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SET Sensitivity of Tri-Gate Silicon Nanowire Field-Effect Transistors
摘要： The SET response of SOI tri-gate silicon nanowires is investigated using direct measurements of current transients. Resulting collected charge distributions are compared to simulations in two steps: Monte-Carlo simulations of deposited energy and TCAD simulation of collected charge, using detailed description of charge generation. Good agreement with experimental data is obtained. Current simulation tools can thus be used, with minor optimization, to simulate such integrated devices. The analysis of SETs show collected charge values lower than both the charge estimated from the LET and the charge actually generated in the nanowire, revealing a limited sensitivity of nanowire devices to high LET ions.
关键词： Nanowire,SEE,Single-Event Transient,Ultra-Thin SOI,Particle-matter interaction,Single-Event Effect,Geant4,FinFET,TCAD,Multiple-gate,Simulation,SET,Experiments
更新于2025-09-23 15:21:01
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The impact of laser energy, bias and irradiation positions on single event transients of InP HBT
摘要： The mechanism of single event transients in indium phosphide heterojunction bipolar transistors are studied with different laser energy, collector and irradiation positions based on a pulsed laser experiment. The area of the depletion region neutralized by the laser track determines the area of the funnel region, and affects the total charges collected by collector QTotal. The total charge collection consists of the charge collected in the depletion region, the charges collected in funnel region, and the diffusion charges. The larger the area of the neutralized depletion region, the larger the area of the funnel region, thus, the more electron–hole pairs would be collected. The influence of laser energy, collector bias and irradiation positions on total charge collection is studied and discussed in detail.
关键词： transient current,single event transient,charge collection mechanism,pulsed laser
更新于2025-09-16 10:30:52
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New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles
摘要： A novel approach for two-photon absorption (TPA) pulsed-laser testing produces extended charge deposition profiles that are analogous to those produced by heavy ions. In this approach, which utilizes an axicon rather than a spherical lens, the conventional Gaussian beam is replaced by a quasi-Bessel beam. The key feature of a quasi-Bessel beam, relevant to pulsed-laser single-event effects (PL-SEE) studies, is that its radial size (~1 μm) remains constant over the axial length of the beam (several 100s of μm) resulting in a charge-deposition profile that more closely mimics that produced by a heavy ion. This elongated charge distribution directly lends itself to a simple and intuitive description in terms of linear-energy transfer, or LET, facilitating laser/ion correlation studies. Experimental results comparing a conventional TPA PL-SEE focusing geometry and the axicon focusing geometry are presented for three different test vehicles: a 45-nm SOI nFET, a bulk silicon photodiode, and an LM 124 operational amplifier. Using the axicon approach, strong laser/ion correlation is observed in the silicon photodiode for single-event transients (SET) across a wide range of LETs. The correlation is achieved by “tuning” the laser to the desired LET rather than relying on pre-existing heavy-ion data and therefore this approach holds promise as a predictive tool.
关键词： single-event effect (SEE),silicon,Correlation methods,single-event transient (SET),heavy-ion testing,pulsed-laser,two-photon absorption,linear energy transfer (LET)
更新于2025-09-12 10:27:22