- 标题
- 摘要
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- 实验方案
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Low-Temperature Graphene Growth by Forced Convection of Plasma-Excited Radicals
摘要： We developed the forced convection (FC)-PECVD method for the synthesis of graphene in which a specially designed blowing plasma source is used at moderate gas pressure (1-10 Torr) and the distribution of reactive radicals reaching the substrate surface can be controlled by forced convection. Self-limiting growth of graphene occurs on copper foil and monolayer graphene growth with few defects is achieved even at low temperature (<400 °C). We also demonstrated the enlargement of growth area using the scalable blowing plasma source. We expect that the FC-PECVD method overcomes the limitations of conventional low-temperature PECVD and provides a breakthrough for the achievement of industrial applications based on graphene.
关键词： low temperature growth,self-limiting growth,Graphene,forced-convection plasma CVD
更新于2025-09-23 15:23:52
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Thermal atomic layer etching: Mechanism, materials and prospects
摘要： In the semiconductors and related industries, the fabrication of nanostructures and nanopatterns has become progressive demand for achieving near-atomic accuracy and selectivity in etching different materials, particularly in ultra-thin gate dielectrics and ultra-thin channels used in field-effect transistors and other nanodevices below 10 nm scale. Atomic layer etching (ALE) is a novel technique for removing thin layers of material using sequential and self-limiting reactions. Different from most ALE processes using plasma-enhanced or other energetic particles-enhanced surface reactions, thermal ALE realizes isotropic atomic-level etch control based on sequential thermal-drive reaction steps that are self-terminating and self-saturating. Thermal ALE can be viewed as the reverse of atomic layer deposition (ALD), both of which define the atomic layer removal and growth steps required for advanced semiconductor fabrication. In this review, we focus on the concept and basic characteristics of the thermal ALE in comparison with ALD. Several typical thermal ALE mechanisms including fluorination and ligand-exchange, conversion-etch, oxidation and fluorination reactions are intensively introduced. The pros and cons of thermal ALE, plasma ALE, and traditional plasma etching are compared. Some representative materials and their typical thermal ALE processes are summarized. Finally, the outlook and challenges of thermal ALE are addressed.
关键词： Thermal atomic layer etching,Reaction mechanism,Atomic-scale precision,Atomic layer deposition,Self-limiting
更新于2025-09-23 15:22:29
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New Patterning Technology by Integrating Atomic Layer Deposition Process to the Etching Flow
摘要： We introduce a state-of-the-art patterning process developed by new patterning technology using Atomic Layer Deposition (ALD) towards 5/7 nm generation. In the patterning process, critical dimension (CD) shrink technique without CD loading is one of the key requirements. However, in the conventional CD shrink technique, CD loading can?t be solved in principle. To overcome this issue, by integrating ALD process into the etching flow, we developed a new CD shrink technique without causing CD loading. Furthermore, CD shrink amount can be precisely controlled by the number of ALD cycles while keeping the excellent CD shrink uniformity across a wafer. This is obtained by utilizing a conformal layer with characteristics of ALD?s self-limiting reaction, which is independent of the pattern variety.
关键词： patterning technology,self-limiting reaction,atomic layer deposition,critical dimension loading
更新于2025-09-19 17:15:36