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A supramolecular Cd( <scp>ii</scp> )-metallogel: an efficient semiconductive electronic device
摘要： A sonication-based strategy for the synthesis of a functional supramolecular Cd(II)-metallogel (CdA-OX) has been achieved through mixing cadmium(II) acetate dihydrate and oxalic acid dihydrate, a low molecular weight gelator (LMWG), in N,N-dimethyl formamide solvent at room temperature under atmospheric pressure. The mechanical properties of the supramolecular Cd(II)-metallogel were investigated through a rheological study. The pebble-like self-assembly hierarchical architecture of the supramolecular metallohydrogel was visualized through field emission scanning electron microscopy investigations. The electrical properties of the metallogel were thoroughly examined and indicate its semiconducting nature. Based on its conducting properties, the Cd(II)-metallogel was successfully applied to a Schottky barrier diode. Overall, this work is a novel instance of technologically challenging electronic device application of a Cd(II)-metallogel.
关键词： Schottky barrier diode,supramolecular Cd(II)-metallogel,sonication-based synthesis,electronic device,semiconducting nature
更新于2025-11-21 11:18:25
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A novel GaN-based lateral SBD with a TUG-AlGaN/GaN heterojunction
摘要： In this study, a novel GaN-based lateral Schottky barrier diode (SBD) with a thin upward graded AlGaN (TUG-AlGaN) barrier layer is proposed and investigated. The TUG-AlGaN layer upward graded from 0 to 0.50 mole fraction is used to replace the thick AlGaN layer of the heterojunction, which can reduce the distance from the 2-D electron gas (2DEG) to the Anode electrode, retain high density of 2DEG near the heterojunction, and eliminate the abrupt AlGaN/GaN conduction band offset at same time, subsequently can reduce the turn-on voltage and on-state voltage. The simulated results show that compared with the conventional SBD (with 25 nm Al0.23Ga0.77N layer), the proposed SBD achieves 0.32V reduction in turn-on voltage, and 1.21V reduction in on-state voltage. Meanwhile, although the proposed SBD doesn’t deliver obvious improvement in static characteristics when compared with the GaN-Based lateral field-effect rectifier (L-FER) (with 25 nm Al0.23Ga0.77N layer), the reverse recovery time of the proposed SBD is much smaller than that of the L-FER (with 25 nm Al0.23Ga0.77N layer). The outstanding static characteristics combined with excellent switching characteristics reveal its great potential for future power applications.
关键词： turn-on voltage,switching characteristics,thin upward graded AlGaN barrier layer,GaN-based lateral Schottky barrier diode
更新于2025-09-23 15:22:29
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An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
摘要： Gallium oxide (Ga2O3) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga2O3 semiconductor have been analyzed. And the recent investigations on the Ga2O3-based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga2O3-based SBD for power electronics application has been analyzed.
关键词： Breakdown electric field,Baliga’s figure of merit,On-resistance,Ultrawide bandgap semiconductor,Gallium oxide (Ga2O3),Power device,Schottky barrier diode (SBD)
更新于2025-09-23 15:22:29
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A simulation study of field plate termination in Ga <sub/>2</sub> O <sub/>3</sub> Schottky barrier diodes
摘要： In this work, the field plate termination is studied for Ga2O3 Schottky barrier diodes (SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field distribution are demonstrated. It is found that the optimal thickness increases with reverse bias increasing for all the three dielectrics of SiO2, Al2O3, and HfO2. As the thickness increases, the maximum electric field intensity decreases in SiO2 and Al2O3, but increases in HfO2. Furthermore, it is found that SiO2 and HfO2 are suitable for the 600 V rate Ga2O3 SBD, and Al2O3 is suitable for both 600 V and 1200 V rate Ga2O3 SBD. In addition, the comparison of Ga2O3 SBDs between the SiC and GaN counterpart reveals that for Ga2O3, the breakdown voltage bottleneck is the dielectric. While, for SiC and GaN, the bottleneck is mainly the semiconductor itself.
关键词： field plate,termination technique,Ga2O3,Schottky barrier diode
更新于2025-09-23 15:22:29
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Synergistic enhancement in the microelectronic properties of poly-(dioctylfluorene) based Schottky devices by CdSe quantum dots
摘要： This paper reports the potential application of cadmium selenide (CdSe) quantum dots (QDs) in improving the microelectronic characteristics of Schottky barrier diode (SBD) prepared from a semiconducting material poly-(9,9-dioctylfluorene) (F8). Two SBDs, Ag/F8/P3HT/ITO and Ag/F8-CdSe QDs/P3HT/ITO, are fabricated by spin coating a 10 wt% solution of F8 in chloroform and 10:1 wt% solution of F8:CdSe QDs, respectively, on a pre-deposited poly(3-hexylthiophene) (P3HT) on indium tin oxide (ITO) substrate. To study the electronic properties of the fabricated devices, current-voltage (I–V) measurements are carried out at 25 °C in dark conditions. The I–V curves of Ag/F8/P3HT/ITO and Ag/F8-CdSe QDs/P3HT/ITO SBDs demonstrate asymmetrical behavior with forward bias current rectification ratio (RR) of 7.42 ± 0.02 and 142 ± 0.02, respectively, at ± 3.5 V which confirm the formation of depletion region. Other key parameters which govern microelectronic properties of the fabricated devices such as charge carrier mobility (μ), barrier height (φb), series resistance (Rs) and quality factor (n) are extracted from their corresponding I–V characteristics. Norde’s and Cheung functions are also applied to characterize the devices to study consistency in various parameters. Significant improvement is found in the values of Rs, n, and RR by 3, 1.7, and 19 times, respectively, for Ag/F8-CdSe QDs/P3HT/ITO SBD as compared to Ag/F8/P3HT/ITO. This enhancement is due to the incorporation of CdSe QDs having 3-dimensional quantum confinement and large surface-to-volume area. Poole-Frenkle and Richardson-Schottky conduction mechanisms are also discussed for both of the devices. Morphology, optical bandgap (1.88 ± 0.5 eV) and photoluminescence (PL) spectrum of CdSe QDs with a peak intensity at 556 nm are also reported and discussed.
关键词： poly-(9,9-dioctylfluorene),charge carrier mobility,Schottky barrier diode,microelectronic properties,CdSe quantum dots
更新于2025-09-23 15:19:57
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Temperature-dependent electrical properties of <i>β</i> -Ga <sub/>2</sub> O <sub/>3</sub> Schottky barrier diodes on highly doped single-crystal substrates
摘要： Beta-phase gallium oxide (β-Ga2O3) Schottky barrier diodes were fabricated on highly doped single-crystal substrates, where their temperature-dependent electrical properties were comprehensively investigated by forward and reverse current density – voltage and capacitance – voltage characterization. Both the Schottky barrier height and the ideality factor showed a temperature-dependence behavior, revealing the inhomogeneous nature of the Schottky barrier interface caused by the interfacial defects. With a voltage-dependent Schottky barrier incorporated into thermionic emission theory, the inhomogeneous barrier model can be further examined. Furthermore, the reverse leakage current was found to be dominated by the bulk leakage currents due to the good material and surface quality. Leakage current per distance was also obtained. These results can serve as important references for designing efficient β-Ga2O3 electronic and optoelectronic devices on highly doped substrates or epitaxial layers.
关键词： power electronics,Schottky barrier diode,wide bandgap material,gallium oxide
更新于2025-09-19 17:15:36
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A Supramolecular Gel of Oxalic Acid-Monoethanolamine for Potential Schottky Barrier Diode Application
摘要： A functional supramolecular gel of oxalic acid and monoethanolamine (OXMEA) has been achieved through direct instant mixing of N,N-dimethyl formamide (DMF) solution of oxalic acid and pure monoethanolamine at room temperature under ambient condition. The rheological analysis established the viscoelastic semi-solid type nature of mechanically stable OXMEA supramolecular gel. The morphological pattern, imaged through field emission scanning electron microscopic investigation, explores the bean-seed like hierarchical architecture of the gel network. The semiconducting property of the gel was verified from band gap energy and conductivity estimation. The electrical charge transport property was also analyzed in the form of OXMEA gel based metal-semiconductor junction thin film device. The obtained nonlinear current-voltage characteristics of the device signify Schottky barrier diode nature of the synthesized gel. Overall, this work has been proof of development of semiconducting electronic device by OXMEA gel based gel medium.
关键词： Semiconductor,Morphology,Supramolecular Gel,Rheology,Schottky barrier diode
更新于2025-09-19 17:15:36
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Electrical Properties of High-Quality Synthetic Boron-Doped Diamond Single Crystals and Schottky Barrier Diodes on Their Basis
摘要： The temperature dependences of the specific resistance and Hall coefficient of high-quality synthetic boron-doped diamond single crystals grown via a high-pressure high-temperature method are studied. The concentration of acceptors in the (001) cut plates was varied in a range of 2 × 1015–3 × 1017 cm–3 by varying the concentration of boron in the growth mixture (0.0004–0.04 at %). Thin rectangular plates with the uniform concentration of boron and free from extended structural defects are cut out by a laser after the X-ray topography and mapping of UV luminescence. The concentrations of donors and acceptors in the samples are calculated from the data of the Hall effect and capacitance–voltage characteristics. The obtained results correlate with the concentration of boron in the growth mixture. The minimum compensation ratio of acceptors with donors (below 1%) is observed in the crystals grown with the concentration of boron in the growth mixture of 0.002 at %. The ratio increases when the amount of boron is increased or decreased. The samples grown at such a concentration of boron have the maximum mobility of charge carriers (2200 cm2/(V s) at T = 300 K and 7200 cm2/(V s) at T = 180 K). The phonon scattering of holes dominates throughout the range of temperatures (180–800 K), while the scattering by point defects (neutral and ionized atoms of the impurity) is insignificant. The diamond crystals which are grown from a mixture containing 0.0005–0.002 at % boron and have perfect quality and a lattice mechanism of scattering can be considered as a reference semiconductor.
关键词： Schottky barrier diode,semiconductor diamond,electrical properties
更新于2025-09-19 17:15:36
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Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics
摘要： The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, ?ow rate, and chamber pressure, etc. In particular, the microtrench at the bottom corner of the mesa sidewall was eliminated by a combination of ICP dry etching and tetramethylammonium hydroxide (TMAH) wet treatment. Finally, a highly anisotropic pro?le of the mesa sidewall was realized by using the optimized etch recipe, and a quasi-vertical GaN SBD was demonstrated, achieving a low reverse current density of 10?8 A/cm2 at ?10 V.
关键词： quasi-vertical,inductively coupled plasma (ICP),GaN,dry etch,sidewall pro?le,mesa,Schottky barrier diode (SBD)
更新于2025-09-19 17:13:59
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Generation and Thermal Properties of a Dual-Transverse-Mode With Dual-Polarization and Dual-Frequency by a Dual-Medium Microchip Laser
摘要： An AlGaN/GaN lateral reverse blocking current regulating diode (RB-CRD) with trench Schottky anode and hybrid trench cathode has been proposed and experimentally demonstrated on silicon substrate. The Schottky barrier diode (SBD) integrated in the anode exhibits a turn-on voltage of 0.7 V and a reverse breakdown voltage of 260 V. The hybrid trench cathode acts as a CRD, which is in series connection with the anode SBD. A knee voltage of 1.3 V and a forward operation voltage beyond 200 V can be achieved for the RB-CRD. The RB-CRD is capable of outputting an excellent steady current in a wide temperature range from 25 to 300 °C. In addition, the forward regulating current exhibits small negative temperature coefficients less than ? 0.152%/oC.
关键词： Reverse blocking current regulating diode (RB-CRD),AlGaN/GaN heterostructure,Schottky barrier diode (SBD)
更新于2025-09-11 14:15:04