of interface is critical for ZnO/Si heterojunctions.
关键词： CuI,heterojunction,interface states,electrical properties,ZnO/p-Si
更新于2025-09-23 15:23:52
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Sharp increase in the density of states in PbTe upon approaching a saddle point in the band structure
摘要： PbTe is a leading mid-range thermoelectric material with a zT that has been enhanced by, amongst other methods, band engineering. Here we present an experimental study of the Hall effect, quantum oscillations, specific heat, and electron microprobe analysis that explores the evolution of the electronic structure of PbTe heavily doped with the 'ideal' acceptor Na up to the solubility limit. We identify two phenomenological changes that onset as the electronic structure deviates from a Kane-type dispersion at around 180 meV; a qualitative change in the field dependence of the Hall effect indicative of an increase in the high-field limit and a change in the Fermiology, and a sharp increase in the density of states as a function of energy. Following consideration of three possible origins for the observed phenomenology we conclude that the most likely source is nonellipsoidicity of the L pocket upon approach to a saddle point in the band structure, which is evidenced directly by our quantum oscillation measurements. Comparison to density functional theory calculations imply that this evolution of the electronic structure may be a key contributor to the large thermopower in PbTe.
关键词： band structure,PbTe,Hall effect,density of states,thermoelectric,quantum oscillations
更新于2025-09-23 15:23:52
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Harvesting correlations from thermal and squeezed coherent states
摘要： We study the harvesting of entanglement and mutual information by Unruh-DeWitt particle detectors from thermal and squeezed coherent field states. We prove (for arbitrary spatial dimensions, switching profiles and detector smearings) that while the entanglement harvesting ability of detectors decreases monotonically with the field temperature T, harvested mutual information grows linearly with T. We also show that entanglement harvesting from a general squeezed coherent state is independent of the coherent amplitude, but depends strongly on the squeezing amplitude. Moreover, we find that highly squeezed states (i) allow for detectors to harvest much more entanglement than from the vacuum, and (ii) ensure that the entanglement harvested does not decay with their spatial separation. Finally, we analyze the spatial inhomogeneity of squeezed states and its influence on harvesting, and investigate how much entanglement one can actually extract from squeezed states when the squeezing is bandlimited.
关键词： Unruh-DeWitt detectors,thermal states,entanglement harvesting,quantum field theory,squeezed coherent states,mutual information
更新于2025-09-23 15:22:29
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Oxidized Metal Schottky Contacts on (010) β-Ga2 O 3
摘要： Oxidized Ir, Pd, Pt, Ag, and Au Schottky contacts (SCs) were fabricated on (010) β-Ga2O3 single crystal substrates via reactive rf sputtering using an O2:Ar plasma. The use of in-situ oxidizing conditions resulted in SCs with very high rectifying barriers in excess of 2.0 eV for all the metals investigated, representing an increase of 0.4 to 0.9 eV compared to the corresponding plain metal versions. Both the plain and oxidized metal SCs showed evidence of Fermi Level pinning with their laterally homogeneous barrier heights lying in narrow ranges of ~1.3 to 1.5 eV and ~2.2 to 2.4 eV, respectively, with little correlation with metal work function. This was attributed to the influence of metal-induced oxygen vacancies and gap states at the SC interface, respectively. The very high barriers of the oxidized SCs resulted in excellent high temperature performance with ~10 orders of magnitude of rectification at 180 oC, indicating the potential of this technique for the fabrication of high temperature unipolar devices.
关键词： Metal Induced Gap States,Fermi Level Pinning,Oxygen Vacancies,Semiconductor Interfaces,Schottky Diodes
更新于2025-09-23 15:22:29
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Electronic transition dipole moment and radiative lifetime calculations of lithium dimer ion-pair states
摘要： We present here a computational study of the lifetimes of the ion-pair n1Rt g , n = 3–6, states of lithium dimer. The lifetimes are calculated using ab initio electronic transition dipole moment functions and combination of experimental and ab initio potential curves. The ab initio calculations are carried out using the full configuration-interaction method. The lifetime calculations include the radiative contributions of all the allowed bound–bound and bound-free transitions to lower electronic states. In addition, to test the computational methods used in this work, we have calculated the lifetimes of levels of the lowest excited singlet, A1Rt u , state of lithium dimer.
关键词： Electronic transition dipole moment,Lithium dimer,Lifetime,Ion-pair states
更新于2025-09-23 15:22:29