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AIP Conference Proceedings [AIP Publishing THE 7TH INTERNATIONAL CONFERENCE ON APPLIED SCIENCE AND TECHNOLOGY (ICAST 2019) - Karbala City, Iraq (27–28 March 2019)] THE 7TH INTERNATIONAL CONFERENCE ON APPLIED SCIENCE AND TECHNOLOGY (ICAST 2019) - Investigations of ZnO-NiO/PSi heterojunction for solar cell application
摘要： In this paper, ZnO-NiO nanocomposite has been successfully synthesized using chemical precipitation method .The structural properties were investigated using X-ray diffraction ( XRD) and field emission scanning electron microscope (FESEM) . XRD measurements confirms the formation of polycrystalline ZnO and NiO nanoparticles with a hexagonal and cubic structure respectively. The average grain size of ZnO-NiO nanocoposite estimated from FESEM was 60 nm . Heterojunction solar cell fabricated using ZnO-NiO nanocomposite on porous silicon by spray pyrolysis method shows open-circuit voltage (VOC) of 470 mV, short-circuit current density (ISC) of 39 mA/cm2, fill factor (FF) of 78.72% , and efficiency of 14.43%.
关键词： porous silicon,solar cell,chemical precipitation,ZnO-NiO nanocomposite,spray pyrolysis
更新于2025-09-19 17:13:59
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Bifacial IFO/(n+pp+)Cz-Si/ITO solar cells with full-area Al-alloyed BSF and Ag-free multi-wire metallization suitable for low-concentration systems
摘要： Bifacial solar cells have received considerable attention due to the potential to achieve higher energy yield compared to monofacial cells. However, in bifacial cells, p+-Si layers are usually produced by boron diffusion, which makes such cells more expensive compared to monofacial cells with a full-area screen-printed Al-alloyed Al-p+ back-surface-field (BSF). Recently, we have demonstrated proof-of-concept that bifacial cells, which, in addition, are also suitable for application in low-concentration systems (3–6 suns), can be produced from commercially available, standard monofacial SiNx/(n+pp+)Cz-Si/Al structures with full-area Al-p+-BSF. For this purpose, the residual Al paste was removed and a number of solar cells were prepared differing in the sheet resistance of the Al-p+-BSF (Rp+), which was varied from 14 Ω/sq to 123 Ω/sq by thinning the Al-p+ layer using one-sided etch-back process. Thinning of the Al-p+-BSF significantly improved the efficiency under 1-sun front/rear-side illumination: from 16.0%/7.5% (at Rp+ = 14 Ω/sq) to 17.5%/11.2% (at Rp+ = 81 Ω/sq). The equivalent efficiency at 1-sun front illumination and 20/50% albedo of 1-sun illumination increased from 17.7%/20.1% (at Rp+ = 14 Ω/sq) to 19.9%/23.5% (at Rp+ = 81 Ω/sq). In this paper, we present the results of systematic study of the developed bifacial cells. Thinning-induced changes in the properties of the cells are analyzed in detail. The critical aspects which might explain the performance of the developed cells are addressed. In addition, bifacial cells are compared with standard monofacial cells fabricated using the precursor of the same batch.
关键词： Ultrasonic spray pyrolysis,Transparent conductive oxide,Ag-cost reduction,Bifacial concentrator silicon solar cell,Multi-wire metallization,Al-alloyed BSF
更新于2025-09-19 17:13:59
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Theoretical Study of Proton Radiation Influence on the Performance of a Polycrystalline Silicon Solar Cell
摘要： The aim of this work is to study the behaviour of a silicon solar cell under the irradiation of di?erent ?uences of high-energy proton radiation (10 MeV) and under constant multispectral illumination. Many theoretical et experimental studies of the e?ect of irradiation (proton, gamma, electron, etc.) on solar cells have been carried out. These studies point out the e?ect of irradiation on the behaviour of the solar cell electrical parameters but do not explain the causes of these e?ects. In our study, we explain fundamentally the causes of the e?ects of the irradiation on the solar cells. Taking into account the empirical formula of di?usion length under the e?ect of high-energy particle irradiation, we established new expressions of continuity equation, photocurrent density, photovoltage, and dynamic junction velocity. Based on these equations, we studied the behaviour of some electronic and electrical parameters under proton radiation. Theoretical results showed that the defects created by the irradiation change the carrier distribution and the carrier dynamic in the bulk of the base and then in?uence the solar cell electrical parameters (short-circuit current, open-circuit voltage, conversion e?ciency). It appears also in this study that, at low ?uence, junction dynamic velocity decreases due to the presence of tunnel defects. Obtained results could lead to improve the quality of the junction of a silicon solar cell.
关键词： silicon solar cell,proton radiation,diffusion length,electrical parameters,carrier distribution,junction dynamic velocity
更新于2025-09-16 10:30:52
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Development of aluminum paste with/without boron content for crystalline silicon solar cells
摘要： Improvement of aluminum alloyed p?+?back surface ?elds (p?+?BSF) which is an essential requirement for achieving high ef?ciency silicon solar cells has been an important task. One of the ways to have better quality BSFs can be to introduce screen printable aluminum pastes with boron content. Two type of pastes were developed in this work and recipes were provided in detail: screen-printable aluminum paste without boron content (B-free-Al-paste), screen-printable aluminum paste with boron content (Al-B-paste). The ingredients of the pastes were optimized and basically evaluated in terms of alloying and impurity characteristics by measurement of sheet resistances, carrier lifetimes and SIMS analysis. Carrier lifetimes of the wafers processed by Al-B-paste maintained at around 300 μs relatively higher than the wafers processed by B-free-Al-paste. P-type silicon solar cells were fabricated using developed pastes and were compared with those of the cells fabricated by commercial aluminum pastes. Best ef?ciency of 17.8% was achieved with totally vacuum-less cell production process and Suns-Voc analysis were also carried out for fabricated solar cells.
关键词： silicon solar cell,boron doping,aluminum paste
更新于2025-09-16 10:30:52
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Application Of Artificial Neural Networks In Modeling Of Manufactured Front Metallization Contact Resistance For Silicon Solar Cells
摘要： This paper presents the application of artificial neural networks for prediction contact resistance of front metallization for silicon solar cells. The influence of the obtained front electrode features on electrical properties of solar cells was estimated. The front electrode of photovoltaic cells was deposited using screen printing (SP) method and next to manufactured by two methods: convectional (1. co-fired in an infrared belt furnace) and unconventional (2. Selective Laser Sintering). Resistance of front electrodes solar cells was investigated using Transmission Line Model (TLM). Artificial neural networks were obtained with the use of Statistica Neural Network by Statsoft. Created artificial neural networks makes possible the easy modelling of contact resistance of manufactured front metallization and allows the better selection of production parameters. The following technological recommendations for the screen printing connected with co-firing and selective laser sintering technology such as optimal paste composition, morphology of the silicon substrate, co-firing temperature and the power and scanning speed of the laser beam to manufacture the front electrode of silicon solar cells were experimentally selected in order to obtain uniformly melted structure well adhered to substrate, of a small front electrode substrate joint resistance value. The prediction possibility of contact resistance of manufactured front metallization is valuable for manufacturers and constructors. It allows preserving the customers’ quality requirements and bringing also measurable financial advantages.
关键词： Co-firing in the furnace,Screen printing,Computational material science,Artificial neural networks,Selective laser sintering,Silicon solar cell
更新于2025-09-16 10:30:52
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Contributions to the Contact Resistivity in Fired Tunnel-Oxide Passivating Contacts for Crystalline Silicon Solar Cells
摘要： In this article, we investigate the contact resistivity of p-type passivating contacts for silicon solar cells. Our contact structures are compatible with firing, a rapid annealing process similar to the one used for sintering of the screen-printed metallization in solar cell manufacturing. We find that the short firing process crystallizes the doped layers and incorporates active boron dopants up to the solubility concentration at the chosen firing temperature. The dependence of our contact resistivities on carrier density and temperature suggest that the hole transport is a combination of tunneling through the oxide at the wafer surface and of thermionic field emission over the Schottky barrier to the metallization. For ideal firing conditions, we find implied open-circuit voltages up to 720 mV and contact resistivities as low as 15 m·Ω·cm2.
关键词： silicon solar cell,passivating contact,Contact resistivity
更新于2025-09-16 10:30:52
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Investigation on Industrial Screen-Printed Aluminum Point Contact and Its Application in n-PERT Rear Junction Solar Cells
摘要： As compared with the traditional back surface field (BSF) solar cells, the n-type passivated emitter rear and totally diffused rear-junction (n-PERT-RJ) solar cells have much lower carrier recombination losses on their rear sides. In order to obtain more benefits (higher open-circuit voltages) from the currently passivated rear sides, the implementation of the point contact concept is an intuitive solution. In this article, we present industrial screen-printed point contacts that are metallized with aluminum (Al) pastes containing silicon additives (Si-add). To understand the impacts of the Si-add on the performance our n-PERT-RJ solar cells, the detailed loss analysis on the open-circuit voltage (VOC), short-circuit current density (JSC), and fill factor are performed separately. The effect of Si-add and pitch of laser contact openings (LCO) on the point contact characteristics are also investigated. In the last part, we introduce an innovative “point-line” contact concept on the rear side, which is composed of dot-shaped LCO and Al metal finger design, resulting in an n-PERT-RJ solar cell to reach VOC of 692 mV and peak efficiency of 22%. The 60% bifaciality of the device opens the way for an additional power output on module level, which further reduces the levelized cost of electricity. These features make the rear-side point contact design more flexible to be applied in industrial mass production.
关键词： laser contact opening (LCO),levelized cost of electricity,Aluminum (Al) paste,n-type passivated emitter rear and totally diffused (n-PERT),bifaciality,silicon solar cell,industrial,point contacts,screen printed,n-type,rear junction
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Photon Management for Silicon Solar Cells featuring Hole-Selective Molybdenum Oxide Rear Contacts: An Optical Simulation Study
摘要： Passivated, hole-selective contacts play important role in reducing surface recombination by lowering the concentration of electrons in the rear side of a solar cell. However, parasitic optical losses in these contacts can still limit the performance of the cell. In this work, the long wavelength optical losses of silicon solar cells featuring hole-selective molybdenum oxide (MoOx) rear contacts are investigated using optical simulations. The potential of these selective contacts for possible enhancement of photogenerated current density was also investigated for their use with nanostructured dielectric layers.
关键词： photon management,FDTD simulation,grating nanostructure,silicon solar cell,hole selective contact
更新于2025-09-16 10:30:52
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Simulation of a-Si:H/c-Si heterojunction solar cells: From planar junction to local junction
摘要： In order to obtain higher conversion efficiency and reduce production cost for the HIT (Heterojunction with Intrinsic Thin film) solar cell was investigated. The performance hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) based heterojunction solar cells, HACL solar cell was compared with that of the HIT and HACD (Heterojunction of Amorphous silicon and Crystalline silicon with Diffused junction) solar cells. The simulated results indicated that a-Si:H layer can bring about much absorption loss. The conversion efficiency and the short-circuit current density of the HACL cell can reach 28.18% and 43.06 mA/cm2, respectively, and are higher than that of the HIT and HACD solar cells. The main reasons for the great improvement are (1) to reduce optical absorption loss of a-Si:H and (2) to reduce photocarrier recombination for the HACL cell. The double-side local junction is very suited for the bifacial solar cells. For a HACL cell with n-type or p type c-Si base, all n-type or p-type c-Si passivating structure can decrease the consumption of rare materials since the transparent conductive oxide (TCO) can be free in this structure. It is concluded that the HACL solar cell is a promising structure for high efficiency and low cost.
关键词： a-Si:H/c-Si heterojunction,silicon solar cell,local junction,short-circuit current
更新于2025-09-12 10:27:22
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Relationship between the ideality factor and the iron concentration in silicon solar cells
摘要： The ideality factor value of silicon ??+ ? ?? solar cells with iron contaminants has been studied by means of computer simulation. The iron concentration range of 1010 ? 1013 cm?3, base doping level range of 1015 ? 1017 cm?3, and temperature range of 290 ? 340 K were used in the investigation. The Solar Cells Capacitance Simulator (SCAPS) was the tool used for numerical simulation of these devices. The two-diode model was used to extract the ideality factor. The following cases were considered: (i) Shockley–Read–Hall (SRH) recombination; (ii) both intrinsic recombination and SRH recombination; (iii) unpaired interstitial iron atoms; (iv) both iron–boron pairs and interstitial iron atoms. The algorithms of iron concentration evaluation in silicon solar cell by using current–voltage curve are proposed. The analytic expressions are suggested as well as calibration curves are calculated.
关键词： Ideality factor,Iron concentration,SCAPS simulator,Silicon solar cell
更新于2025-09-11 14:15:04