- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Recent Developments Accelerating SiC Adoption
摘要： The benefits of SiC devices for use in power electronics has been long understood, and over 25 years of sustained development in materials and devices has brought adoption to a tipping point [1,15]. It takes the confluence of many separate developments to build the necessary momentum for accelerated adoption, and we will examine these factors.
关键词： SiC MOSFET,SiC reliability,SiC Schottky Diode,SiC gate oxide,SiC Cascode,Supercascode,Silicon Carbide,SiC,SiC packaging,SiC applications,SiC epitaxy,SiC substrates
更新于2025-09-09 09:28:46
-
Top-gated graphene field-effect transistors by low-temperature synthesized SiN <i> <sub/>x</sub></i> insulator on SiC substrates
摘要： Top-gated devices made from an epitaxial graphene film on a 4H-SiC substrate were fabricated. Atomic force microscopy and Raman spectroscopy results showed that a large-scale highly uniform monolayer graphene film was synthesized on the SiC substrate. A SiNx passivation film was deposited on a SiC graphene device as a top gate insulator by catalytic chemical-vapor deposition (Cat-CVD) below 65 °C. After the top gate electrode was formed on the SiNx film, no leakage current flowed between the gate and source electrodes. The transport characteristics showed clear ambipolar characteristics from 8 to 280 K, and the temperature dependences of the conductance and field-effect mobility of the devices implied that monolayer graphene devices can be successfully fabricated. Moreover, the position of the charge neutrality point after SiNx deposition was around 0 V, indicating p-doping characteristics. These results indicate that SiNx films synthesized by Cat-CVD can be used as gate insulators and that the carrier type may be controlled by adjusting the deposition conditions.
关键词： SiNx,Cat-CVD,field-effect transistors,graphene,SiC substrates
更新于2025-09-09 09:28:46