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Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation
摘要： A series of electric field profile simulations in gallium nitride (GaN) p-i-n vertical diodes with negative bevel termination is carried out to optimize the bevel design. The bevel angles are varied from 90? to 0.1? with reasonably small increments to study the impact of the bevel angle on the electric field profile. The doping densities are also varied to study a more generalized trend; a new parameter defined as transition angle θt is proposed to characterize the effectivity of a beveled edge termination. Considering the potential dry etch damage on the bevel side-wall during device fabrication, the fixed surface charge from the dangling bonds and commonly used dielectric passivation are also added separately to investigate their influence. This article presents a comprehensive simulation study of GaN p-i-n diode with negative beveled edge termination, making it a useful guide for designing a simple and effective beveled edge termination, which eventually helps to enable the routine avalanche in GaN p-i-n diodes.
关键词： beveled edge termination,surface charge,simulation,gallium nitride (GaN),transition angle,silvaco,passivation,p-i-n diode,Avalanche,TCAD
更新于2025-09-23 15:21:01
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Simulation and optimization of InGaN Schottky solar cells to enhance the interface quality
摘要： The InGaN/GaN Schottky solar cell was numerically investigated under AM1.5 illuminations using Silvaco-Atlas software to reach high efficiencies. According to the simulation results, when the indium composition (xIn) exceeds 54%, the conversion efficiency drops sharply and a large valence band offset appears. This failure can be explained by the recombination of the generated carriers before their collection due to the large lattice mismatch in high indium compositions. To overcome this inability, an effective process is established to ameliorate the interface between n-InGaN and n-GaN and to enhance the Schottky solar cell performances. The obtained results predict a clear enhancement of the efficiency from 2.25% to 18.48% at xIn ? 60%. An optimization of this structure achieves an important efficiency of 21.69% for the optimal value of xIn ? 54%, metal work function Wf ? 6.3 eV, doping concentration Nd ? 2 ? 1017 cm?3 and an InGaN layer thickness TInGaN ? 0.18 μm.
关键词： Optimization,Schottky solar cells,Silvaco-Atlas software,Graded layer,Hetero-interface,n-GaN/n-InGaN,Interface amelioration
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) - Genting Highland, Pahang, Malaysia (2019.8.21-2019.8.23)] 2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) - The Effect of Illumination Intensity on the Performance of Germanium Based-Thermophotovoltaic Cell
摘要： The significance of optimizing power intensity in a thermophotovoltaic system had spurred the efforts on typically thermophotovoltaic cells which are exploiting installed near to the heat source. Germanium with 0.66 eV bandgap is recommended and extensively employed to harvest infrared radiation up to 1.8 μm. The integration of this material contributes to a cost-effective thermophotovoltaic system by capturing long wavelength under low blackbody the atmospheric perturbation between germanium the thermophotovoltaic cells affects the intensity of incoming illumination, which alters the electrical performance of the cells. Nonetheless, the investigation of this issue is remained at the infancy stage and more characterization works are required to understand the influence of illumination intensity on the cell conversion efficiency. In this work, Silvaco TCAD single Ge thermophotovoltaic cell under 2000 K blackbody radiation temperature by manipulating the illumination intensity. A conversion efficiency of 11.8 % was achieved under higher illumination intensity of 2000 K due to the increase in the maximum voltage from 0.19 V to 0.42 V when compared to AM 1.5 illumination condition. The success of this work will contribute to the incorporation of understanding the effect of incident illumination intensity on the performance of Ge cell.
关键词： light intensity,Germanium cell,TPV,Silvaco TCAD
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE International Conference on Sensors and Nanotechnology (SENSORS & NANO) - Penang, Malaysia (2019.7.24-2019.7.25)] 2019 IEEE International Conference on Sensors and Nanotechnology - Effect of Front-Surface-Field and Back-Surface-Field on the Performance of GaAs Based-Photovoltaic Cell
摘要： GaAs structures are commonly used in concentrated solar cell application, whereas the active region of the cell requires front surface field (FSF) and back surface field (BSF) to complete the band diagram and to improve the conversion efficiency up to 22 % under AM 1.5 illumination condition. However, the integration of different FSF and BSF materials such as AlGaAs, InGaP and InAlP contribute to diverse performance. A fair comparison between these materials will help to optimize the performance of GaAs devices. In this work, Silvaco TCAD software was used to simulate GaAs PV cell with different FSF and BSF materials under 1-sun and 100-sun AM 1.5 illumination condition. A conversion efficiency of 24.08 % and 27.22 % was achieved with InAlP FSF layer under 1-sun and 100-sun AM 1.5 spectrum, respectively. The results obtained from this study will contribute to a better understanding on the effect of FSF and BSF layers while obtaining the optimum FSF and BSF material for the GaAs-based photovoltaic cell.
关键词： BSF,Silvaco TCAD,Gallium Arsenide cell,FSF
更新于2025-09-16 10:30:52
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High-efficiency CIGS solar cell by optimization of doping concentration, thickness and energy band gap
摘要： In this paper, the performance of copper-indium-gallium-diselenide Cu(In,Ga)Se2 solar cell, with ZnO window layer, ZnSe bu?er layer, CIGS absorber layer and InGaP re?ector layer was studied. The study was performed using the TCAD Silvaco simulator. The e?ects of grading the band gap of CIGS absorber layer, the various thicknesses and doping concentrations of di?erent layers have been investigated. By optimizing the solar cell structure, we have obtained a maximum open circuit voltage of 0.91901 V, a short circuit current density of 39.89910 mA/cm2, a ?ll factor (FF) of 86.67040% and an e?ciency of 31.78% which is much higher than the values for similar CIGS solar cells reported so far.
关键词： e?ciency,CIGS,optimization,TCAD Silvaco,Thin ?lm solar cells
更新于2025-09-16 10:30:52
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Analytical modelling and parameters extraction of multilayered OLED
摘要： This research study investigates electrical performance of the multilayered organic light-emitting diode (OLED) with a focus on the role of charge injection, transport and emission layers. Device parameters; luminescence and current density are extracted using Silvaco ATLAS numerical device simulator and validated through the fabricated experimental results with a minor deviation of 3%. Furthermore, a mathematical model is applied to extract other device parameters such as electric field, charge carrier mobility, concentration and current density. Additionally, the multilayered device architecture is critically analysed through cut line methodology to better comprehend the internal device physics in terms of hole-electron mobility, concentration and their recombination. Subsequently, the performance parameters extracted using analytical model are compared with the results of internal analysis and a close match is observed. These results prove the Poole-Frenkel mobility-dependent behaviour in the OLEDs that varies following electric field. Analyses also highlight high electron and hole concentrations in the vicinity of the emission layer as a reason of high luminescence in the multilayered OLED, directly following the Langevin's theory of recombination in organic semiconductors. These analyses highlight the impact of different layers in the OLEDs and thus open up new horizons to further performance improvement in these devices.
关键词： Silvaco ATLAS,multilayered OLED,Poole-Frenkel mobility model,charge injection,Langevin's recombination model,transport and emission layers
更新于2025-09-12 10:27:22
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The static and dynamic analysis of GaN-based blue light-emitting diodes used in visible light communication
摘要： The static and dynamic electrical characteristics of GaN-based blue light-emitting diodes with different numbers of quantum wells were investigated by software Silvaco technology computer-aided design numerically, which were essential for visible light communication study. As a factor impacts on the response time of light-emitting diodes, the capacitance, varying with applied bias, with modulation frequency, and with the numbers of quantum wells, was analyzed detailedly. Besides that, the response time of light-emitting diodes, including the optical rise time and fall time, was also ?rstly simulated in Silvaco, and then, based on these, the pure - 3 dB bandwidth of the light-emitting diodes without building-out circuit could be calculated, so as to self-design semiconductor devices like light-emitting diodes mentioned in this study with the optimum bandwidth used for visible light communication.
关键词： Silvaco,Visible light communication,Response time,Bandwidth,GaN-based LED
更新于2025-09-11 14:15:04
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[IEEE 2019 International Conference on Power Generation Systems and Renewable Energy Technologies (PGSRET) - Istanbul, Turkey (2019.8.26-2019.8.27)] 2019 International Conference on Power Generation Systems and Renewable Energy Technologies (PGSRET) - Performance Comparison of (GaAS/GaAs) and (InGaP/GaAs) Tunnel Junction in Multi-Junction Solar Cells
摘要： This study presents a comparison of the performance of two multi-junction solar cells in terms of simulated short-circuit current density, open circuit voltage, efficiency and fill factor one of these cells with an InGaP / GaAs structure with a GaAs / GaAs junction tunnel and the other with the same structure but with an InGaP / GaAs hetrojunction tunnel. The silvaco-ticad software has been used to analyze and study these performances for both solar cells, the total thickness is specified to 0.66μm of top solar cell (GaInP), and the thickness of bottom solar cell (GaAs) is 2.64 μm and the tunnel junction with thickness 0.040 μm. He result of the simulation exposures for these multiple junction solar cells gives a conversion efficiency maximum of 24.2343% (AM1.5) would be obtained by choosing the p-In0.5Ga0.5P/n-GaAs tunnel heterojunction.
关键词： silvaco-ticad,tunnel junction,conversion efficiency,InGaP/GaAs,multi-junction solar cell
更新于2025-09-11 14:15:04
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Numerical Simulation and Optimization of An a-ITZO TFT Based on a Bi-Layer Gate Dielectrics
摘要： This work is an optimization study by numerical simulation of the performance of a bottom gate amorphous indium tin zinc oxide thin film transistor (a-ITZO TFT) using SILVACO-ATLAS software. The optimization process is focused on the gate dielectric conception, namely, thicknesses, number of layers and materials. The electrical characteristics calculated are the gate capacitance per unit area (Ci), the on-current (Ion), the on–off current (Ion=Ioff ) ratio, the threshold voltage (VT), the field-effect mobility (lFE), the sub-threshold swing (SS) and the resistivity (q) of the a-ITZO channel. The obtained results indicate that using a bi-layer dielectrics (SiO2/HfO2) with a relatively high thickness (BDT ? 70 nm) improves the electrical response compared to TFT based on the mono-layer dielectric, for the same physical thickness, and the optimized outputs obtained are Ci ? 3:45 (cid:2) 10(cid:3)7 F/cm2, Ion ? 4:12 (cid:2) 10(cid:3)5 A, lFE ? 29:34 cm2 V(cid:3)1 s(cid:3)1, Ion=Ioff ? 4:67 (cid:2) 108, VT ? (cid:3) 0:45 V, SS ? 6:42 (cid:2) 10(cid:3)2 V/dec, and q ? 2:60 (cid:2) 10(cid:3)2 X cm.
关键词： Silvaco Atlas,equivalent oxide thickness,SiO2,a-ITZO,HfO2,TFT,high-k
更新于2025-09-10 09:29:36