[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Emerging Memory Modeling Challenges (Invited Paper)

摘要： Emerging Memory (EM) is a broad class of memory devices leveraging a wide spectrum of physical phenomena and/or material properties, that go beyond the charge storage concept of more conventional NAND and DRAM technologies. Availability of physical models and simulation tools to understand their behavior, predict performance, engineer materials and cell architecture would be extremely useful for their successful development. However, such tools are not always available because of the diversity and complexity of the physical mechanisms. This paper would like to review the main trends of the on-going modeling and simulation activities in the field of EM, trying to point out what are the needs and challenges for the future.