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Advances in Silicona??Nanoelectronics, Nanostructures and Higha??Efficiency Sia??Photovoltaics
摘要： This Special Issue of physica status solidi (a) covers presentations of Symposium D, 2019 Spring-EMRS Meeting in Nice, France. Silicon in various bulk forms remains a fascinating material allowing for solar cell ef?ciency records by ultimate passivation of the bulk, surfaces, and contacts. In parallel, Si nanostructures emerge as capable building blocks in diverse ?elds ranging from nano-electronics and photonics to sensing. This symposium aimed to share the latest research in these ?elds and to create new interdisciplinary ideas.
关键词： High-Ef?ciency Si-Photovoltaics,Nanostructures,Silicon-Nanoelectronics
更新于2025-09-23 15:19:57
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[IEEE 2018 XIV International Scientific-Technical Conference on Actual Problems of Electronics Instrument Engineering (APEIE) - Novosibirsk (2018.10.2-2018.10.6)] 2018 XIV International Scientific-Technical Conference on Actual Problems of Electronics Instrument Engineering (APEIE) - The Role of Chlorine Atoms in Etching Silicon in the Plasma of CF<inf>2</inf>Cl<inf>2</inf>/O<inf>2</inf>
摘要： The paper describes a model of plasma chemical etching of silicon in CCl2F2/O2 plasma with teflon coating of the reactor walls. It is established that the chlorine atoms lead to a shift in the maximum of the dependence of the etching rate of silicon on the oxygen content in the gas mixture to ~ 90%, in comparison with fluorine containing plasmas. It is shown that the proposed model of the process explains all the currently known experimental data for CCl2F2/O2 plasma. The model is applicable to other chlorine containing mixtures, at least when silicon is etched.
关键词： Plasma chemical etching,silicon,nanoelectronics,FinFET technology
更新于2025-09-19 17:15:36