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Self-powered and flexible perovskite photodiode/solar cell bifunctional devices with MoS2 hole transport layer
摘要： Hybrid organic-inorganic perovskites are highly attractive for the use in optoelectronic devices, but their instabilities should be solved before the practical applications. As one of the solutions, it is important to find a transport layer that can improve the stability and durability of the devices. Here, we first employ MoS2 for a hole transport layer (HTL) in high-performance flexible p-i-n-type perovskite photodiode (PD)/solar cell bifunctional devices (PPSBs) with co-doped graphene transparent conductive electrodes. The current of the PPSB increases by up to 106 times by illumination even at 0 V, meaning “self-powered”. The PPSB exhibits high responsivity and on/off ratio in a broad spectral range of ultraviolet to visible light at a PD mode and good photovoltaic properties at a solar cell mode. The photoresponse shows only 38 % degradation during 30 days, and the photo-stability is almost perfect under continuous light soaking for 100 h. Flexible PPSB exhibits excellent mechanical properties by maintaining ~57 % of its initial photocurrent even after 3000 bending cycles at a curvature radius of 4 mm. These results suggest that MoS2 films can be successfully used as a HTL in perovskites-based rigid/flexible optoelectronic devices.
关键词： photodiode,co-doping,MoS2,graphene,bifunctional,hole transport layer,perovskite,solar cell,self-powered
更新于2025-09-23 15:19:57
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Selfa??Powered Flexible TiO <sub/>2</sub> Fibrous Photodetectors: Heterojunction with P3HT and Boosted Responsivity and Selectivity by Au Nanoparticles
摘要： A novel inorganic–organic heterojunction (TiO2/P3HT (poly(3-hexylthiophene)) is easily prepared by a combination of anodization and vacuumed dip-coating methods, and the constructed flexible fibrous photodetector (FPD) exhibits high-performance self-powered UV–visible broadband photoresponse with fast speed, high responsivity, and good stability, as well as highly stable performance at bending states, showing great potential for wearable electronic devices. Moreover, Au nanoparticles are deposited to further boost the responsivity and selectivity by regulating the sputtering intervals. The optimal Au/TiO2/P3HT FPD yields an ≈700% responsivity enhancement at 0 V under 350 nm illumination. The sharp cut-off edge and high UV–visible rejection ratio (≈17 times higher) indicate a self-powered flexible UV photodetector. This work provides an effective and versatile route to modulate the photoelectric performance of flexible electronic devices.
关键词： TiO2/P3HT heterojunctions,Au nanoparticles,fiber photodetectors,flexible devices,self-powered
更新于2025-09-23 15:19:57
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Novel Self-Powered Photodetector with Binary Photoswitching Based on SnS <sub/><i>x</i> </sub> /TiO <sub/>2</sub> Heterojunctions
摘要： Binary photoresponse characteristics can realize the optical signal processing and logic operations. The UV photodetectors (PDs) with SnSx nanoflakes and TiO2 nanorod arrays (NRs) show a novel binary photoswitching behavior (change in current from positive to negative) by manipulating the light wavelength without external power source, utilizing the interfacial recombination of the photogenerated carriers in the type-I SnSx/TiO2 heterojunctions. The enhanced responsivity (R*) and detectivity and fast photoresponse time for self-powered SnSx/TiO2 PDs can be achieved by adjusting the phase ratio of SnS and SnS2 nanoflakes. The binary photoswitching in the self-powered UV PDs can be applied in the encrypted optical signal processing and imaging in some special conditions without external bias.
关键词： self-powered photodetector,SnSx/TiO2,binary photoresponse,heterojunctions
更新于2025-09-23 15:19:57
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A Monocharged Electret Nanogenerator-Based Self-Powered Device for Pressure and Tactile Sensor Applications
摘要： This study reports a self-powered pressure sensor based on a monocharged electret nanogenerator (MENG). The sensor exhibits great advantages in terms of high reliability, ease of fabrication, and relatively high sensitivity. The working mechanism of the MENG sensor is studied by both theoretical derivations and finite element analyses to determine the electric potential distribution during the device operation. The MENG sensor exhibits a stable open circuit voltage ≈10 V at a 30.8 kPa pressure and a corresponding sensitivity of 325 mV kPa?1. The stability testing result shows that the device has only ≈5% attenuation after 10 000 cycles of repeated testing at 30.8 kPa pressure. Furthermore, it is found that the MENG sensor responds not only to a dynamic force but also a static force. Finally, a sensor array consisting of nine MENG sensor elements is fabricated. The testing results from the sensor array also reveal that a single touch of the sensor element can immediately light up an LED light at the corresponding position. This device holds great promise for use in future tactile sensors and artificial skin applications.
关键词： electret nanogenerator,pressure and tactile sensor,self-powered pressure sensor
更新于2025-09-19 17:15:36
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Rapid and wide-range detection of NO <sub/>x</sub> gas by N-hyperdoped silicon with the assistance of a photovoltaic self-powered sensing mode
摘要： Wide dynamic range NOx sensors are vital for environment and health purposes, but few sensors could achieve wide range detection with ultralow and ultrahigh concentrations at the same time. In this article, the microstructured and nitrogen-hyperdoped silicon (N-Si) for NOx gas sensing is investigated systematically. Working by the change of surface conductivity, the sensor is ultra-sensitive to low concentration of NOx down to 11 ppb, and shows a rapid response/recovery time of 22/33 s for 80 ppb. When NOx concentration increases and exceeds a threshold value (10–50 ppm), an n–p conduction type transition is observed due to the inversion of the conduction type of major carriers, which limits the sensor’s dynamic range at high concentration. However, when the sensor works in a photovoltaic self-powered mode under the asymmetric light illumination (ALI), the limitation can be successfully overcome. Therefore, with the combination of the two working principles, a wide dynamic range stretching over six orders of magnitude (~0.011–4,000 ppm) can be achieved.
关键词： dynamic range,conduction type transition,asymmetric light illumination,hyperdoped silicon,self-powered gas sensing
更新于2025-09-19 17:13:59
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Asymmetric Contact Induced Self-Powered 2D In2S3 Photodetector towards High-Sensitivity and Fast-Response
摘要： Self-powered photodetectors have triggered extensive attention in recent years due to the advantages of high sensitivity, fast response, low power consumption, high level of integration and wireless operation. To date, most self-powered photodetectors are implemented through the construction of either heterostructures or asymmetric electrode material contact, which are complex to process and costly to produce. Herein, for the first time, we achieve self-powered operation by adopting geometrical asymmetry in the device architecture, where a triangular non-layered 2D In2S3 flake with asymmetric contact is combined with traditional photogating effect. Importantly, the device achieves excellent photoresponsivity (740 mA/W), high detectivity (1.56 × 1010 Jones), and fast response time (9/10 ms) under zero bias. Furthermore, the asymmetric In2S3/Si photodetector manifests long-term stability. Even after 1000 cycles of operation, the asymmetric In2S3/Si device displays negligible performance degradation. In sum, the above results highlight a novel route towards self-powered photodetectors with high performance, simple processing and structure in the future.
关键词： high sensitivity,fast response,asymmetric contact,Self-powered photodetectors,2D In2S3,photogating effect
更新于2025-09-19 17:13:59
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Self-powered, all-solution processed, trilayer heterojunction perovskite-based photodetectors
摘要： Heterostructures composed of nano-/micro-junctions, combining the excellent photon harvesting properties of nano-system and ultrafast carrier transfer of micro-system, have shown promising role in high-performance photodetectors. Here, in this paper a highly-sensitive trilayer in which the CdS nanorods (NRs) layer is sandwiched between ZnO/CsPbBr3 interface to reduce self-powered perovskite-based photodetector ITO/ZnO(70nm)/CdS(150nm)/CsPbBr3(200nm)/Au, ratio of 106 with a responsivity of 86 mA/W and a specific detectivity of 6.2×1011 Jones was obtained at zero bias under 85 μW/cm2 405 nm illumination, and its rise/decay time at zero bias is to the strong built-in potential and the internal driving electric-field, an ultra-high On/Off current 0.3/0.25 s. Therefore, the enhanced device performance strongly suggest the great potential of such the interfacial charge carriers’ recombination and the charge transport resistance, is presented. Due a kind of trilayer heterojunction devices for high-performance perovskite photodetectors.
关键词： On/Off current ratio,CdS nanorods (NRs) layer,trilayer heterojunction,specific detectivity,gradient energy alignment,Self-powered photodetector,high-performance
更新于2025-09-19 17:13:59
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High Responsivity and High Rejection Ratio Self-Powered Solar-Blind Ultraviolet Photodetector Based on PEDOT:PSS/β-Ga2O3 Organic/Inorganic p-n Junction
摘要： A high responsivity self-powered solar-blind deep UV (DUV) photodetector with high rejection ratio was proposed based on inorganic/organic hybrid p-n junction. Owing to the high crystalized β-Ga2O3 and excellent transparent conductive polymer PEDOT:PSS, the device exhibited ultrahigh responsivity of 2.6 A/W at 245 nm with a sharp cut off wavelength at 255 nm without any power supply. The responsivity is much larger than that of previous solar-blind DUV photodetectors. Moreover, the device exhibited an ultrahigh solar-blind/UV rejection ratio (R245 nm /R280 nm) of 103, which is two orders of magnitude larger than the average value ever reported in Ga2O3-based solar-blind photodetectors. In addition, the photodetector shows a narrow band-pass response of only 17 nm in width. This work might be of great value in developing high wavelength selective DUV photodetector with respect to low cost for future energy-efficient photoelectric devices.
关键词： Self-Powered,PEDOT:PSS/β-Ga2O3,Plasmonics and Optoelectronics,Organic/Inorganic p-n Junction,Energy Conversion and Storage,High Rejection Ratio,High Responsivity,Solar-Blind Ultraviolet Photodetector
更新于2025-09-19 17:13:59
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Flexible Self-Powered Real-Time Ultraviolet Photodetector by Coupling Triboelectric and Photoelectric Effects
摘要： The portable UV photodetector is used to remind human timely from the overexposure to UV radiation. However, the traditional UV photodetector cannot meet the practical demands and power supply problem hinders its further development. In this work, we demonstrated a flexible, transparent and self-powered UV photodetector, by coupling of triboelectric effect and photoelectric effect. The device integrates a flexible ZnO nanoparticles (NPs) UV photodetector, a transparent and flexible film based TENG (TFF-TENG), commercial chip resisters and LEDs on PET thin film. The TFF-TENG could harvest mechanical energy from finger tapping and sliding motion and power the ZnO NPs UV photodetector to realize self-powered detection. The voltage of the constant resistors connected with UV photodetector in series changes from 0.5 to 19 V under the UV light with power intensities increasing from 0.46 to 21.8 mW/cm2 and the voltage variation is reflected by the number of LEDs directly. The excellent flexibility and transparency of the device could extend its application scenarios; for example, such a portable device could be applied to real-time monitoring of the UV radiation to remind human from intense UV light.
关键词： flexible,triboelectric nanogenerator,self-powered sensor,transparent,UV photodetector
更新于2025-09-19 17:13:59
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Thermo‐Phototronic‐Effect‐Enhanced Photodetectors Based on Porous ZnO Materials
摘要： Self-powered ultraviolet (UV) photodetectors with metal–semiconductor–metal (MSM) structure have attracted extensive attention due to their simple configuration and the fact that they require no external power source. However, the stability of Schottky-contact-based ultraviolet photodetectors is still poor due to the difficulty of controlling the surface states in the semiconductor, where it is almost impossible to obtain the same Schottky barrier heights in different devices. An Ohmic-contacted self-powered ultraviolet photodetector with an MSM structure is constructed by utilizing porous ZnO, which can dramatically increase photodetection performance due to its thermo-phototronic effect. The photocurrent signals of the photodetector at room temperature are 4.88 and 11.25 μA, which can be increased to 5.33 and 13.70 μA, respectively. The underlying physical mechanism of the performance enhancement is revealed through band-diagram analysis. This work extends the types of ZnO material-based photodetectors and holds great potential for developing high-performance self-powered ultraviolet photodetectors.
关键词： thermo-phototronic effect,photodetectors,thermopotential,self-powered electronics,porous ZnO
更新于2025-09-19 17:13:59