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- 摘要
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- 实验方案
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Towards fast and highly responsive SnSe <sub/>2</sub> based photodiode by exploiting the mobility of the counter semiconductor
摘要： In photodetection, the response time is mainly controlled by the device architecture and electron/hole mobility, while the absorption coefficient and the effective separation of the electrons/holes are the key parameters for high responsivity. Here, we report an approach towards the fast and highly responsive infra-red photodetection using n-type SnSe2 thin film on p-Si (100) substrate keeping the overall performance of the device. The I-V characteristics of the device show a rectification ratio of ~147 at ± 5 V and enhanced optoelectronic properties under 1064 nm radiation. The responsivity is 0.12 A/W at 5 V and the response/recovery time constants were estimated as ~ 57±25/34±15 μs respectively. Overall, the response times are shown to be controlled by the mobility of the constituent semiconductors of a photodiode. Further, our findings suggest that n-SnSe2 can be intergrated with well established Si technology with enhanced opto-electronic properties and also pave the way in the design of fast response photodetectors for other wavelengths as well.
关键词： Selenisation,DC sputtering,IR-Photodiode,SnSe2,Mobility
更新于2025-09-23 15:22:29
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Tin Diselenide Molecular Precursor for Solution-Processable Thermoelectric Materials
摘要： In the present work, we detail a fast and simple solution-based method to synthesize hexagonal SnSe2 nanoplates (NPLs) and textured SnSe2 nanomaterials. We also demonstrate that the same strategy can be used to produce orthorhombic SnSe nanostructures and nanomaterials. NPLs are grown through a screw dislocation-driven mechanism. This mechanism typically results in pyramidal structures, but we demonstrate here that the growth from multiple dislocations results in flower-like structures. Crystallographically textured SnSe2 bulk nanomaterials obtained from the hot pressing of these SnSe2 structures display highly anisotropic charge and heat transport properties and thermoelectric (TE) figures of merit limited by relatively low electrical conductivities. To improve this parameter, SnSe2 NPLs are blended here with metal nanoparticles. The electrical conductivities of the blends are significantly improved with respect to bare SnSe2 NPLs, what translates into a three-fold increase of the TE figure of merit, reaching unprecedented ZT values up to 0.65.
关键词： SnSe2,reactive ink,thermoelectricity,crystallographically textured nanomaterial,modulation doping
更新于2025-09-23 15:21:01
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Tin diselinide a stable co-catalyst coupled with branched TiO2 fiber and g-C3N4 quantum dots for photocatalytic hydrogen evolution
摘要： Tin diselenide (SnSe2) is an n-type semiconductor with a narrow bandgap of about 1.37eV having a CdI2 type layered structure, in which Sn sandwiched between two layers of Se planes and both atoms are covalently bonded with each other. The different morphologies of SnSe2 have been synthesized until now by various techniques and studied until now except for a few theoretical findings. Since SnSe2 has tremendous potential for photocatalytic performance due to appropriate bandgap and structure that can absorb visible light. The theoretical studies showed that SnSe2 has an ability to act as co-catalyst because it can promote charge separation by providing trapping and reduction sites for protons to produce hydrogen. The ability to generate photoinduced electrons at its own surface becomes SnSe2 a novel among other co-catalyst. However, bare SnSe2 performance is not adequate due to the limitation of fast electron recombination and low CB level so there is a need to use it with other suitable material because it will help to reduce the recombination of electron and holes and enhance the photocatalytic performance.
关键词： dichalcogenide,Electrospinning,Photocatalyst,Hydrogen,SnSe2
更新于2025-09-23 15:19:57
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SnSe2 Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity
摘要： SnSe2 field-effect transistor was fabricated based on exfoliated few-layered SnSe2 flake, and its electrical and photoelectric properties have been investigated in detail. With the help of a drop of de-ionized (DI) water, the SnSe2 FET can achieve an on/off ratio as high as ~ 104 within 1 V bias, which is ever extremely difficult for SnSe2 due to its ultrahigh carrier density (1018/cm3). Moreover, the subthreshold swing and mobility are both improved to ～ 62 mV/decade and ~ 127 cm2 V?1 s?1 at 300 K, which results from the efficient screening by the liquid dielectric gate. Interestingly, the SnSe2 FET exhibits a gate bias-dependent photoconductivity, in which a competition between the carrier concentration and the mobility under illumination plays a key role in determining the polarity of photoconductivity.
关键词： Photoconductivity,SnSe2,Field-effect transistor,On/off ratio
更新于2025-09-19 17:15:36
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Controlled synthesis of SnSxSe2?x nanoplate alloys via synergetic control of reactant activity and surface defect passivation control with surfactant and co-surfactant mixture
摘要： Two-dimensional (2D) metal dichalcogenide nanomaterials have been receiving enormous research interest for electronic, optoelectronic, and catalytic applications. However, the facile tunability of alloying and doping, as well as the successful formation of ideal defect-free nanoplate morphology have been hardly achieved for 2D nanomaterials. Herein, we successfully synthesized a series of 2D solid-solution SnSxSe2(cid:1)x particles of 0.20–2.00 μm width and 30–68 nm thickness with morphological defect-free nanoplate via a solvothermal reaction. With controlled reactivities of elemental chalcogen precursors, a co-surfactant hexylamine together with a structure-directing agent polyvinylpyrrolidone was found to be essential for realizing ideal defect-free nanoplate morphology of SnSxSe2(cid:1)x particles without either cabbage-like or twinned structure. The successful synthesis of morphologically defect-free SnSxSe2(cid:1)x nanoplates with rationally controlled energy band gaps ranging from 1.36 eV for SnSe2 to 1.96 eV for SnS2 could provide promising materials for electronics, optoelectronics, and electrocatalytic applications.
关键词： 2D nanomaterials,Nanoplate,SnSe2,SnS2,Band gap,SnSxSe2(cid:1)x
更新于2025-09-19 17:13:59
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SnSe2 Quantum Dots: Facile Fabrication and Application in Highly Responsive UV-Detectors
摘要： Synthesizing quantum dots (QDs) using simple methods and utilizing them in optoelectronic devices are active areas of research. In this paper, we fabricated SnSe2 QDs via sonication and a laser ablation process. Deionized water was used as a solvent, and there were no organic chemicals introduced in the process. It was a facile and environmentally-friendly method. We demonstrated an ultraviolet (UV)-detector based on monolayer graphene and SnSe2 QDs. The photoresponsivity of the detector was up to 7.5 × 106 mAW?1, and the photoresponse time was ~0.31 s. The n–n heterostructures between monolayer graphene and SnSe2 QDs improved the light absorption and the transportation of photocarriers, which could greatly increase the photoresponsivity of the device.
关键词： UV-detector,phototransistor,SnSe2 quantum dots,graphene
更新于2025-09-12 10:27:22
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First-principles investigation on the interlayer doping of SnSe2 bilayer
摘要： Using density functional theory calculations, we systematically investigated the effects of numbers and types of transition metals (TM) on the magnetic property of SnSe2 bilayer nanosheet. Our results revealed that, when one TM is introduced into the interlayer, the magnetic moment induced by the Co and Ni is tiny while it is largely strengthened with the doping of V, Cr, Mn, and Fe. When two TMs are inserted into the interlayer, Vand Cr make the system change into a weak antiferromagnetism (AFM) state while Mn-, Fe-, Co-doped systems display a weak ferromagnetism (FM) ground state. These FM states have the magnetic moments which double those of the one TM–doping systems. With the TM numbers further increasing to four, the robust AFM and FM features appear with the doping of Fe and Mn, respectively. Ni cannot induce any magnetism whatever the numbers of Ni are filling in. Interestingly, with the increase of the numbers of dopants, transitions from FM to AFM and AFM to FM are predicted to be realized on Fe-SnSe2 and Cr-SnSe2 systems, respectively. This kind of transition may be important for the applications in spintronic devices.
关键词： Interlayer doping,Spintronics application,Density functional theory,Antiferromagnetism,Modeling and simulation,Ferromagnetism,SnSe2
更新于2025-09-10 09:29:36
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) van der Waals Heterojunctions
摘要： Van der Waals heterojunctions (vdWHs) have gained extensive attention because they can integrate the excellent characteristics of the stacked materials and most vdWHs exhibit type-II band alignment. However, type-III vdWHs with broken gaps are still very rare, which limits the development and application of two-dimensional (2D) materials in the fields of tunnel FETs (TFETs). Here, we theoretically demonstrate that 2D phosphorene/SnS2 (SnSe2) vdWHs possess type-III (broken-gap) band alignment, and their I-V curves present negative differential resistance (NDR) effects. The BTBT transport mechanism and its applications in TFETs are analyzed. Interestingly, a positive electric field can enlarge the tunnelling window and a negative electric field can realize multiple-band-alignment transformation (type I, type II, and type III). Thus, this work presents the intrinsic physics mechanism and electric field tunable multiple-band alignments in 2D type-III vdWHs and related electronic devices.
关键词： tunnel FETs,SnS2,phosphorene,type-III band alignment,Van der Waals heterojunctions,electric field,SnSe2
更新于2025-09-09 09:28:46
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/epitaxial graphene van der Waals heterostructure
摘要： We report on direct observation of interface superconductivity in single-unit-cell SnSe2 films grown on graphitized SiC(0001) substrate. The tunneling spectrum in the superconducting state reveals a rather conventional character with a fully gapped order parameter. The occurrence of superconductivity is further confirmed by the observation of vortices under external magnetic field. Through interface engineering, we unravel the mechanism of superconductivity that originates from a two-dimensional electron gas formed at the interface of SnSe2 and graphene. Our finding opens up novel strategies to hunt for and understand interface superconductivity based on van der Waals heterostructures.
关键词： two-dimensional electron gas,interface superconductivity,van der Waals heterostructure,SnSe2,graphene
更新于2025-09-04 15:30:14